UNISONIC TECHNOLOGIES CO., LTD 18N50 Power MOSFET 18A, 500V N-CHANNEL POWER MOSFET 1 1 DESCRIPTION The UTC 18N50 is an N-channel enhancement mode power MOSFET using UTC’s advanced planar stripe and DMOS technology to provide perfect performance. This technology can withstand high energy pulse in the avalanche and commutation mode. It can provide minimum on-state resistance and high switching speed. This device is generally applied in active power factor correction and high efficient switched mode power supplies. FEATURES 1 SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 18N50L-TA3-T 18N50G-TA3-T 18N50L-TF3-T 18N50G-TF3-T 18N50L-TF1-T 18N50G-TF1-T 18N50L-TF2-T 18N50G-TF2-T 18N50L-TC3-T 18N50G-TC3-T 18N50L-T3P-T 18N50G-T3P-T 18N50L-TQ2-T 18N50G-TQ2-T 18N50L-TQ2-R 18N50G-TQ2-R Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 TO-220F1 TO-220F 1 1 TO-3P TO-220F2 * RDS(ON) < 0.32Ω @ VGS=10V, ID=9A * High switching speed * 100% avalanche tested * Improved dv/dt capability TO-220 TO-230 1 TO-263 Package TO-220 TO-220F TO-220F1 TO-220F2 TO-230 TO-3P TO-263 TO-263 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tube Tube Tube Tape Reel 1 of 7 QW-R502-477.L 18N50 Power MOSFET MARKING UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R502-477.L 18N50 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage VDSS 500 V Gate to Source Voltage VGSS ±30 V 18 A Continuous ID Drain Current Pulsed (Note 2) IDM 72 (Note 5) A 945 mJ Single Pulsed (Note 3) EAS Avalanche Energy Repetitive (Note 2) EAR 23.5 mJ Avalanche Current (Note 2) IAR 18 A Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220F/TO-220F1 38.5 TO-220F2 40.5 Power Dissipation PD W TO-220/TO-263 235 TO-230 TO-3P 277 Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. L=5.2mH, IAS=18A, VDD=50V, RG=25Ω, Starting TJ=25°C 4. ISD ≤18A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C 5. Drain current limited by maximum junction temperature THERMAL DATA PARAMETER Junction to Ambient TO-220F/TO-220F1 TO-220F2 Junction to Case TO-220/TO-263 TO-230 TO-3P SYMBOL θJA θJc UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw RATINGS 62.5 3.3 3.0 0.53 UNIT °C/W °C/W 0.45 3 of 7 QW-R502-477.L 18N50 Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250µA Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ ID=250μA,Referenced to 25°C VDS=500V, VGS=0V Drain-Source Leakage Current IDSS VDS=400V, TC=125°C Forward VGS = 30 V, VDS = 0 V Gate-Source Leakage Current IGSS Reverse VGS = -30 V, VDS = 0 V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=9A Forward Transconductance gFS VDS=40V, ID=9A (Note 1) DYNAMIC PARAMETERS Input Capacitance CISS Output Capacitance COSS VDS=25V,VGS=0V,f=1.0MHz Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VDS=50V, VGS=10V, ID=1.3A Gate-Source Charge QGS (Note 1,2) Gate-Drain Charge QGD Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VDD=30V, ID=0.5A, RG=25Ω (Note 1,2) Turn-OFF Delay Time tD(OFF) Turn-OFF Fall Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS =18A, VGS=0V Notes: 1. Pulse Test : Pulse width≤300μs, Duty cycle≤2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 500 0.5 1 10 100 -100 2.0 V V/°C µA µA nA 4.0 0.32 V Ω S 1200 2860 270 430 35 40 pF pF pF 70 15 19 110 165 520 180 130 340 620 290 nC nC nC ns ns ns ns 18 72 1.4 A A V 25 85 4 of 7 QW-R502-477.L 18N50 Power MOSFET TEST CIRCUITS AND WAVEFORMS + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period Peak Diode Recovery dv/dt Test Circuit & Waveforms VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R502-477.L 18N50 Power MOSFET TEST CIRCUITS AND WAVEFORMS(Cont.) Gate Charge Test Circuit Gate Charge Waveforms Resistive Switching Test Circuit Resistive Switching Waveforms 2 EAS= 1 2 LIAS VDS RG BVDSS BVDSS-VDD BVDSS ID L IAS 10V ID(t) DUT tP VDD VDD VDS(t) tP Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 6 of 7 QW-R502-477.L 18N50 Power MOSFET TYPICAL CHARACTERISTICS Drain Current, ID (A) Drain Current, ID (A) Drain Current, ID (µA) Drain Current, ID (µA) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R502-477.L