A42U2604 Series - AMIC Technology

A42U2604 Series
4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE
Document Title
4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE
Revision History
History
Issue Date
Remark
0.0
Initial issue
June 13, 2001
Preliminary
0.1
Modify symbol HE dimensions in TSOP 24L package information
July 10, 2001
0.2
Modify AC. and DC. data
December 12, 2001
0.3
Modify DC data and all parts guarantee self-refresh mode
June 10, 2002
1.0
Final version release
September 29, 2003
Rev. No.
(September, 2003, Version 1.0)
Final
AMIC Technology, Corp.
A42U2604 Series
4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE
Features
n Organization: 4,194,304 words X 4 bits
n Part Identification
- A42U2604 (2K Ref.)
n Single 2.5V power supply/built-in VBB generator
n Low power consumption
- Operating: 70mA (-50 max)
- Standby: 0.5mA (TTL), 0.2mA (CMOS),
300µA (Self-refresh current)
n High speed
- 50/60/80 ns RAS access time
- 22/27/37 ns column address access time
- 13/15/20 ns CAS access time
- 20/24/32 ns EDO Page Mode Cycle Time
n Industrial operating temperature range: -40°C to +85°C
for -U
n Fast Page Mode with Extended Data Out
n 2K Refresh Cycle in 32ms
n Read-modify-write, RAS -only, CAS -before- RAS ,
Hidden refresh capability
n TTL-compatible, three-state I/O
n JEDEC standard packages
- 300mil, 24/26-pin SOJ
- 300mil, 24/26-pin TSOP type II package
General Description
This allow random access of up to 2048(2K Ref.) words
within a row at a 50/42/31 MHz EDO cycle, making the
A42U2604 ideally suited for graphics, digital signal
processing and high performance computing systems.
The A42U2604 is a new generation randomly accessed
memory for graphics, organized in a 4,194,304-word by
4-bit configuration. This product can execute Write and
Read operation via CAS pin.
The A42U2604 offers an accelerated Fast Page Mode
cycle with a feature called Extended Data Out (EDO).
Pin Configuration
n SOJ
Pin Descriptions
n TSOP
Symbol
VCC
26
1
VSS
VCC
26
1
25
I/O3
I/O0
2
25
I/O3
3
24
I/O2
I/O1
3
24
I/O2
WE
4
23
CAS
WE
4
23
CAS
RAS
5
22
OE
RAS
5
22
OE
NC
6
21
A9
NC
6
21
A9
A10
8
19
A8
A10
8
19
A8
A0
9
18
A7
A0
9
18
A7
A1
10
17
A6
A1
10
17
A6
A42U2604V
2
A42U2604S
I/O0
I/O1
A2
11
16
A5
A2
11
16
A5
A3
12
15
A4
A3
12
15
A4
VCC
13
14
VSS
VCC
13
14
VSS
(September, 2003, Version 1.0)
Description
VSS
1
A0 - A10
Address Inputs (2K product)
I/O0 - I/O3
Data Input/Output
RAS
Row Address Strobe
CAS
Column Address Strobe
WE
Write Enable
OE
Output Enable
VCC
2.5V Power Supply
VSS
Ground
NC
No Connection
AMIC Technology, Corp.
A42U2604 Series
Selection Guide
Symbol
Description
-50
-60
-80
Unit
tRAC
Maximum RAS Access Time
50
60
80
ns
tAA
Maximum Column Address Access Time
22
27
37
ns
tCAC
Maximum CAS Access Time
13
15
20
ns
tOEA
Maximum Output Enable ( OE ) Access Time
13
15
20
ns
tRC
Minimum Read or Write Cycle Time
84
100
132
ns
tPC
Minimum EDO Cycle Time
20
24
32
ns
Functional Description
The A42U2604 reads and writes data by multiplexing an
22-bit address into a 11-bit(2K) row and column address.
RAS and CAS are used to strobe the row address and the
column address, respectively.
valid as long as RAS and OE are low, and WE is high;
this is the only characteristic which differentiates Extended
Data Out operation from a standard Read or Fast Page
Read.
A Read cycle is performed by holding the WE signal high
during RAS / CAS operation. A Write cycle is executed by
A memory cycle is terminated by returning both RAS and
CAS high. Memory cell data will retain its correct state by
maintaining power and accessing all 2048(2K)
combinations of the 11-bit(2K) row addresses, regardless
of sequence, at least once every 32ms through any RAS
cycle (Read, Write) or RAS Refresh cycle ( RAS -only,
CBR, or Hidden). The CBR Refresh cycle automatically
controls the row addresses by invoking the refresh counter
and controller.
holding the WE signal low during RAS / CAS operation;
the input data is latched by the falling edge of WE or
CAS , whichever occurs later. The data inputs and outputs
are routed through 4 common I/O pins, with RAS , CAS ,
WE and OE controlling the in direction.
EDO Page Mode operation all 2048(2K) columns within a
selected row to be randomly accessed at a high data rate.
A EDO Page Mode cycle is initiated with a row address
latched by RAS followed by a column address latched by
CAS . While holding RAS low, CAS can be toggled to
strobe changing column addresses, thus achieving shorter
cycle times.
The A42U2604 offers an accelerated Fast Page Mode
cycle through a feature called Extended Data Out, which
keeps the output drivers on during the CAS precharge
time (tcp). Since data can be output after CAS goes high,
the user is not required to wait for valid data to appear
before starting the next access cycle. Data-out will remain
(September, 2003, Version 1.0)
Power-On
The initial application of the VCC supply requires a 200 µs
wait followed by a minimum of any eight initialization cycles
containing a RAS clock. During Power-On, the VCC
current is dependent on the input levels of RAS and CAS .
It is recommended that RAS and CAS track with VCC or
be held at a valid VIH during Power-On to avoid current
surges.
2
AMIC Technology, Corp.
A42U2604 Series
Block Diagram
RAS
CAS
Vcc
Control
Clocks
VBB Generator
Vss
WE
Refresh Timer
Row Decoder
Refresh control
Refresh Counter
A0~A10
A0~A10
Data out
Buffer
I/O0
to
I/O3
OE
Row Address Buffer
Col. Address Buffer
Recommended Operating Conditions
Symbol
Memory Array
4,194,304 X 4
Cells
Sense Amps & I/O
Data in
Buffer
Description
Column Decoder
(Ta = 0°C to +70°C or -40°C to +85°C)
Min.
Typ.
Max.
Unit
2.25
2.5
2.75
V
VCC
Power Supply
VSS
Input High Voltage
0
0
0
V
VIH
Input High Voltage
1.8
-
VCC + 0.2
V
VIL
Input Low Voltage
-0.5
-
0.8
V
(September, 2003, Version 1.0)
3
AMIC Technology, Corp.
A42U2604 Series
Truth Table
Function
RAS
CAS
Standby
H
Read: Word
L
Read
Write: Word (Early)
Write (Early)
Address
I/Os
WE
OE
H
X
X
X
High-Z
L
H
L
Row/Col.
Data Out
L
L
H
L
Row/Col.
Data Out
L
L
L
X
Row/Col.
Data In
L
L
L
X
Row/Col.
Data In
Read-Write
L
L
H→L
L→H
Row/Col.
Data Out → Data In
EDO-Page-Mode Read: Hi-Z
-First cycle
-Subsequent Cycles
L
L
H→L
H
H
H→L
H→L
Row/Col.
Col.
Data Out
Data Out
EDO-Page-Mode Write(Early)
-First cycle
-Subsequent Cycles
L
L
H→L
H→L
L
L
X
X
Row/Col.
Col.
Data In
Data In
EDO-Page-Mode Read-Write
-First cycle
-Subsequent Cycles
L
L
H→L
H→L
L→H
Data Out → Data In
H→L
H→L
L→H
Row/Col.
Col.
Hidden Refresh Read
L→H→L
L
H
L
Row/Col.
Data Out
Hidden Refresh Write
L→H→L
L
L
X
Row/Col.
Data In → High-Z
L
H
X
X
Row
High-Z
CBR Refresh
H→L
L
X
X
X
High-Z
Self Refresh
H→L
L
H
X
X
High-Z
RAS -Only Refresh
(September, 2003, Version 1.0)
H→L
4
Data Out → Data In
AMIC Technology, Corp.
A42U2604 Series
Absolute Maximum Ratings*
*Comments
Input Voltage (Vin) . . . . . . . . . . . . . . . -0.5V to VCC+0.5V
Output Voltage (Vout) . . . . . . . . . . . . . -0.5V to VCC+0.5V
Power Supply Voltage (VCC) . . . . . . . -0.5V to VCC+0.5V
Operating Temperature (TOPR) . . . . . . . . . . 0°C to +70°C
Storage Temperature (TSTG) . . . . . . . . . -55°C to +150°C
Soldering Temperature X Time (TSOLDER) . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C X 10sec
Power Dissipation (PD) . . . . . . . . . . . . . . . . . . . . . . . . 1W
Short Circuit Output Current (Iout) . . . . . . . . . . . . . . 50mA
Latch-up Current . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA
Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to this device.
These are stress ratings only. Functional operation of
this device at these or any other conditions above
those indicated in the operational sections of these
specification is not implied or intended. Exposure to
the absolute maximum rating conditions for extended
periods may affect device reliability.
DC Electrical Characteristics (VCC = 2.5V ± 10%, VSS = 0V, Ta = 0°C to +70°C or -40°C to +85°C)
-50
Symbol
-60
-80
Parameter
Unit
Min.
Max.
Min.
Max.
Min.
Max.
Test Conditions
IIL
Input Leakage
Current
-5
+5
-5
+5
-5
+5
µA
0V ≤ Vin ≤ Vin + 0.2V
Pins not under
Test = 0V
IOL
Output Leakage
Current
-5
+5
-5
+5
-5
+5
µA
DOUT disabled,
0V ≤ Vout ≤ + VCC
ICC1
Operating Power
Supply Current
-
70
-
65
-
60
mA
RAS , UCAS , LCAS
Address cycling; tRC = min.
ICC2
TTL Standby Power
Supply Current
-
0.5
-
0.5
-
0.5
mA
RAS = UCAS = LCAS =VIH
ICC3
Average Power
Supply Current,
RAS Refresh Mode
-
70
-
65
-
60
mA
RAS cycling,
ICC4
EDO Page Mode
Average Power
Supply Current
-
70
-
65
-
60
mA
RAS = VIL,
UCAS , LCAS Address
cycling; tPC = min.
ICC5
CAS -before- RAS
Refresh Power
Supply Current
-
70
-
65
-
60
mA
RAS , UCAS , LCAS
cycling; tRC = min.
ICC6
CMOS Standby
Power Supply
Current
-
0.2
-
0.2
-
0.2
mA
RAS = UCAS = LCAS =
VCC - 0.2V
ICC7
Self Refresh Mode
Current
-
300
-
300
-
300
µA
RAS = CAS ≤ VSS+0.2V
All other input high levels
are VCC-0.2V or input low
levels are VSS +0.2V
2.0
-
2.0
-
2.0
-
V
IOUT = -2mA
-
0.4
-
0.4
-
0.4
V
IOUT = 2mA
VOH
Notes
1, 2
1
UCAS = LCAS = VIH,
tRC = min.
1, 2
1
Output Voltage
VOL
(September, 2003, Version 1.0)
5
AMIC Technology, Corp.
A42U2604 Series
AC Characteristics (VCC = 2.5V ±10%, VSS = 0V, Ta = 0°C to +70°C or -40°C to +85°C)
Test Conditions:
Input timing reference level: VIH/VIL=1.8V/0.8V
Output reference level: VOH/VOL=1.6V/0.8V
Output Load: 1TTL gate + CL (100pF)
Assumed tT=2ns
#
Std
Symbol
-50
-60
-80
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Unit
Notes
4, 5
tT
Transition Time (Rise and Fall)
1
50
1
50
1
50
ns
1
tRC
Random Read or Write Cycle Time
84
-
100
-
132
-
ns
2
tRP
RAS Precharge Time
30
-
36
-
48
-
ns
3
tRAS
RAS Pulse Width
50
10K
60
10K
80
10K
ns
4
tCAS
CAS Pulse Width
8
10K
10
10K
14
10K
ns
5
tRCD
RAS to CAS Delay Time
11
37
13
45
17
60
ns
6
6
tRAD
RAS to Column Address Delay Time
9
28
11
33
15
43
ns
7
7
tRSH
CAS to RAS Hold Time
8
-
10
-
14
-
ns
8
tCSH
CAS Hold Time
37
-
41
-
49
-
ns
9
tCRP
CAS to RAS Precharge Time
5
-
5
-
5
-
ns
10
tASR
Row Address Setup Time
0
-
0
-
0
-
ns
11
tRAH
Row Address Hold Time
8
-
10
-
14
-
ns
12
tCLZ
CAS to Output in Low Z
3
-
3
-
3
-
ns
8
13
tRAC
Access Time from RAS
-
50
-
60
-
80
ns
6,7
14
tCAC
Access Time from CAS
-
13
-
15
-
20
ns
6, 12
15
tAA
Access Time from Column Address
-
22
-
27
-
37
ns
7, 12
16
tOEA
Access Time from OE
-
13
-
15
-
20
ns
17
tAR
Column Address Hold Time from RAS
45
-
55
-
74
-
ns
18
tRCS
Read Command Setup Time
0
-
0
-
0
-
ns
19
tRCH
Read Command Hold Time
0
-
0
-
0
-
ns
(September, 2003, Version 1.0)
6
9
AMIC Technology, Corp.
A42U2604 Series
AC Characteristics (continued) (VCC = 2.5V ±10%, VSS = 0V, Ta = 0°C to +70°C or -40°C to +85°C)
Test Conditions:
Input timing reference level: VIH/VIL=1.8V/0.8V
Output reference level: VOH/VOL=1.6V/0.8V
Output Load: 1TTL gate + CL (100pF)
Assumed tT=2ns
#
Std
Symbol
-50
-60
-80
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Unit
Notes
9
20
tRRH
Read Command Hold Time Reference
to RAS
0
-
0
-
0
-
ns
21
tRAL
Column Address to RAS Lead Time
22
-
27
-
37
-
ns
22
tCOH
Output Hold After CAS Low
3
-
4
-
5
-
ns
23
tOFF
Output Buffer Turn-Off Delay Time
-
3
-
5
-
10
ns
24
tASC
Column Address Setup Time
0
-
0
-
0
-
ns
25
tCAH
Column Address Hold Time
8
-
10
-
14
-
ns
26
tOES
OE Low to CAS High Set Up
10
-
10
-
10
-
ns
27
tWCS
Write Command Setup Time
0
-
0
-
0
-
ns
11
28
tWCH
Write Command Hold Time
8
-
10
-
14
-
ns
11
29
tWCR
Write Command Hold Time to RAS
45
-
55
-
74
-
ns
30
tWP
Write Command Pulse Width
8
-
10
-
14
-
ns
31
tRWL
Write Command to RAS Lead Time
13
-
15
-
20
-
ns
32
tCWL
Write Command to CAS Lead Time
8
-
10
-
14
-
ns
33
tDS
Data-in setup Time
0
-
0
-
0
-
ns
34
tDH
Data-in Hold Time
8
-
10
-
14
-
ns
35
tDHR
Data-in Hold Time to RAS
45
-
55
-
74
-
ns
36
tRWC
Read-Modify-Write Cycle Time
114
-
135
-
179
-
ns
37
tRWD
RAS to WE Delay Time (Read-ModifyWrite)
65
-
78
-
105
-
ns
11
38
tCWD
CAS to WE Delay Time (Read-ModifyWrite)
28
-
33
-
45
-
ns
11
(September, 2003, Version 1.0)
7
8, 10
AMIC Technology, Corp.
A42U2604 Series
AC Characteristics (continued) (VCC = 2.5V ± 10%, VSS = 0V, Ta = 0°C to +70°C or -40°C to +85°C)
Test Conditions:
Input timing reference level: VIH/VIL=1.8V/0.8V
Output reference level: VOH/VOL=1.6V/0.8V
Output Load: 1TTL gate + CL (100pF)
Assumed tT=2ns
#
39
Std
Symbol
tAWD
-50
-60
-80
Parameter
Unit
Notes
-
ns
11
Min.
Max.
Min.
Max.
Min.
Max.
37
-
45
-
62
Column Address to WE Delay Time
(Read-Modify-Write)
40
tOEH
OE Hold Time from WE
8
-
10
-
14
-
ns
41
tOEP
OE High Pulse Width
5
-
5
-
5
-
ns
42
tPC
Read or Write Cycle Time (EDO Page)
20
-
24
-
32
-
ns
13
43
tCPA
-
23
-
27
-
36
ns
12
Access Time from CAS Precharge
(EDO Page)
44
tCP
CAS Precharge Time (EDO Page)
8
-
10
-
14
-
ns
45
tPCM
EDO Page Mode RMW Cycle Time
50
-
59
-
79
-
ns
46
tCRW
EDO Page Mode CAS Pulse Width
(RMW)
38
-
45
-
61
-
ns
47
tRASP
RAS Pulse Width
50
100K
60
100K
80
100K
ns
48
tCSR
CAS Setup Time ( CAS -before- RAS )
5
-
5
-
5
-
ns
3
49
tCHR
CAS Hold Time
10
-
10
-
15
-
ns
3
50
tRPC
5
-
5
-
5
-
ns
(EDO Page)
( CAS -before- RAS )
RAS to CAS Precharge Time
( CAS -before- RAS )
51
tOEZ
Output Buffer Turn-off Delay from OE
-
3
-
5
-
10
ns
52
tRASS
RAS pulse width ( C -B- R self-refresh)
100
-
100
-
100
-
µs
53
tRPS
84
-
100
-
132
-
ns
-50
-
-50
-
-50
-
ns
RAS precharge time
8
( C -B- R self-refresh)
54
tCHS
CAS hold time ( C -B- R self-refresh)
(September, 2003, Version 1.0)
8
AMIC Technology, Corp.
A42U2604 Series
Notes:
1. ICC1, ICC3, ICC4, and ICC5 depend on cycle rate.
2. ICC1 and ICC4 depend on output loading. Specified values are obtained with the outputs open.
3. An initial pause of 200µs is required after power-up followed by any 8 RAS cycles before proper device operation is
achieved. In the case of an internal refresh counter, a minimum of 8 CAS -before- RAS initialization cycles instead of 8
RAS cycles are required. 8 initialization cycles are required after extended periods of bias without.
4. AC Characteristics assume tT = 2ns. All AC parameters are measured with a load equivalent to one TTL load and
100pF, VIL (min.) ≥ GND and VIH (max.) ≤ VCC.
5. VIH (min.) and VIL (max.) are reference levels for measuring timing of input signals. Transition times are measured
between VIH and VIL.
6. Operation within the tRCD (max.) limit insures that tRAC (max.) can be met. tRCD (max.) is specified as a reference
point only. If tRCD is greater than the specified tRCD (max.) limit, then access time is controlled exclusively by tCAC.
7. Operation within the tRAD (max.) limit insures that tRAC (max.) can be met. tRAD (max.) is specified as a reference
point only. If tRAD is greater than the specified tRAD (max.) limit, then access time is controlled exclusively by tAA.
8. Assumes three state test load (5pF and a 500Ω Thevenin equivalent).
9. Either tRCH or tRRH must be satisfied for a read cycle.
10. tOFF (max.) defines the time at which the output achieves the open circuit condition; it is not referenced to output
voltage levels.
11. tWCS, tWCH, tRWD, tCWD and tAWD are not restrictive operating parameters. They are included in the data sheet
as electrical characteristics only. If tWCS ≥ tWCS (min.) and tWCH ≥ tWCH (min.), the cycle is an early write cycle
and data-out pins will remain open circuit, high impedance, throughout the entire cycle. If tRWD ≥ tRWD (min.) , tCWD ≥
tCWD (min.) and tAWD ≥ tAWD (min.), the cycle is a read-modify-write cycle and the data out will contain data read from
the selected cell. If neither of the above conditions is satisfied, the condition of the data out at access time is
indeterminate.
12. Access time is determined by the longer of tAA or tCAC or tCPA.
13. tASC ≥ tCP to achieve tPC (min.) and tCPA (max.) values.
(September, 2003, Version 1.0)
9
AMIC Technology, Corp.
A42U2604 Series
Word Read Cycle
tRC(1)
tRAS(3)
tRP(2)
RAS
tCSH(8)
tCRP(9)
tRCD(5)
tRSH(7)
tCRP(9)
tCAS(4)
CAS
tRAD(6)
tASR(10)
Address
tRAL(21)
tRAH(11)
tASC(24)
Row Address
tCAH(25)
Column Address
tAR(17)
tRCH(19)
tRCS(18)
tRRH(20)
WE
tOEA(16)
OE
tCAC(14)
tAA(15)
tRAC(13)
I/O 0 ~
I/O 3
tOFF(23)
tOEZ(51)
High-Z
Valid Data-out
tCLZ(12)
: High or Low
(September, 2003, Version 1.0)
10
AMIC Technology, Corp.
A42U2604 Series
Word Write Cycle (Early Write)
tRC(1)
tRAS(3)
tRP(2)
RAS
tCSH(8)
tCRP(9)
tRCD(5)
tRSH(7)
tCRP(9)
tCAS(4)
CAS
tAR(17)
tRAD(6)
tASR(10)
tRAL(21)
tRAH(11)
tCAH(25)
tASC(24)
Address
Row Address
Column Address
tWCR(29)
tCWL(32)
tRWL(31)
tWP(30)
WE
tWCS(27)
tWCH(28)
OE
tDHR(35)
tDS(33)
I/O 0 ~
I/O 3
tDH(34)
Valid Data-in
: High or Low
(September, 2003, Version 1.0)
11
AMIC Technology, Corp.
A42U2604 Series
Word Write Cycle (Late Write)
tRC(1)
tRAS(3)
tRP(2)
RAS
tCSH(8)
tCRP(9)
tRCD(5)
tRSH(7)
tCRP(9)
tCAS(4)
CAS
tAR(17)
tRAD(6)
tASR(10)
tRAL(21)
tRAH(11)
tCAH(25)
tASC(24)
Address
Row Address
Column Address
tCWL(32)
tRWL(31)
tWCR(29)
tWP(30)
WE
tOEH(40)
OE
tDHR(35)
tDS(33)
I/O 0 ~
I/O 3
tDH(34)
High-Z
Vaild Data-in
: High or Low
(September, 2003, Version 1.0)
12
AMIC Technology, Corp.
A42U2604 Series
Word Read-Modify-Write Cycle
tRWC(36)
tRAS(3)
tRP(2)
RAS
tCSH(8)
tCRP(9)
tRCD(5)
tRSH(7)
tCRP(9)
CAS
tAR(17)
tRAD(6)
tASR(10)
Address
tRAH(11)
Row Address
tASC(24)
tCAH(25)
Column Address
tAWD(39)
tCWL(32)
tCWD38)
tRCS(18)
tRWD(37)
tRWL(31)
WE
tWP(30)
tOEA(16)
tOEZ(51)
OE
tOEH(40)
tCAC(14)
tAA(15)
tDS(33)
tDH(34)
tRAC(13)
I/O 0 ~
I/O 3
High-Z
Data-out
Data-in
tCLZ(12)
: High or Low
(September, 2003, Version 1.0)
13
AMIC Technology, Corp.
A42U2604 Series
EDO Page Mode Word Read Cycle
tRASP(47)
tRP(2)
RAS
tCSH(8)
tCRP(9)
tPC(42)
tRSH(7)
tCRP(9)
tRCD(5)
tCP(44)
tCAS(4)
tCAS(4)
tCAS(4)
CAS
tCSH(8)
tAR(16)
tASR(10)
Address
tRAD(6)
tRAH(11)
tRAL(21)
tCAH(25)
tCAH(25)
tASC(24)
tASC(24)
Row
Column
Column
tCAH(25)
Column
tRCS(18)
tRCS(18)
tRCH(19)
tRCH(25)
tRCS(18)
WE
tAA(15)
tAA(15)
tRRH(20)
tCPA(43)
tOEA(16)
tOEA(16)
tOES(26)
OE
tCAC(14)
tRAC(13)
tCAC(14)
tOEP(41)
tCOH(22)
tCLZ(12)
I/O 0 ~
I/O 3
Data-out
tOFF(23)
tCAC(14)
tOEZ(51)
tOEZ(51)
Data-out
Data-out
tCLZ(12)
: High or Low
(September, 2003, Version 1.0)
14
AMIC Technology, Corp.
A42U2604 Series
EDO Page Mode Early Word Write Cycle
tRASP(47)
tRP(2)
RAS
tCSH(8)
tCRP(9)
tPC(42)
tRSH(7)
tCRP(9)
tRCD(5)
tCAS(4)
tCP(44)
tCAS(4)
tCP(44)
tCAS(4)
CAS
tRAL(21)
tRAD(6)
tASR(10)
Address
tCAH(25)
tRAH(11)
tASC(24)
Row
tCAH(25)
tASC(24)
tCAH(25)
tASC(24)
Column
Column
tCWL(32)
tCWL(32)
Column
tCWL(32)
tRWL(31)
tWCS(27)
tWCS(27)
tWCS(27)
tWCH(28)
tWCH(28)
tWCH(28)
WE
tWP(30)
tWP(30)
tWP(30)
OE
tDH(34)
tDS(33)
I/O 0 ~
I/O 3
tDH(34)
tDS(33)
Data-in
tDH(34)
tDS(33)
Data-in
Data-in
: High or Low
(September, 2003, Version 1.0)
15
AMIC Technology, Corp.
A42U2604 Series
EDO Page Mode Word Read-Modify-Write Cycle
tRP(2)
tRASP(47)
RAS
tCSH(8)
tCRP(9)
tPCM(45)
tRSH(7)
tCRP(9)
tRCD(5)
tCRW(46)
tCP(44)
tCP(44)
tCRW(46)
tCRW(46)
CAS
tRAL(21)
tRAD(6)
tASR(10)
tCAH(25)
tRAH(11)
Address
Row
tCAH(25)
tCAH(25)
tASC(24)
tASC(24)
Column
tASC(24)
Column
Column
tCWL(32)
tCWL(32)
tCWL(32)
tRWD(37)
tRWL(31)
tRCS(18)
tCWD(38)
tCWD(38)
tCWD(38)
WE
tWP(30)
tAWD(39)
tWP(30)
tAWD(39)
tOEA(16)
tWP(30)
tAWD(39)
tOEA(16)
tOEA(16)
OE
tOEH(40)
tCAC(14)
tCPA(43)
tAA(15)
tOEZ(51)
tAA(15)
tOEZ(51)
tOEZ(51)
tDH(34)
tRAC(13)
tDH(34)
tDH(34)
tDS(33)
tDS(33)
tDS(33)
I/O 0 ~
I/O 3
tCPA(43)
tAA(15)
High-Z
tCLZ(12)
tCLZ(12)
tCLZ(12)
Data-in
Data-out
Data-in
Data-out
Data-in
Data-out
: High or Low
(September, 2003, Version 1.0)
16
AMIC Technology, Corp.
A42U2604 Series
RAS Only Refresh Cycle
tRC(1)
tRAS(3)
tRP(2)
RAS
tRPC(50)
tCRP(9)
CAS
tASR(10)
tRAH(11)
Row
Address
Note: WE, OE = Don't care.
: High or Low
CAS Before RAS Refresh Cycle
tRC(1)
tRP(2)
tRAS(3)
tRP(2)
RAS
tRPC(50)
tCHR(49)
tCSR(48)
tPC(44)
CAS
tOFF(23)
High-Z
I/O 0 ~
I/O 3
Note: WE, OE, Address = Don't care.
(September, 2003, Version 1.0)
: High or Low
17
AMIC Technology, Corp.
A42U2604 Series
Hidden Refresh Cycle (Word Read)
tRC(1)
tRC(1)
tRAS(3)
tRP(2)
tRAS(3)
tRP(2)
RAS
tAR(17)
tCRP(9)
tRSH(7)
tRCD(5)
tCHR(49)
tCRP(9)
UCAS
LCAS
tRAD(6)
tASR(10)
tRAL(21)
tCAH(25)
tRAH(11)
tASC(24)
A0~A8
Row
Column
tRCS(18)
tRRH(20)
WE
tAA(15)
tOEZ(51)
tOEA(16)
OE
tCAC(14)
tOFF(23)
tCLZ(12)
tRAC(13)
I/O0 ~
I/O 15
High-Z
Valid Data-out
: High or Low
(September, 2003, Version 1.0)
18
AMIC Technology, Corp.
A42U2604 Series
Hidden Refresh Cycle (Early Word Write)
tRC(1)
tRC(1)
tRAS(3)
tRP(2)
tRAS(3)
tRP(2)
RAS
tAR(17)
tCRP(9)
tCHR(49)
tRSH(7)
tRCD(5)
tCRP(9)
CAS
tRAD(6)
tASR(10)
tRAH(11)
tRAL(21)
tCAH(25)
tASC(24)
Address
Row
Column
tWCS(27)
tWCH(28)
tWP(30)
WE
OE
tDS(33)
I/O 0 ~
I/O 3
tDH(34)
Valid Data-in
: High or Low
(September, 2003, Version 1.0)
19
AMIC Technology, Corp.
A42U2604 Series
EDO Page Mode Read-Early-Write Cycle (Pseudo Read-Modify-Write)
tRP(2)
tRASP(47)
RAS
tCSH(8)
tPC(42)
tRCD(5)
tCRP(9)
tCAS(4)
tPC(42)
tCP(44)
tCAS(4)
tRSH(7)
tCP(44)
tCAS(4)
tCPR(9)
CAS
tRAL(21)
tRAD(6)
tASR(10)
Address
tASC(24)
tRAH(11) tASC(24)
Row
tCAH(25)
tASC(24)
tCAH(25)
Column
Column
tCAH(25)
Column
tRCH(19)
tRCS(18)
tWCS(27)
WE
tWCH(28)
tAA(15)
tAA(15)
tCAP(43)
tDS(33)
tDH(34)
tRAC(13)
tCAC(14)
tCAC(14)
tOEA(16)
OE
tCOH(22)
I/O 0 ~
I/O 3
Data-out
Data-out
Data-in
: High or Low
(September, 2003, Version 1.0)
20
AMIC Technology, Corp.
A42U2604 Series
Self Refresh Mode
tRP(2)
tRASS(52)
tRPS(53)
RAS
tCHS(54)
tCSR(48)
tRPC(50)
tCRP(9)
UCAS
LCAS
tCP(44)
tASR(10)
ROW
A0 ~ A10
COL
tOFF(23)
High-Z
I/O 0 ~ I/O 3
: High or Low
Note: WE, OE = Don't care.
n Self Refresh Mode.
a. Entering the Self Refresh Mode:
The A42U2604 Self Refresh Mode is entered by using CAS before RAS cycle and holding RAS and CAS signal
"low" longer than 100µs.
b. Continuing the Self Refresh Mode:
The Self Refresh Mode is continued by holding RAS "low" after entering the Self Refresh Mode.
It does not depend on CAS being "high" or "low" after entering the Self Refresh Mode continue the Self Refresh Mode.
c. Exiting the Self Refresh Mode:
The A42U2604 exits the Self Refresh Mode when the RAS signal is brought "high".
(September, 2003, Version 1.0)
21
AMIC Technology, Corp.
A42U2604 Series
Capacitance (Ta = Room Temperature, VCC = 2.5V ± 10%)
Symbol
Signals
CIN1
A0 - A10
CIN2
RAS , CAS ,
Parameter
Max.
Unit
Test Conditions
5
pF
Vin = 0V
Input Capacitance
7
pF
Vin = 0V
I/O Capacitance
10
pF
Vin = Vout = 0V
WE , OE
CI/O
I/O0 - I/O3
Ordering Codes
Package RAS Access Time
50ns
60ns
80ns
Refresh
Cycle
SelfRefresh
SOJ 24/26L (300mil)
A42U2604S-50
A42U2604S-60
A42U2604S-80
2K
Yes
TSOP 24/26L type II (300mil)
A42U2604V-50
A42U2604V-60
A42U2604V-80
2K
Yes
TSOP 24/26L type II (300mil)
A42U2604V-50U
A42U2604V-60U
A42U2604V-80U
2K
Yes
Note: -U is for industrial operating temperature range.
(September, 2003, Version 1.0)
22
AMIC Technology, Corp.
A42U2604 Series
Package Information
SOJ 24/26L (300mil) Outline Dimensions
unit: inches/mm
18
13
6
7
12
E1
19
1
E
D
24
-yS
b
b2
A
A
A1
A2
C
Pin 1 Identifier
θ
e
Seating Plane
0.004
Symbol
A
E2
y
Dimensions in inches
Dimensions in mm
Min
Nom
Max
Min
Nom
Max
A
-
-
0.140
-
-
3.56
A1
0.070
0.080
0.090
1.78
2.03
2.29
A2
0.095
0.100
0.105
2.41
2.54
2.67
b
0.016
0.018
0.022
0.41
0.46
0.56
b2
0.026
0.028
0.032
0.66
0.71
0.81
C
0.008
0.010
0.014
0.20
0.25
0.36
D
-
0.675
0.686
-
17.15
17.42
E
0.327
0.337
0.347
8.31
8.56
8.81
E1
0.295
0.300
0.305
7.49
7.62
7.75
E2
e
0.245
0.265
0.285
6.22
6.73
7.24
0.044
0.050
0.056
1.12
1.27
1.42
S
-
-
0.048
-
-
1.22
θ
0°
-
10°
0°
-
10°
Notes:
1. The maximum value of dimension D includes end flash.
2. Dimension E1 does not include resin fins.
3. Dimension E2 is for PC Board surface mount pad pitch design
reference only.
4. Dimension S includes end flash.
(September, 2003, Version 1.0)
23
AMIC Technology, Corp.
A42U2604 Series
Package Information
TSOP 24/26L (TYPE II) (300mil) Outline Dimensions
13
E
HE
0.010
24
unit: inches/mm
L1
1
θ
12
B
A
A1
e
S
D
A2
c
D
y
L1
Dimensions in inches
Symbol
Min
Nom
Max
L
Dimensions in mm
Min
Nom
Max
A
-
-
0.047
-
-
1.20
A1
0.002
-
-
0.05
-
-
A2
0.037
0.039
0.041
0.95
1.00
1.05
B
0.012
0.016
0.020
0.30
0.40
0.50
c
-
0.005
-
-
0.127
-
D
0.671
0.675
0.679
17.04
17.14
17.24
E
0.298
0.300
0.302
7.57
7.62
7.67
e
-
0.050
-
-
1.27
-
HE
0.355
0.363
0.371
9.02
9.22
9.42
L
-
0.031
-
-
0.80
-
L1
0.016
0.020
0.024
0.40
0.50
0.60
S
-
0.037
-
-
0.95
-
y
-
-
0.004
-
-
0.10
0°
-
0°
-
5°
θ
5°
Notes:
1. Dimension D&E do not included interlead flash.
2. Dimension B does not included dambar protrusion / intrusion.
3. Dimension S includes end flash.
(September, 2003, Version 1.0)
24
AMIC Technology, Corp.