CEP07N65A/CEB07N65A CEF07N65A

CEP07N65A/CEB07N65A
CEF07N65A
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type
VDSS
RDS(ON)
ID
@VGS
CEP07N65A
650V
1.45Ω
7A
10V
CEB07N65A
650V
1.45Ω
7A
10V
CEF07N65A
650V
1.45Ω
7A d
10V
D
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
G
D
G
D
S
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
CEP SERIES
TO-220
ABSOLUTE MAXIMUM RATINGS
Parameter
S
CEF SERIES
TO-220F
S
Tc = 25 C unless otherwise noted
Limit
Symbol
TO-220/263
TO-220F
Units
Drain-Source Voltage
VDS
650
V
Gate-Source Voltage
VGS
±30
V
Drain Current-Continuous @ TC = 25 C
ID
@ TC = 100 C
Drain Current-Pulsed a
IDM e
Maximum Power Dissipation @ TC = 25 C
PD
- Derate above 25 C
Single Pulsed Avalanche Energy h
Single Pulsed Avalanche Current
7
7
A
5
5d
A
28
28 d
A
150
48
W
0.5
W/ C
1
EAS
h
Operating and Store Temperature Range
150
mJ
IAS
5
A
TJ,Tstg
-55 to 175
C
Thermal Characteristics
Parameter
Symbol
Limit
Units
Thermal Resistance, Junction-to-Case
RθJC
1
3.1
C/W
Thermal Resistance, Junction-to-Ambient
RθJA
62.5
65
C/W
Rev 2. 2013.Jan
http://www.cetsemi.com
Details are subject to change without notice .
1
CEP07N65A/CEB07N65A
CEF07N65A
Electrical Characteristics
Parameter
Tc = 25 C unless otherwise noted
Symbol
Test Condition
Min
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250µA
650
Zero Gate Voltage Drain Current
IDSS
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
Typ
Max
Units
VDS = 650V, VGS = 0V
1
µA
IGSSF
VGS = 30V, VDS = 0V
100
nA
IGSSR
VGS = -30V, VDS = 0V
-100
nA
4
V
1.45
Ω
Off Characteristics
V
On Characteristics b
Gate Threshold Voltage
VGS(th)
VGS = VDS, ID = 250µA
Static Drain-Source
On-Resistance
RDS(on)
VGS = 10V, ID = 3A
1.15
Rg
f=1MHz,open Drain
1.5
Ω
1410
pF
115
pF
15
pF
Gate input resistance
Dynamic Characteristics
Input Capacitance
2
c
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Switching Characteristics
VDS = 25V, VGS = 0V,
f = 1.0 MHz
c
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
VDD = 300V, ID = 6A,
VGS = 10V, RGEN =25Ω
26
58
85
52
116
ns
ns
nC
Turn-Off Fall Time
tf
63
170
126
Total Gate Charge
Qg
28
36
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS = 480V, ID = 6A,
VGS = 10V
ns
ns
6
nC
9
nC
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
IS f
Drain-Source Diode Forward Voltage b
VSD
VGS = 0V, IS = 3A g
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature .
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .
c.Guaranteed by design, not subject to production testing.
d.Limited only by maximum temperature allowed .
e.Pulse width limited by safe operating area .
f.Full package IS(max) = 1A .
g.Full package VSD test condition IS = 1A .
h.L = 12mH, IAS =5A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C.
2
7
A
1.5
V
4
CEP07N65A/CEB07N65A
CEF07N65A
12
VGS=10,9,8,7V
5
ID, Drain Current (A)
ID, Drain Current (A)
6
4
3
2
VGS=4V
1
0
0
2
4
6
8
10
0
-55 C
2
4
6
8
10
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
RDS(ON), Normalized
RDS(ON), On-Resistance(Ohms)
Ciss
900
600
300
Coss
Crss
0
5
10
15
20
25
3.0
2.5
ID=3A
VGS=10V
2.0
1.5
1.0
0.5
0.0
-100
-50
0
50
100
150
200
VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
VDS=VGS
ID=250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50
25 C
TJ=125C
2
VGS, Gate-to-Source Voltage (V)
IS, Source-drain current (A)
C, Capacitance (pF)
VTH, Normalized
Gate-Source Threshold Voltage
4
12
1200
1.2
6
VDS, Drain-to-Source Voltage (V)
1500
1.3
8
0
1800
0
10
-25
0
25
50
75
100
125
150
VGS=0V
10
0
10
-1
10
-2
0.2
0.6
1.0
1.4
1.8
2.2
TJ, Junction Temperature( C)
VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3
10
VDS=480V
ID=6A
RDS(ON)Limit
8
ID, Drain Current (A)
VGS, Gate to Source Voltage (V)
CEP07N65A/CEB07N65A
CEF07N65A
6
4
2
0
0
6
12
18
24
10
1ms
10ms
10
10
30
100ms
1
DC
0
TC=25 C
TJ=175 C
Single Pulse
-1
10
0
10
1
10
2
10
Qg, Total Gate Charge (nC)
VDS, Drain-Source Voltage (V)
Figure 7. Gate Charge
Figure 8. Maximum Safe
Operating Area
VDD
t on
RL
V IN
D
VGS
RGEN
toff
tr
td(on)
td(off)
tf
90%
90%
VOUT
VOUT
10%
INVERTED
10%
G
90%
S
VIN
50%
50%
10%
PULSE WIDTH
Figure 10. Switching Waveforms
r(t),Normalized Effective
Transient Thermal Impedance
Figure 9. Switching Test Circuit
10
0
D=0.5
0.2
10
0.1
-1
PDM
0.05
0.02
0.01
t1
Single Pulse
10
-2
10
-2
t2
1. RθJC (t)=r (t) * RθJC
2. RθJC=See Datasheet
3. TJM-TC = P* RθJC (t)
4. Duty Cycle, D=t1/t2
10
-1
10
0
10
1
10
2
Square Wave Pulse Duration (msec)
Figure 11. Normalized Thermal Transient Impedance Curve
4
10
3
10
4
3