Datasheet - STMicroelectronics

STFILED625, STPLED625
N-channel 620 V, 1.28 Ω typ., 5.0 A Power MOSFET
in I2PAKFP and TO-220 packages
Datasheet − preliminary data
Features
Order codes
STFILED625
TAB
1
2
STPLED625
1
620 V
1.6 Ω
PTOT
ID
)
s
(
ct
25 W
5.0 A
70 W
u
d
o
• Extremely high dv/dt capability
2
r
P
e
TO-220
I²PAKFP
RDS(on)
max
• 100% avalanche tested
3
3
VDS
• Gate charge minimized
• Very low intrinsic capacitance
t
e
l
o
• Improved diode reverse recovery
characteristics
Figure 1. Internal schematic diagram
D(2,TAB)
)
(s
t
c
u
G(1)
d
o
r
bs
• LED lighting applications
Description
These Power MOSFETs boast extremely low onresistance and very good dv/dt capability,
rendering them suitable for buck-boost and
flyback topologies.
P
e
t
e
l
o
s
b
OApplications
• Zener-protected
S(3)
AM01476v1
O
Table 1. Device summary
Order codes
Marking
Package
I2PAKFP (TO-281)
STFILED625
Tube
LED625
STPLED625
March 2013
Packaging
TO-220
DocID024425 Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/15
www.st.com
15
Contents
STFILED625, STPLED625
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
Test circuits
.............................................. 9
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
)
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2/15
DocID024425 Rev 1
STFILED625, STPLED625
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Value
Symbol
Parameter
Unit
I2PAKFP
TO-220
VDS
Drain- source voltage
620
V
VGS
Gate- source voltage
± 30
V
ID
ID
IDM
(2)
PTOT
Drain current (continuous) at TC = 25 °C
5.0(1)
5.0
Drain current (continuous) at TC = 100 °C
3.5(1)
3.5
Drain current (pulsed)
20.0(1)
Total dissipation at TC = 25 °C
70
IAR
Avalanche current, repetitive or notrepetitive (pulse width limited by TJ max)
EAS
Single pulse avalanche energy
(starting TJ = 25 °C, ID = IAR, VDD = 50 V)
dv/dt(3)
Peak diode recovery voltage slope
di/dt(3)
Diode reverse recovery current slope
Insulation withstand voltage (AC)
TJ
Tstg
Operating junction temperature
Storage temperature
)
(s
o
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P
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b
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VISO
25
4.2
e
t
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l
)
s
(
t
c
u
d
20.0
A
A
A
W
A
120
mJ
12
V/ns
400
A/µs
2500
V
- 55 to 150
°C
t
c
u
1. Limited only by maximum temperature allowed
d
o
r
2. Pulse width limited by safe operating area
3. ISD ≤ ID, peak VDS ≤ V(BR)DSS, VDD = 80% V(BR)DSS
P
e
t
e
l
o
O
bs
Symbol
Table 3. Thermal data
Value
Parameter
Rthj-case
Thermal resistance junction-case max
Rthj-amb
Thermal resistance junction-amb max
DocID024425 Rev 1
Unit
I²PAKFP
TO-220
5
1.79
62.50
°C/W
°C/W
3/15
Electrical characteristics
2
STFILED625, STPLED625
Electrical characteristics
(Tcase =25 °C unless otherwise specified)
Table 4. On /off states
Symbol
V(BR)DSS
Parameter
Test conditions
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
IDSS
Zero gate voltage
VDS = 620 V
drain current (VGS = 0) VDS = 620 V, TC=125 °C
IGSS
Gate-body leakage
current (VDS = 0)
Min.
Typ.
Max.
620
V
1
50
µA
µA
±10
µA
4.5
V
1.28
1.6
Ω
Min.
Typ.
Max.
Unit
-
690
52
8.5
-
pF
pF
pF
)
s
(
ct
VGS = ± 20 V; VDS=0
VGS(th)
Gate threshold voltage VDS = VGS, ID = 50 µA
RDS(on)
Static drain-source on
resistance
VGS = 10 V, ID = 2.1 A
e
t
e
ol
Unit
u
d
o
3
3.6
Pr
Table 5. Dynamic
Symbol
COSS eq(1)
e
t
e
ol
bs
O
Qg
Qgs
Qgd
)-
s
(
t
c
u
d
o
s
b
O
Test conditions
Input capacitance
Output capacitance
Reverse transfer
capacitance
Ciss
Coss
Crss
Rg
Parameter
VDS = 50 V, f = 1 MHz,
VGS = 0
Equivalent output
capacitance
VGS = 0, VDS = 0 to 496 V
Gate input resistance
f=1 MHz open drain
-
4
-
Ω
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 496 V, ID = 4.2 A,
VGS = 10 V
(see Figure 18)
-
27
4
16
-
nC
nC
nC
Pr
16.6
pF
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Table 6. Switching times
Symbol
td(on)
tr
td(off)
tf
4/15
Parameter
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Test conditions
VDD = 310 V, ID = 4.2 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 17)
DocID024425 Rev 1
Min.
Typ.
-
12
8
40
21
Max Unit
-
ns
ns
ns
ns
STFILED625, STPLED625
Electrical characteristics
Table 7. Source drain diode
Symbol
ISD
ISDM
(1)
VSD (2)
trr
Qrr
IRRM
trr
Qrr
IRRM
Parameter
Test conditions
Min. Typ. Max
Source-drain current
Source-drain current (pulsed)
Unit
-
4.2
16.8
A
A
1.5
V
Forward on voltage
ISD = 4.2 A, VGS = 0
-
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 4.2 A, di/dt = 100 A/µs
VDD= 60 V
(see Figure 19)
-
290
1900
13
ns
nC
A
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 4.2 A, di/dt = 100 A/µs
VDD= 60 V TJ = 150 °C
(see Figure 19)
-
320
2200
14
ns
nC
A
1. Pulse width limited by safe operating area
)
s
(
ct
u
d
o
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
r
P
e
Table 8. Gate-source Zener diode
Symbol
V(BR)GSO
Parameter
t
e
l
o
Test conditions
Gate-source breakdown
voltage
bs
IGS= ± 1 mA, ID=0
Min.
Typ.
30
-
Max. Unit
-
V
O
)
The built-in back-to-back Zener diodes have been specifically designed to enhance not only
the device’s ESD capability, but also to make them capable of safely absorbing any voltage
transients that may occasionally be applied from gate to source. In this respect, the Zener
voltage is appropriate to achieve efficient and cost-effective protection of device integrity.
The integrated Zener diodes thus eliminate the need for external components.
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DocID024425 Rev 1
5/15
Electrical characteristics
2.1
STFILED625, STPLED625
Electrical characteristics (curves)
Figure 2. Safe operating area for I2PAKFP
Figure 3. Thermal impedance for I2PAKFP
AM08241v1
ID
(A)
Tj=150°C
Tc=25°C
Single pulse
10
n)
100µs
D
S(
o
O
Li per
m at
ite io
d ni
by n
m this
ax a
R rea
is
10µs
1
1ms
)
s
(
ct
10ms
0.1
0.01
0.1
10
1
100
u
d
o
VDS(V)
Figure 4. Safe operating area for TO-220
Tj=150°C
Tc=25°C
Single pulse
10
is
10µs
100µs
on
)
)
(s
D
S(
O
Li per
m at
ite io
d ni
by n
m this
ax a
R rea
1
0.01
0.1
t
c
u
10ms
d
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l
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s
b
O
1ms
0.1
1
10
100
VDS(V)
Figure 6. Output characteristics
O
t
e
l
o
AM08239v1
ID
(A)
bs
r
P
e
Figure 5. Thermal impedance TO-220
Figure 7. Transfer characteristics
AM08243v1
ID
(A)
10
VGS=10V
7V
8
6
4
3
4
6V
2
6/15
VDS=15V
5
6
0
0
AM08244v1
ID
(A)
7
2
1
5
10
15
20
25
5V
VDS(V)
DocID024425 Rev 1
0
0
2
4
6
8
VGS(V)
STFILED625, STPLED625
Electrical characteristics
Figure 8. Gate charge vs gate-source voltage
AM08245v1
VGS
(V)
VDS
12
Figure 9. Static drain-source on-resistance
VGS
VDD=496V
ID=4.2A
AM08246v1
RDS(on) (Ω)
VGS=10V
1.38
500
1.36
10
400
1.34
8
1.32
300
1.30
6
200
1.28
4
1.26
100
2
)
s
(
ct
1.24
0
0
10
5
15
20
0
30 Qg(nC)
25
Figure 10. Capacitance variations
1.22
1.0
3.0
u
d
o
4.0
ID(A)
Figure 11. Output capacitance stored energy
AM08247v1
C
(pF)
2.0
Eoss
(µJ)
e
t
e
ol
Pr
AM08248v1
4
1000
Ciss
O
)
100
s
(
t
c
10
1
0.1
u
d
o
1
r
P
e
100
10
t
e
l
o
O
2
1
Crss
0
0
VDS(V)
AM08249v1
(norm)
bs
3
Coss
Figure 12. Normalized gate threshold voltage vs
temperature
VGS(th)
bs
100
200
300
400
500
VDS(V)
Figure 13. Normalized on-resistance vs
temperature
AM08250v1
RDS(on)
(norm)
1.10
2.5
1.00
2.0
1.5
0.90
1.0
0.80
0.5
0.70
-75
-25
25
75
125
TJ(°C)
DocID024425 Rev 1
0
-75
-25
25
75
125
TJ(°C)
7/15
Electrical characteristics
STFILED625, STPLED625
Figure 14. Source-drain diode forward
characteristics
Figure 15. Normalized BVDSS vs temperature
AM08597v1
VSD
(V)
AM08596v1
BVDSS
(norm)
TJ=-50°C
1.0
1.10
0.9
1.05
0.8
TJ=25°C
0.7
1.00
TJ=150°C
0.6
)
s
(
ct
0.95
0.5
0.4
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
0.90
-75
ISD(A)
Figure 16. Maximum avalanche energy vs
starting Tj
e
t
e
ol
AM08598v1
EAS (mJ)
130
120
110
100
90
80
70
60
50
40
30
20
10
0
0
ID=4.2 A
VDD=50 V
)
(s
s
b
O
t
c
u
P
e
d
o
r
20
t
e
l
o
40
60
80 100 120 140 TJ(°C)
s
b
O
8/15
DocID024425 Rev 1
-25
25
du
75
o
r
P
125
TJ(°C)
STFILED625, STPLED625
3
Test circuits
Test circuits
Figure 17. Switching times test circuit for
resistive load
Figure 18. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
μF
2200
RL
μF
IG=CONST
VDD
VGS
100Ω
Vi=20V=VGMAX
VD
RG
2200
μF
D.U.T.
VG
c
u
d
47kΩ
1kΩ
AM01468v1
e
t
e
ol
Figure 19. Test circuit for inductive load
switching and diode recovery times
A
A
G
D.U.T.
FAST
DIODE
B
B
S
s
(
t
c
3.3
μF
B
25 Ω
D
1000
μF
s
b
O
RG
S
r
P
e
2200
μF
3.3
μF
VDD
ID
Vi
D.U.T.
Pw
let
AM01470v1
AM01471v1
Figure 21. Unclamped inductive waveform
b
O
AM01469v1
L
VD
VDD
u
d
o
G
so
)-
L=100μH
o
r
P
Figure 20. Unclamped inductive load test circuit
A
D
)
s
(
t
2.7kΩ
PW
PW
D.U.T.
Figure 22. Switching time waveform
ton
V(BR)DSS
tdon
VD
toff
tr
tdoff
tf
90%
90%
IDM
10%
ID
VDD
10%
0
VDD
VDS
90%
VGS
AM01472v1
0
DocID024425 Rev 1
10%
AM01473v1
9/15
Package mechanical data
4
STFILED625, STPLED625
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
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DocID024425 Rev 1
STFILED625, STPLED625
Package mechanical data
Table 9. I2PAKFP (TO-281) mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.40
4.60
B
2.50
2.70
D
2.50
2.75
D1
0.65
0.85
E
0.45
0.70
F
0.75
1.00
)
s
(
ct
F1
1.20
G
4.95
H
10.00
L1
21.00
L2
13.20
L3
10.55
L4
2.70
L5
0.85
L6
7.30
du
5.20
-
ete
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P
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)-
s
b
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10.40
23.00
14.10
10.85
3.20
1.25
7.50
s
(
t
c
Figure 23. I2PAKFP (TO-281) drawing
u
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UHY$
DocID024425 Rev 1
11/15
Package mechanical data
STFILED625, STPLED625
Table 10. TO-220 type A mechanical data
mm
Dim.
Min.
Typ.
A
4.40
4.60
b
0.61
0.88
b1
1.14
1.70
c
0.48
0.70
D
15.25
15.75
D1
E
10
e
2.40
e1
4.95
F
1.23
H1
6.20
J1
2.40
L
13
L1
3.50
L30
10.40
du
2.70
3.75
du
Q
ete
ol
)-
s
b
O
s
(
t
c
∅P
2.65
o
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P
s
b
O
12/15
)
s
(
ct
1.27
L20
e
t
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ol
Max.
DocID024425 Rev 1
o
r
P
5.15
1.32
6.60
2.72
14
3.93
16.40
28.90
3.85
2.95
STFILED625, STPLED625
Package mechanical data
Figure 24. TO-220 type A drawing
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0015988_typeA_Rev_S
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DocID024425 Rev 1
13/15
Revision history
5
STFILED625, STPLED625
Revision history
Table 11. Document revision history
Date
Revision
25-Mar-2013
1
Changes
First release.
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DocID024425 Rev 1
STFILED625, STPLED625
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Please Read Carefully:
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Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
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Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
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or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
)
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UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
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ST PRODUCTS ARE NOT AUTHORIZED FOR USE IN WEAPONS. NOR ARE ST PRODUCTS DESIGNED OR AUTHORIZED FOR USE
IN: (A) SAFETY CRITICAL APPLICATIONS SUCH AS LIFE SUPPORTING, ACTIVE IMPLANTED DEVICES OR SYSTEMS WITH
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CORRESPONDING GOVERNMENTAL AGENCY.
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Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
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DocID024425 Rev 1
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