UTC-IC 2N80Z

UNISONIC TECHNOLOGIES CO., LTD
2N80Z
Power MOSFET
2A, 800V N-CHANNEL
POWER MOSFET
„
DESCRIPTION
The UTC 2N80Z is an N-channel mode power MOSFET using
UTC’s advanced technology to provide costumers planar stripe and
DMOS technology. This technology is specialized in allowing a
minimum on-state resistance and superior switching performance. It
also can withstand high energy pulse in the avalanche and
commutation mode.
The UTC 2N80Z is universally applied in high efficiency switch
mode power supply.
„
FEATURES
* RDS(on) = 6.3Ω @VGS = 10 V
* High switching speed
„
SYMBOL
„
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
2N80ZL-TF3-T
2N80ZG-TF3-T
Note: Pin Assignment: G: Gate D: Drain
S: Source
www.unisonic.com.tw
Copyright © 2012 Unisonic Technologies Co., Ltd
Package
TO-220F
Pin Assignment
1
2
3
G
D
S
Packing
Tube
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QW-R502-828.A
2N80Z
„
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
800
V
Gate-Source Voltage
VGSS
±20
V
Avalanche Current (Note 1)
IAR
2.4
A
Continuous
ID
2.4
A
Drain Current
Pulsed (Note 1)
IDM
9.6
A
Single Pulsed (Note 2)
EAS
180
mJ
Avalanche Energy
Repetitive (Note 1)
EAR
8.5
mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.0
V/ns
Power Dissipation
PD
24
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 59mH, IAS = 2.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 2.4A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
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THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
„
SYMBOL
θJA
θJC
RATINGS
62.5
5.2
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain-Source Leakage Current
Gate- Source Leakage Current
Forward
Reverse
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
Forward Transconductance (Note 1)
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SYMBOL
BVDSS
ID=250µA, VGS=0V
△BVDSS/△TJ Reference to 25°C, ID=250µA
VDS=800V, VGS=0V
IDSS
VDS=640V, TC=125°C
VGS=+20V, VDS=0V
IGSS
VGS=-20V, VDS=0V
VGS(TH)
RDS(ON)
gFS
CISS
COSS
CRSS
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
TEST CONDITIONS
VDS=VGS, ID=250µA
VGS=10V, ID=1.2A
VDS=50V, ID=1.2A
VGS=0V, VDS=25V, f=1.0MHz
MIN TYP MAX UNIT
800
V
V/°C
0.9
10
100
5
-5
3.0
4.8
2.65
425
45
5.5
µA
µA
µA
5.0
6.3
V
Ω
S
550
60
7.0
pF
pF
pF
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QW-R502-828.A
2N80Z
„
Power MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
SWITCHING PARAMETERS
Total Gate Charge
QG
VGS=10V, VDS=640V,
Gate to Source Charge
QGS
ID=2.4A (Note 1,2)
Gate to Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Rise Time
tR
VDD=400V, ID=2.4A,
RG=25Ω (Note 1,2)
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source Diode
IS
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
Drain-Source Diode Forward Voltage
VSD
IS=2.4A, VGS=0V
Reverse Recovery Time (Note 1)
tRR
IS=2.4A, VGS=0V,
dIF/dt=100A/µs
Reverse Recovery Charge (Note 1)
QRR
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
12
2.6
6.0
12
30
25
28
480
2.0
15
35
70
60
65
nC
nC
nC
ns
ns
ns
ns
2.4
A
9.6
A
1.4
V
ns
µC
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QW-R502-828.A
2N80Z
„
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
Peak Diode Recovery dv/dt Test Circuit & Waveforms
VGS
(Driver
)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 6
QW-R502-828.A
2N80Z
Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
„
VGS
Same Type
as DUT
12V
QG
10V
200nF
50kΩ
VDS
300nF
QGS
QGD
VGS
DUT
3mA
Charge
Gate Charge Test Circuit
Gate Charge Waveforms
Resistive Switching Test Circuit
Resistive Switching Waveforms
2
EAS= 1
2 LIAS
VDS
RG
BVDSS
BVDSS-VDD
BVDSS
ID
L
IAS
10V
ID(t)
DUT
tP
VDD
VDD
VDS(t)
tP
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Time
Unclamped Inductive Switching Waveforms
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QW-R502-828.A
2N80Z
Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current, ID (A)
Drain Current, ID (µA)
Drain Current, ID (µA)
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UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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