V23990-P381-A-PM final datasheet V23990-P381-A-01-14 fastPIM 1H, 600V, 12A Maximum Ratings / Höchstzulässige Werte Parameter Condition Input Rectifier Bridge Gleichrichter Repetitive peak reverse voltage Periodische Rückw. Spitzensperrspannung Forward current per diode Dauergrenzstrom Surge forward current Stoßstrom Grenzwert 2 I t-value DC current Grenzlastintegral Power dissipation per Diode Verlustleistung pro Diode Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung DC collector current Kollektor-Dauergleichstrom Repetitive peak collector current Periodischer Kollektorspitzenstrom Power dissipation per IGBT Verlustleistung pro IGBT Gate-emitter peak voltage Gate-Emitter-Spitzenspannung SC withstand time Kurzschlußverhalten Diode Inverter Diode Wechselrichter DC forward current Dauergleichstrom Repetitive peak forward current Periodischer Spitzenstrom Power dissipation per Diode Verlustleistung pro Diode Symbol VRRM 1600 V Th=80°C; IFAV 35 A tp=10ms Tj=25°C IFSM 200 A tp=10ms Tj=25°C I2t 200 As Tj=150°C Th=80°C Ptot 44 W VCE 600 V 2 Tj=150°C Th=80°C, IC 22 A tp=1ms Th=80°C Icpuls 44 A Tj=150°C Th=80°C Ptot 42 W VGE ±20 V Tj=125°C Vce=390V VGE=15V tSC 3 us Tj=150°C Th=80°C, IF 15,5 A tp=1ms Th=80°C IFRM 31 A Tj=150°C Th=80°C Ptot 24 W Tjmax 150 °C Tstg -40…+125 °C Top -40…+125 °C Vis 4000 Vdc min 12,7 mm min 12,7 mm Thermal properties Thermische Eigenschaften max. Chip temperature max. Chiptemperatur Storage temperature Lagertemperatur Operation temperature Betriebstemperatur Insulation properties Modulisolation Insulation voltage Isolationsspannung Creepage distance Kriechstrecke Clearance Luftstrecke Copyright by Vincotech Datasheet values Unit max. t=1min 1 Revision: 1 V23990-P381-A-PM final datasheet V23990-P381-A-01-14 fastPIM 1H, 600V, 12A Characteristic values Description Symbol Conditions T(C°) Input Rectifier Bridge Gleichrichter Forward voltage Durchlaßpannung Threshold voltage (for power loss calc. only) Schleusenspannung Slope resistance (for power loss calc. only) Ersatzwiderstand Reverse current Sperrstrom Thermal resistance chip to heatsink per chip VF Vto rt Ir Thermal resistance chip to heatsink per chip RthJH Wärmewiderstand Chip-Kühlkörper pro Chip Copyright by Vincotech VGE(th) Tj=25°C Tj=125°C VCE(sat) Tj=25°C Tj=125°C ICES Tj=25°C Tj=125°C IGES Tj=25°C Tj=125°C td(on) Tj=25°C Tj=125°C tr Tj=25°C Tj=125°C td(off) Tj=25°C Tj=125°C tf Tj=25°C Tj=125°C Eon Tj=25°C Tj=125°C Eoff Tj=25°C Tj=125°C Cies Tj=25°C Tj=125°C Coss Tj=25°C Tj=125°C Crss Tj=25°C Tj=125°C QGate Tj=25°C Tj=125°C RthJH Other conditions (Rgon-Rgoff) Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=150°C Wärmewiderstand Chip-Kühlkörper pro Chip Transistor Inverter, inductive load Transistor Wechselrichter Gate emitter threshold voltage Gate-Schwellenspannung Collector-emitter saturation voltage Kollektor-Emitter Sättigungsspannung Collector-emitter cut-off Kollektor-Emitter Reststrom Gate-emitter leakage current Gate-Emitter Reststrom Turn-on delay time Einschaltverzögerungszeit Rise time Anstiegszeit Turn-off delay time Abschaltverzögerungszeit Fall time Fallzeit Turn-on energy loss per pulse Einschaltverlustenergie pro Puls Turn-off energy loss per pulse Abschaltverlustenergie pro Puls Input capacitance Eingangskapazität Output capacitance Ausgangskapazität Reverse transfer capacitance Rückwirkungskapazität Gate charge Gate Ladung Datasheet values VR(V) IC(A) VGE(V) VCE(V) IF(A) VGS(V) VDS(V) Id(A) Min 30 30 30 Typ Max 1,21 1,19 0,92 0,81 0,01 0,013 1,35 1200 2 Thermal grease thikness50um Warmeleitpaste Dicke50um = 0,61 W/mK VCE=VGE 15 Rgon=12 Ohm Rgoff=2 Ohm Rgon=12 Ohm Rgoff=2 Ohm Rgon=12 Ohm Rgoff=2 Ohm Rgon=12 Ohm Rgoff=2 Ohm Rgon=12 Ohm Rgoff=2 Ohm Rgon=12 Ohm Rgoff=2 Ohm f=1MHz 0 600 25 0 15 300 Unit V V 0,85 Ohm 0,01 3 mA 1,6 K/W 0,00025 5,6 V 12 2,5 1,8 2,75 V 0,25 2 300 mA nA 12 ns 17 15 300 12 ns 8 15 300 12 ns 80 15 300 12 ns 29 15 300 12 mWs 0,155 15 300 12 mWs 0 25 0,133 1,2 f=1MHz 0 25 0,15 nF f=1MHz 0 25 0,05 nF 15 300 Thermal grease thickness50um Warmeleitpaste Dicke50um = 0,61 W/mK 2 12 78 1,69 96 nF nC K/W Revision: 1 V23990-P381-A-PM final datasheet V23990-P381-A-01-14 fastPIM 1H, 600V, 12A Characteristic values Description Symbol Conditions T(C°) Diode Inverter Diode Wechselrichter Diode forward voltage Durchlaßspannung Peak reverse recovery current Rückstromspitze Reverse recovery time Sperreverzögerungszeit Reverse recovered charge Sperrverzögerungsladung Reverse recovered energy Sperrverzögerungsenergie Thermal resistance chip to heatsink per chip VF IRM trr Qrr Erec Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Copyright by Vincotech Other conditions (Rgon-Rgoff) 12 Rgon=12Ohm 15 300 Typ Max 1,92 1,48 2,3 Rgon=12Ohm V $ 12 15 300 12 ns 50 Rgon=12Ohm 15 300 12 uC 0,55 Rgon=12Ohm 15 300 12 mWs 0,089 Tj=25°C DR/R Tc=100°C R100=809Ohm Tol. ±5% 2,95 9,5 10 K/W 10,5 2,8 Tj=25°C B(25/100) Tj=25°C Unit 22,7 R25 P Min Thermal grease thickness50um Warmeleitpaste Dicke50um = 0,61 W/mK RthJH Wärmewiderstand Chip-Kühlkörper pro Chip NTC-Thermistor NTC-Widerstand Rated resistance Nennwiderstand Deviation of R100 Abweichung von R100 Power dissipation given Epcos-Typ Verlustleistung Epcos-Typ angeben B-value B-Wert Datasheet values VR(V) IC(A) VGE(V) VCE(V) IF(A) VGS(V) VDS(V) Id(A) %/K 210 Tol. ±3% 3 kOhm mW 3730 Revision: 1 K V23990-P381-A-PM final datasheet V23990-P381-A-01-19 fastPIM 1H, 600V, 12A Output inverter Figure 1. Typical output characteristics Figure 2. Typical output characteristics Output inverter IGBT Output inverter IGBT Ic= f(VCE) Ic= f(VCE) 25 IC (A) IC (A) 25 20 20 15 15 10 10 5 5 0 0 0 1 2 3 4 VCE (V) 5 0 1 2 3 VCE (V) 4 parameter: tp = 250 Ps Tj = 25 °C VGE parameter: from: 6 V to 16 V in 1 V steps parameter: tp = 250 Ps Tj = 125 °C VGE parameter: from: 6 V to 16 V in 1 V steps Figure 3. Typical transfer characteristics Figure 4. 5 Output inverter IGBT Typical diode forward current as a function of forward voltage Ic= f(VGE) Output inverter FRED IF=f(VF) IC (A) IF (A) 25 20 25 20 15 15 125 oC 125 oC 25 oC 10 10 5 25 oC 5 0 0 0 2 4 6 parameter: tp = 250 Ps Copyright by Vincotech 8 VCE = V GE (V) 10 0 0,5 1 1,5 2 2,5 VF (V) 3 parameter: tp = 250 Ps 4V 4 Revision: 1 V23990-P381-A-PM final datasheet V23990-P381-A-01-19 fastPIM 1H, 600V, 12A Output inverter Figure 5. Typical switching energy losses Figure 6. as a function of collector current Output inverter IGBT Typical switching energy losses as a function of gate resistor Output inverter IGBT E = f (Ic) E = f (RG) 0,4 E (mWs) E (mWs) 0,4 0,35 0,35 0,3 0,3 0,25 0,25 Eon 0,2 0,2 Eon 0,15 0,15 Eoff Eoff 0,1 Erec 0,1 Erec 0,05 0,05 0 0 0 5 10 15 20 25 IC 30 (A) 0 inductive load, Tj = 125 °C VCE = 300 V 15 V VGE= 12 : RGon = 6*RGoff = 20 40 60 80 100 RG (:) inductive load, Tj = 125 °C VCE = 300 V VGE= 15 V Ic = 12 A Figure 7. Typical switching times as a Figure 8. function of collector current Output inverter IGBT Typical switching times as a function of gate resistor Output inverter IGBT t = f (Ic) t = f (RG) 1 t ( Ps) t ( Ps) 1 tdoff tdoff 0,1 0,1 tdon tdon tf tf 0,01 0,01 tr tr 0,001 0,001 0 5 10 15 20 25 0 IC (A) 30 inductive load, Tj = 125 °C VCE = 300 V VGE= 15 V 12 : RGon =6* RGoff = Copyright by Vincotech 20 40 60 80R G ( : ) 100 inductive load, Tj = 125 °C VCE = 300 V VGE= 15 V Ic = 12 A 5 Revision: 1 V23990-P381-A-PM final datasheet V23990-P381-A-01-19 fastPIM 1H, 600V, 12A Output inverter Figure 9. Typical reverse recovery time Figure 10. Typical reverse recovery current as a function of gate resistor Output inverter FRED diode as a function of gate resistor Output inverter FRED diode trr = f (Rgon) IRRM = f (Rgon) 0,07 IrrM (A) t rr( Ps) 30 In 0,06 25 0,05 20 0,04 15 0,03 10 In 0,02 5 0,01 0 0 0 20 Tj = VR = In= 40 60 80 100 Rgon( :) 120 0 20 125 °C 300 V 12 A 40 Tj = VR = In= Figure 11. Typical reverse recovery charge 80 100Rgon( :) 120 125 °C 300 V 12 A Figure 12. Typical diode peak rate of fall of as a function of gate resistor Output inverter FRED diode forward and reverse recovery current as a function of gate resistor Output inverter FRED diode di0/dt,dIrec/dt= f (Rgon) Qrr = f (Rgon) di/ dt (A/ Ps) 0,8 Qrr ( PC) 60 0,7 3100 2600 0,6 2100 0,5 1600 0,4 In 0,3 1100 0,2 600 dI0/dt dIrec/dt 0,1 100 0 0 20 Tj = VR = In= 40 60 80 100 ( :) Rgon 0 120 125 °C 300 V 12 A Copyright by Vincotech 20 40 Tj = VR = IF= 6 60 80 100Rgon ( :) 120 125 °C 300 V 12 A Revision: 1 V23990-P381-A-PM final datasheet V23990-P381-A-01-19 fastPIM 1H, 600V, 12A Output inverter Figure 13. IGBT transient thermal impedance Figure 14. FRED transient thermal impedance as a function of pulse width as a function of pulse width ZthJH = f(tp) ZthJH = f(tp) 101 ZthJH (K/W) ZthJH (K/W) 101 100 100 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 10-1 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 10-1 10-2 10-2 10-5 10-4 10-3 10-2 Parameter: D = tp / T 10-1 100 t p (s) 101 10-5 RthJH 1,69 K/W 10-4 10-3 10-2 Parameter: D = tp / T FRED thermal model values R (C/W) 0,08 0,15 0,55 0,50 R (C/W) Copyright by Vincotech 0,06 0,25 0,69 0,75 0,73 7 100 t p (s) 101 RthJH 2,95 K/W IGBT thermal model values Tau (s) 1,3E+02 2,1E+00 2,6E-01 5,7E-02 10-1 Tau (s) 5,0E+01 1,3E+00 1,9E-01 3,7E-02 7,3E-03 Revision: 1 V23990-P381-A-PM final datasheet V23990-P381-A-01-19 fastPIM 1H, 600V, 12A Output inverter Figure 15. Power dissipation as a Figure 16. Collector current as a function of heatsink temperature Output inverter IGBT function of heatsink temperature Output inverter IGBT Ptot = f (Th) Ic = f (Th) 35 IC (A) Ptot (W) 100 90 30 80 25 70 60 20 50 15 40 30 10 20 5 10 0 0 0 50 100 150 Th ( o C) 0 200 40 60 80 100 120 parameter: Tj = 150°C parameter: Tj = 150°C VGE= 0V Figure 17. Power dissipation as a Figure 18. Forward current as a Th 140 ( o C) function of heatsink temperature Output inverter FRED function of heatsink temperature Output inverter FRED Ptot = f (Th) IF = f (Th) 80 160 35 IF (A) Ptot (W) 20 70 30 60 25 50 20 40 15 30 10 20 5 10 0 0 0 20 40 60 80 100 120 140 160 Th ( o C) 0 parameter: Tj = 150°C Copyright by Vincotech 50 100 150 200 Th ( o C) parameter: Tj = 150°C 8 Revision: 1 V23990-P381-A-PM final datasheet V23990-P381-A-01-19 fastPIM 1H, 600V, 12A Input rectifier bridge Figure 19. Typical diode forward current as a function of forward voltage as a function of pulse width IF=f(VF) Rectifier diode ZthJH = f(tp) 101 60 ZthJC (K/W) IF (A) Figure 20. Diode transient thermal impedance 50 100 40 30 125°C D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 25°C 20 10-1 10 0 0 0,5 1 1,5 VF (V) 2 10-2 10-5 10-4 10-3 10-2 10-1 parameter: tp = 250 Ps Parameter: D = tp / T Figure 21. Power dissipation as a Figure 22. Forward current as a 100 t p (s) RthJH 1,60 K/W function of heatsink temperature Rectifier diode function of heatsink temperature Rectifier diode Ptot = f (Th) IF = f (Th) 140 101 IF (A) Ptot (W) 45 40 120 35 100 30 80 25 20 60 15 40 10 20 5 0 0 0 50 100 150 Th ( o C) 200 0 parameter: Tj = 150°C Copyright by Vincotech 20 40 60 80 100 o ( C) 120 Th 140 160 parameter: Tj = 150°C 9 Revision: 1 V23990-P381-A-PM final datasheet V23990-P381-A-01-19 fastPIM 1H, 600V, 12A Thermistor Figure 23. Typical NTC characteristic as a function of temperature NTC RT/R25 RT / R25 = f (T) NTC-typical temperature characteristic 1,0 0,9 0,8 0,7 0,6 0,5 0,4 0,3 0,2 0,1 0,0 25 45 65 Copyright by Vincotech 85 105 T (°C) 125 10 Revision: 1