MJD41C NPN PLASTIC ENCAPSULATE TRANSISTORS P b Lead(Pb)-Free 1.BASE 2.COLLECTOR 3.EMITTER Features: * Designed for general purpose amplifier and low speed switching applications. * Monolithic Construction With Built–in Base–Emitter Resistors. 1 2 3 D-PAK(TO-252) ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Rating Symbol Value Unit Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage VEBO 5.0 V Collector Current IC 6.0 A Collector Power Dissipation PD 1.25 W Junction Temperature Tj +150 ˚C Tstg -65 to +150 ˚C Storage Temperature Range WEITRON http://www.weitron.com.tw 1/5 19-Nov-09 MJD41C ELECTRICAL CHARACTERISTICS(TA=25˚C unless otherwise noted) Parameter Symbol Min Typ Max Unit BVCBO 100 - - V BVCEO 100 - - V BVEBO 5.0 - - V ICEO - - 50 µA IEBO - - 0.5 mA hFE(1) hFE(2) 30 15 - 75 - VCE(sat) - - 1.5 V Base-Emitter Voltage VCE=4V, IC=6A VBE - - 2 V Transition frequency VCE=10V, IC =0.5A, f=1MHz fT 3 - - MHz Collector-Base Breakdown Voltage IC=0.1mA Collector-Emitter Breakdown Voltage IC=30mA Emitter-Base Breakdown Voltage IE=0.1mA VCB=60V VEB =5.0V ON CHARACTERISTICS DC Current Gain VCE=4V, IC=0.3A VCE=4V, IC=3A Collector-Emitter Saturation Voltage IC =6A, IB =0.6A WEITRON http://www.weitron.com.tw 2/5 19-Nov-09 MJD41C WEITRON http://www.weitron.com.tw 3/5 19-Nov-09 MJD41C Typical Characteristics WEITRON http://www.weitron.com.tw 4/5 19-Nov-09 MJD41C TO-252 Outline Dimensions unit:mm TO-252 E A G 4 H Dim A B C D E G H J K L M J 1 2 3 B M K D C WEITRON http://www.weitron.com.tw L 5/5 Min 6.40 9.00 0.50 2.20 0.45 1.00 5.40 0.30 0.70 0.90 Max 6.80 10.00 0.80 2.30 2.50 0.55 1.60 5.80 0.64 1.70 1.50 19-Nov-09