CET CEPF630_07

CEPF630/CEBF630
CEFF630
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
VDSS
RDS(ON)
ID
@VGS
CEPF630
Type
200V
0.35Ω
10A
10V
CEBF630
200V
0.35Ω
10A
10V
CEFF630
200V
0.35Ω
10A d
10V
D
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
G
D
G
D
S
G
S
CEB SERIES
TO-263(DD-PAK)
G
CEP SERIES
TO-220
ABSOLUTE MAXIMUM RATINGS
Parameter
D
S
Tc = 25 C unless otherwise noted
Limit
Symbol
TO-220/263
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current-Pulsed
S
CEF SERIES
TO-220F
ID
IDM
a
Maximum Power Dissipation @ TC = 25 C
e
PD
- Derate above 25 C
Operating and Store Temperature Range
TJ,Tstg
TO-220F
200
Units
V
±20
V
A
10
10
d
40
40
d
75
33
W
0.27
W/ C
0.6
-55 to 150
A
C
Thermal Characteristics
Parameter
Symbol
Limit
Units
Thermal Resistance, Junction-to-Case
RθJC
1.5
3.7
C/W
Thermal Resistance, Junction-to-Ambient
RθJA
62.5
65
C/W
Rev 2. 2007.March
http://www.cetsemi.com
Details are subject to change without notice .
1
CEPF630/CEBF630
CEFF630
Electrical Characteristics
Parameter
Tc = 25 C unless otherwise noted
Symbol
Test Condition
Min
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250µA
200
Zero Gate Voltage Drain Current
IDSS
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
Typ
Max
Units
VDS = 160V, VGS = 0V
25
µA
IGSSF
VGS = 20V, VDS = 0V
100
nA
IGSSR
VGS = -20V, VDS = 0V
-100
nA
4
V
350
mΩ
Off Characteristics
V
On Characteristics b
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Dynamic Characteristics
VGS(th)
VGS = VDS, ID = 250µA
RDS(on)
VGS = 10V, ID = 5A
gFS
VDS = 10V, ID = 5A
2
6
S
680
pF
105
pF
40
pF
c
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Switching Characteristics c
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
VDD = 100V, ID = 5A,
VGS = 10V, RGEN = 50Ω
50
100
ns
80
160
ns
55
110
ns
Turn-Off Fall Time
tf
40
80
ns
Total Gate Charge
Qg
27
54
nC
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS = 160V, ID =5.9A,
VGS = 10V
4
nC
14.7
nC
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
IS
Drain-Source Diode Forward Voltage b
VSD
VGS = 0V, IS = 10A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature .
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .
c.Guaranteed by design, not subject to production testing.
d.Limited only by maximum temperature allowed .
e.Pulse width limited by safe operating area .
f.Full package IS(max) = 6.4A .
g.Full package VSD test condition IS = 6.4A .
4 - 191
10
A
1.5
V
4
CEPF630/CEBF630
CEFF630
20
10
ID, Drain Current (A)
ID, Drain Current (A)
12
8
VGS=10,8,6,5V
6
4
VGS=4V
2
0
0
1
2
3
4
5
RDS(ON), Normalized
RDS(ON), On-Resistance(Ohms)
450
300
Coss
150
Crss
0
5
10
15
20
25
1
2
3
4
5
3.0
2.5
ID=5A
VGS=10V
2.0
1.5
1.0
0.5
0.0
-100
-50
0
50
100
150
200
VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
VDS=VGS
ID=250µA
IS, Source-drain current (A)
C, Capacitance (pF)
VTH, Normalized
Gate-Source Threshold Voltage
0
Figure 2. Transfer Characteristics
Ciss
1.1
1.0
0.9
0.8
0.7
0.6
-50
TJ=125 C
5
Figure 1. Output Characteristics
600
1.2
-55 C
VGS, Gate-to-Source Voltage (V)
750
1.3
10
VDS, Drain-to-Source Voltage (V)
900
0
15
0
6
25 C
-25
0
25
50
75
100
125
150
VGS=0V
10
1
10
0
10
-1
0.4
0.6
0.8
1.0
1.2
1.4
TJ, Junction Temperature( C)
VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
4 - 192
10
10
VDS=160V
ID=5.9A
8
ID, Drain Current (A)
VGS, Gate to Source Voltage (V)
CEPF630/CEBF630
CEFF630
6
4
2
0
4
8
12
16
20
24
28
10ms
RDS(ON)Limit
100ms
10
1
1ms
10ms
DC
10
0
2
TC=25 C
TJ=150 C
Single Pulse
0
10
0
10
1
10
2
Qg, Total Gate Charge (nC)
VDS, Drain-Source Voltage (V)
Figure 7. Gate Charge
Figure 8. Maximum Safe
Operating Area
VDD
t on
V IN
RL
D
VGS
RGEN
toff
tr
td(on)
VOUT
td(off)
tf
90%
90%
VOUT
10%
INVERTED
10%
G
90%
S
VIN
50%
50%
10%
PULSE WIDTH
Figure 10. Switching Waveforms
r(t),Normalized Effective
Transient Thermal Impedance
Figure 9. Switching Test Circuit
10
0
D=0.5
0.2
10
10
0.1
-1
PDM
0.05
0.02
0.01
Single Pulse
t1
-2
10
-5
t2
1. RθJC (t)=r (t) * RθJC
2. RθJC=See Datasheet
3. TJM-TC = P* RθJC (t)
4. Duty Cycle, D=t1/t2
10
-4
10
-3
10
-2
10
-1
Square Wave Pulse Duration (sec)
Figure 11. Normalized Thermal Transient Impedance Curve
4 - 193
10
0
10
1
4