SECURITY CODE Spec. NAME Customer’s Std. Spec. Prepared by Checked by Approved by DATE MITSUBISHI ELECTRIC CORPORATION K.Kurachi A K.Kurachiv R E I.Umezaki I.Umezaki V 11-May-2007 4-Feb.-2008 HIGH VOLTAGE DIODE MODULE 1. Type Number RM300DG-90S 2. Structure Flat base type (Insulated package, AlSiC base plate) 3. Application & Customer High power converters & Inverters for traction application 4. Outline See Fig. 1 5. Related Specifications Fig. 1 - Outline drawing HIGH VOLTAGE DIODE MODULE HVM-2011-A (HV-SETSU) PAGE 1 / 11 MITSUBISHI ELECTRIC CORPORATION 6. Maximum Ratings Item Symbol Conditions Ratings Unit 6.1 Repetitive peak reverse voltage VRRM Tj = 25 °C 4500 V 6.2 Non-repetitive peak reverse voltage VRSM Tj = 25 °C 4500 V 6.3 Reverse DC voltage VR(DC) Tj = 25 °C 3000 V 6.4 DC forward current IF Tc = 25 °C 300 A 6.5 Surge forward current IFSM Tj = 25 °C start, tw = 8.3 ms Half sign wave 2400 A 6.6 Surge current load integral I2t Tj = 25 °C start, tw = 8.3 ms Half sign wave 24 6.7 Isolation voltage Viso Charged part to the baseplate RMS sinusoidal, 60Hz 1min. 6.8 Junction temperature Tj — −40 ~ +150 °C 6.9 Storage temperature Tstg — −40 ~ +125 °C Top — −40 ~ +125 °C 6.10 Operating temperature 6.11 Maximum reverse recovery instantaneous power 7. V 800 kW [See Fig.1, Fig.2, 12-5] Electrical Characteristics Item 7.1 10200 VR ≤ 3200 V di/dt ≤ 1100A/µs, Tj = 125 °C — kA2s Repetitive reverse current Symbol IRRM VRM = VRRM (Note 1) 7.2 Forward voltage VFM 7.3 Reverse recovery time trr 7.4 Reverse recovery current Irr 7.5 Reverse recovery charge Qrr 7.6 Reverse recovery energy Erec Limits Conditions IF = 300 A Unit Min. Typ. Max. Tj = 25 °C — — — — 0.5 4.80 1 10 — Tj = 125 °C — 4.15 — — 1.0 — µs — 280 — A — 250 — µC — 0.33 — J/P Tj = 25 °C Tj = 125 °C VR = 2250 V, IF = 300 A di/dt = −800 A/µs Tj = 125 °C [See Fig.1,Fig.2] mA V Note 1: It doesn't include the voltage drop by Internal lead resistance. HIGH VOLTAGE DIODE MODULE HVM-2011-A (HV-SETSU) PAGE 2 / 11 MITSUBISHI ELECTRIC CORPORATION 8. Thermal Characteristics Item 8.1 Symbol Thermal resistance Rth(j-c)R Limits Conditions Junction to case (per 1/2 module) Unit Min. Typ. Max. — — 66.0 K/kW — 48.0 — K/kW (Note 2) 8.2 Contact thermal resistance Case to fin Conductive grease applied (per 1/2 module) Rth(c-f) Note 2: Thermal conductivity is 1W/mK with a thickness of 100µm. 9. Mechanical Characteristics Item Symbol Conditions Limits Min. Typ. Max. Unit 9.1 Mounting torque — Main terminal screw : M8 7.0 — 15.0 N·m 9.2 Mounting torque — Mounting screw : M6 3.0 — 6.0 N·m 9.3 Mass — — — 1.0 — kg 9.4 Comparative tracking index CTI — 600 — — — 9.5 Clearance — — 26 — — mm 9.6 Creepage distance — — 56 — — mm 9.7 Internal inductance LA-K(int) — 9.8 Internal lead resistance RA-K(int) Tc = 25 °C — 44 — nH — 0.27 — mΩ 10. Shipping Inspection Report Item (note 3) Static characteristics : IRRM [7.1], VFM [7.2] Dynamic characteristics : trr [7.3], Qrr [7.5] Note 3: One shipping inspection report with the above item values is submitted when modules are delivered. The test conditions are defined in bracket. HIGH VOLTAGE DIODE MODULE HVM-2011-A (HV-SETSU) PAGE 3 / 11 MITSUBISHI ELECTRIC CORPORATION 11. Test Circuit & Definition of Switching Characteristics LS1 = 500 nH Rg LLOAD LS2 = 100 nH K C = 2 mF V CC DUT: diode CS = 200 uF A Fig. 1 – Switching test circuit Diode part: reverse recovery Qrr = – IF di/dt ∫ t6 VR trr di 0 Irr 10%IF Erec = – ∫ if dt 0 t6 if•vr dt t5 50%Irr dt 90%Irr 0 10%VR 0 t5 t6 Fig. 2 – Definitions of reverse recovery charge & energy HIGH VOLTAGE DIODE MODULE HVM-2011-A (HV-SETSU) PAGE 4 / 11 MITSUBISHI ELECTRIC CORPORATION 12. Performance curves 12-1 Forward characteristics................................................................................................... 6 12-2 Reverse recovery energy characteristics ...................................................................... 7 12-3 Reverse recovery current characteristics...................................................................... 8 12-4 Transient thermal impedance characteristics ............................................................... 9 12-5 Reverse recovery safe operating area ......................................................................... 10 HIGH VOLTAGE DIODE MODULE HVM-2011-A (HV-SETSU) PAGE 5 / 11 MITSUBISHI ELECTRIC CORPORATION 12-1 Forward characteristics 600 500 Tj=125°C Tj=25°C Forward current IF [A] 400 300 200 100 0 0 1 2 3 4 5 6 7 8 Forward voltage VFM [V] Forward voltage characteristics (typical) HIGH VOLTAGE DIODE MODULE HVM-2011-A (HV-SETSU) PAGE 6 / 11 MITSUBISHI ELECTRIC CORPORATION 12-2 Reverse recovery energy characteristics 0.7 Tj = 125°C, VR = 2250V Ls = 100nH, Inductive load Integration range: 10%VR ~10%IF 0.6 Reverse recovery energy Erec [J/P] 0.5 0.4 0.3 0.2 0.1 0.0 0 100 200 300 Forward current 400 500 600 700 IF [A] Reverse recovery energy characteristics (typical) HIGH VOLTAGE DIODE MODULE HVM-2011-A (HV-SETSU) PAGE 7 / 11 MITSUBISHI ELECTRIC CORPORATION 12-3 Reverse recovery current characteristics 500 Tj = 125°C, VR = 2250V Ls = 100nH, Inductive load Reverse recovery current Irr [A] 400 300 200 100 0 0 100 200 300 Forward current 400 500 600 700 IF [A] Reverse recovery current characteristics (typical) HIGH VOLTAGE DIODE MODULE HVM-2011-A (HV-SETSU) PAGE 8 / 11 MITSUBISHI ELECTRIC CORPORATION 12-4 Transient thermal impedance characteristics 1.2 Rth(j-c) = 66 K/kW Normalized transient thermal impedance 1.0 0.8 0.6 0.4 0.2 0.0 0.001 0.01 0.1 1 10 Time [sec.] Transient thermal impedance characteristics HIGH VOLTAGE DIODE MODULE HVM-2011-A (HV-SETSU) PAGE 9 / 11 MITSUBISHI ELECTRIC CORPORATION 12-5 Reverse recovery safe operating area 800 Tj = 125°C, VR ≤ 3200 V di/dt ≤ 1100A/µs 700 Reverse recovery current Irr [A] 600 500 400 300 200 100 0 0 1000 2000 3000 4000 5000 Reverse voltage VR [V] Reverse recovery safe operating area (RRSOA) HIGH VOLTAGE DIODE MODULE HVM-2011-A (HV-SETSU) PAGE 10 / 11 MITSUBISHI ELECTRIC CORPORATION Rev. No. − Signature & date K.Kurachi 31-Jan.-2008 Summary of changes Original HIGH VOLTAGE DIODE MODULE HVM-2011-A (HV-SETSU) PAGE 11 / 11