UNISONIC TECHNOLOGIES CO., LTD 2SC3669 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES * Low saturation voltage VCE(SAT)=0.5V (Max.) * High speed switching time: TSTG=1.0μs (Typ.) ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free SOT-223 2SC3669G-x-AA3-R SOT-89 2SC3669G-x-AB3-R 2SC3669L-x-TM3-T 2SC3669G-x-TM3-T TO-251 2SC3669L-x-TN3-R 2SC3669G-x-TN3-R TO-252 Note: Pin Assignment: B: Base C: Collector E: Emitter Pin Assignment 1 2 3 B C E B C E B C E B C E Packing Tape Reel Tape Reel Tube Tape Reel MARKING SOT-223 SOT-89 www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd TO-251 / TO-252 1 of 4 QW-R209-015.D 2SC3669 NPN EPITAXIAL SILICON TRANSISTOR PIN ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage VEBO 5 V Collector Current IC 2 A Base Current IB 1 A SOT-223/SOT-89 0.5 W Collector Power Dissipation PC TO-251/TO-252 1 W Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. The device is guaranteed to meet performance specification within 0°C~70°C operating temperature range and assured by design from –20°C~85°C. ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER Collector Emitter Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector-Emitter Saturation Voltage Base- Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Switching Time TEST CONDITIONS IC= 10mA, IB= 0 VCB=80V, IE= 0 VEB= 5V, IC=0 VCE=2V, IC=0.5A VCE=2V, IC=1.5A IC=1A, IB=0.05A IC=1A, IB=0.05A VCE=2V, IC=0.5A VCB= 10V, IE= 0, f=1MHz MIN 80 70 40 TYP MAX UNIT V 1.0 μA 1.0 μA 240 0.15 0.9 100 30 0.5 1.2 V V MHz pF Turn-on Time tON 0.2 μs Storage Time TSTG 1.0 μs 0.2 μs Fall Time SYMBOL V(BR)CEO ICBO IEBO hFE1 hFE2 VCE(SAT) VBE(SAT) fT Cob tf IB1= -IB2=0.05A DUTY CYCLE ≤ 1% CLASSIFICATION OF hFE1 RANK RANGE O 70~140 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Y 120~240 2 of 4 QW-R209-015.D 2SC3669 NPN EPITAXIAL SILICON TRANSISTOR TYPICAL CHARACTERISTICS UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R209-015.D 2SC3669 NPN EPITAXIAL SILICON TRANSISTOR TYPICAL CHARACTERISTICS (Cont.) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R209-015.D