CET CEP9060R

CEP9060R/CEB9060R
CEF9060R
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type
VDSS
RDS(ON)
ID
@VGS
CEP9060R
55V
10.5mΩ
100A
10V
CEB9060R
55V
10.5mΩ
100A
CEF9060R
55V
10.5mΩ
100A
10V
e
10V
D
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 package & TO-220F full-pak for through hole.
G
D
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
G
D
CEP SERIES
TO-220
ABSOLUTE MAXIMUM RATINGS
Parameter
S
S
CEF SERIES
TO-220F
Tc = 25 C unless otherwise noted
Limit
Symbol
TO-220/263
TO-220F
Drain-Source Voltage
VDS
55
Gate-Source Voltage
VGS
±20
Drain Current-Continuous
Drain Current-Pulsed
a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
ID
IDM
PD
V
V
100
e
300
300
e
200
75
W
100
f
Units
A
A
1.3
0.5
W/ C
Single Pulsed Avalanche Energy d
EAS
480
480
mJ
Single Pulsed Avalanche Current d
IAS
50
50
A
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
C
Symbol
Limit
Units
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
RθJC
0.75
2
C/W
Thermal Resistance, Junction-to-Ambient
RθJA
62.5
65
C/W
2004.September
http://www.cetsemi.com
4 - 182
CEP9060R/CEB9060R
CEF9060R
Electrical Characteristics
Parameter
Tc = 25 C unless otherwise noted
Symbol
Test Condition
Min
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250µA
55
Zero Gate Voltage Drain Current
IDSS
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
Typ
Max
Units
VDS = 55V, VGS = 0V
25
µA
IGSSF
VGS = 20V, VDS = 0V
100
nA
IGSSR
VGS = -20V, VDS = 0V
-100
nA
4
V
10.5
mΩ
Off Characteristics
V
On Characteristics b
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forwand Transconductance
Dynamic Characteristics
VGS(th)
VGS = VDS, ID = 250µA
2
RDS(on)
VGS = 10V, ID = 62A
8.8
gFS
VDS = 25V, ID = 62A
30
S
2690
pF
798
pF
113
pF
c
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Switching Characteristics c
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
37
VDD = 28V, ID = 62A,
VGS = 10V, RGEN = 4.5Ω
75
ns
18
45
ns
67
120
ns
Turn-Off Fall Time
tf
16
40
ns
Total Gate Charge
Qg
60
80
nC
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS = 44V, ID = 62A,
VGS = 10V
16
nC
21
nC
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
IS
Drain-Source Diode Forward Voltage b
VSD
VGS = 0V, IS = 62A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.L = 260µH, IAS = 50A, VDD = 25V, RG = 25Ω, Starting TJ = 25 C
e.Limited only by maximum temperature allowed .
f .Pulse width limited by safe operating area .
4 - 183
62
A
1.3
V
4
CEP9060R/CEB9060R
CEF9060R
120
120
100
80
ID, Drain Current (A)
ID, Drain Current (A)
VGS=10,8,7V
VGS=6V
60
40
VGS=5V
20
0.5
1.0
1.5
2.5
1
2
3
4
5
6
7
VGS, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
Ciss
2400
1800
1200
Coss
Crss
0
0
5
10
15
20
25
2.2
1.9
ID=62A
VGS=10V
1.6
1.3
1.0
0.7
0.4
-100
-50
0
50
100
150
200
VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
IS, Source-drain current (A)
VDS=VGS
ID=250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50
-55 C
VDS, Drain-to-Source Voltage (V)
RDS(ON), Normalized
RDS(ON), On-Resistance(Ohms)
C, Capacitance (pF)
25 C
3.0
600
VTH, Normalized
Gate-Source Threshold Voltage
40
TJ=125 C
2.0
3000
1.2
60
0
3600
1.3
80
20
VGS=4V
0
0.0
100
VGS=0V
10
10
10
-25
0
25
50
75
100
125
150
2
1
0
0.2
0.6
1.0
1.4
1.8
2.2
TJ, Junction Temperature( C)
VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
4 - 184
10
10
VDS=44V
ID=62A
6
4
2
0
RDS(ON)Limit
10
10
10
0
10
3
4
8
ID, Drain Current (A)
VGS, Gate to Source Voltage (V)
CEP9060R/CEB9060R
CEF9060R
20
30
40
50
60
2
100µs
1ms
10ms
DC
1
TC=25 C
TJ=150 C
Single Pulse
0
10
-1
10
0
10
1
10
Qg, Total Gate Charge (nC)
VDS, Drain-Source Voltage (V)
Figure 7. Gate Charge
Figure 8. Maximum Safe
Operating Area
VDD
t on
RL
V IN
D
td(off)
tf
90%
90%
VOUT
VOUT
VGS
RGEN
toff
tr
td(on)
10%
INVERTED
10%
G
90%
S
VIN
50%
50%
10%
PULSE WIDTH
Figure 10. Switching Waveforms
r(t),Normalized Effective
Transient Thermal Impedance
Figure 9. Switching Test Circuit
10
0
D=0.5
0.2
10
0.1
-1
PDM
0.05
0.02
0.01
t1
t2
1. RθJC (t)=r (t) * RθJC
2. RθJC=See Datasheet
3. TJM-TC = P* RθJC (t)
4. Duty Cycle, D=t1/t2
Single Pulse
10
-2
10
-2
10
-1
10
0
10
1
10
2
Square Wave Pulse Duration (msec)
Figure 11. Normalized Thermal Transient Impedance Curve
4 - 185
10
3
10
4
2