QID3350001 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Dual IGBT HVIGBT Module 500 Amperes/3300 Volts A C D Q F (4 PLACES) D E G E1 C2 J T B Description: Powerex HVIGBTs feature highly insulating housings that offer enhanced protection by means of greater creepage and strike clearance distance for many demanding applications like medium voltage drives and auxiliary traction applications. E2 C1 U H V E2 (C1) E1 L (5 PLACES) R S C2 G2 G1 K (4 PLACES) M G N W P X C2 E1 C2 E1 G1 G2 E2 E2 C1 Outline Drawing and Circuit Diagram Dimensions Inches Millimeters Dimensions Inches Millimeters A 5.11 130.0 M 0.51 13.0 B 5.51 140.0 N 1.57 39.9 C 4.49 114.0 P 1.71 43.4 D 2.24 57.0 Q 1.49 38.0 61.5 R 0.20 5.0 M8 Metric S 1.10 28.0 E 2.42 F M8 G 0.71 18.0 T 1.72 43.8 H 4.88 124.0 U 1.86 47.2 J 1.57 40.0 V 2.39 60.6 K 0.27 7.0 Dia. W 0.65 16.5 L M4 M4 Metric X 1.85 47.0 Features: -55 to 150°C Extended Temperature Range 100% Dynamic Tested 100% Partial Discharge Tested Advanced Mitsubishi R-Series Chip Technology AlSiC Baseplate Aluminum Nitride (AlN) Ceramic Substrate for Low Thermal Impedance Complementary Line-up in Expanding Current Ranges to Mitsubishi HVIGBT Power Modules Rugged SWSOA and RRSOA Applications: High Voltage Power Supplies Medium Voltage Drives Motor Drives Traction Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product. 11/14 Rev. 7 1 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QID3350001 Dual IGBT HVIGBT Module 500 Amperes/3300 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings SymbolQID3350001 Units Collector-Emitter Voltage (VGE = 0V, Tj = -40 to +150°C) VCES3300 Volts Collector-Emitter Voltage (VGE = 0V, Tj = -50°C) VCES3200 Volts Junction Temperature Tj -50 to 150 °C Operating Junction Temperature Tjop -50 to 150 °C Storage Temperature Tstg -55 to 150 °C Gate-Emitter Voltage (VCE = 0V) VGES±20 Volts Collector Current (TC = 92°C) IC ICM1000*1Amperes Peak Collector Current (Pulse) Diode Forward Current*2IF Diode Forward Surge Current 500Amperes 500Amperes (Pulse)*2I *1 FM1000 Amperes Maximum Collector Dissipation (TC = 25°C, IGBT Part, Tj(max) ≤1 50°C) PC 4500Watts Mounting Torque, M4/M8 Terminal Screws — 2/15 N·m Mounting Torque, M6 Mounting Screws — 6 N·m — 900 Grams Module Weight (Typical) Isolation Voltage (Charged Part to Baseplate, AC 60Hz 1 min.) Viso 6kVolts Partial Discharge Qpd10 pC (V1 = 3500 Vrms, V2 = 2600 Vrms, f = 60Hz (Acc. to IEC 1287)) Maximum Short-Circuit Pulse Width, tpsc10 µs (VCC ≤ 2600V, VCE ≤ VCES, VGE = +15V/-8V, Tj = 150°C) Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES VCE = VCES, VGE = 0V, Tj = 25°C — — 2.0 mA VCE = VCES, VGE = 0V, Tj = 125°C — 10 20 mA Gate Leakage Current IGES VGE = VGES, VCE = 0V — — 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 40mA, VCE = 10V 5.7 6.2 6.7 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 500A, VGE = 15V, Tj = 25°C — 2.7*3 2.85 Volts IC = 500A, VGE = 15V, Tj = 125°C — 3.1 3.60 Volts IC = 500A, VGE = 15V, Tj = 150°C — 3.6 — Volts Total Gate Charge QG VCC = 1800V, IC = 500A, VGE = 15V — 4.4 — µC Emitter-Collector Voltage*2 VEC IE = 500A, VGE = 0V, Tj = 25°C — 2.4 3.0 Volts IE = 500A, VGE = 0V, Tj = 125°C — 2.5 3.2 Volts IE = 500A, VGE = 0V, Tj = 150°C — 2.4 — Volts *1 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. *2 Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). *3 Pulse width and repetition rate should be such that device junction temperature rise is negligible. Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product. 2 11/14 Rev. 7 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QID3350001 Dual IGBT HVIGBT Module 500 Amperes/3300 Volts Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Max. Units —58 Typ. — nF — 3.6 — nF —1.6 — nF Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Turn-on Delay Time td(on) VCC = 1800V, IC = 500A, tr VGE = ±15V, td(off) RG(on) = 5.8Ω, RG(off) = 20Ω, — 3.0 — µs tf LS = 100nH, Inductive Load — 0.33 — µs Turn-on Switching Energy Eon (10%) Tj = 125°C, IC = 500A, VGE = ±15V, Turn-off Switching Energy Eoff (10%) RG(on) = 5.8Ω, RG(off) = 20Ω, Rise Time Turn-off Delay Time Fall Time VGE = 0V, VCE = 10V — 1.1 —0.31 — µs — µs —760 — mJ/P — 680 — mJ/P — 700 — ns VCC = 1800V, LS = 100nH, Inductive Load Diode Reverse Recovery Time*2 Diode Reverse Recovery Charge*2 Diode Reverse Recovery Energy trr VCC = 1800V, IE = 500A, Qrr VGE = ±15V, RG(on) = 5.8Ω, — 470*1 — µC Erec (10%) LS = 100nH, Inductive Load, Tj = 125°C — 485 — mJ/P Stray Inductance LSCE —25 — nH Lead Resistance Terminal-Chip RCE — TBD — mΩ Test Conditions Min. Typ. Max. Units Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Case*4 Rth(j-c) Q Per IGBT — — 0.0275 °C/W Thermal Resistance, Junction to Case*4 Rth(j-c) D Per FWDi — — 0.052 °C/W Per Module, — 0.008 — °C/W Thermal Resistance, Junction to Contact Thermal Resistance, Case to Fin Rth(c-f) Thermal Grease Applied, λgrease = 1W/mK *1 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. *2 Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). *4 TC measurement point is just under the chips. Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product. 11/14 Rev. 7 3 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QID3350001 Dual IGBT HVIGBT Module 500 Amperes/3300 Volts COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 750 Tj = 150°C VGE = 19V 625 15 11 500 375 250 9 125 0 0 1 2 3 VGE = 15V Tj = 25°C Tj = 150°C 13 COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 750 4 5 625 500 375 250 125 0 6 0 3 4 5 750 750 VCE = VGE Tj = 25°C Tj = 150°C 625 EMITTER CURRENT, IE, (AMPERES) COLLECTOR-CURRENT, IC, (AMPERES) 2 FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) 500 375 250 125 0 1 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 0 2 4 6 8 10 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 12 625 500 375 250 125 0 Tj = 25°C Tj = 150°C 0 1 2 3 4 5 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product. 4 11/14 Rev. 7 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QID3350001 Dual IGBT HVIGBT Module 500 Amperes/3300 Volts CAPACITANCE VS. VCE (TYPICAL) GATE CHARGE VS. VGE Cies 25 Coes 2.5 VGE = 0V Tj = 25°C f = 100 kHz 0.25 10-1 SWITCHING ENERGIES, Eon, Eoff, Erec, (mJ/PULSE) GATE-EMITTER VOLTAGE, VGE, (VOLTS) 20 2500 100 2000 1750 1500 1250 101 -5 -10 0 1.25 2.5 3.75 HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) Eon Eoff Erec 250 0 0 SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 500 0 5 GATE CHARGE, QG, (μC) 1000 750 10 -15 102 VCE = 1800V IC = 500A Tj = 25°C 15 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) VCC = 1800V VGE = +15V/-8V RG(on) = 5.8Ω RG(off) = 20Ω Ls = 100nH Tj = 125°C Inductive Load 2250 Cres 125 250 375 500 625 750 875 COLLECTOR CURRENT, IC, (AMPERES) SWITCHING ENERGIES, Eon, Eoff, Erec, (mJ/PULSE) CAPACITANCE, Cies, Coes, Cres, (nF) 250 2750 2500 VCC = 1800V VGE = +15V/-8V RG(on) = 5.8Ω RG(off) = 20Ω Ls = 100nH Tj = 125°C Inductive Load 2250 2000 1750 1500 1250 5.0 Eon Eoff 1000 Erec 750 500 250 0 0 125 250 375 500 625 750 875 COLLECTOR CURRENT, IC, (AMPERES) Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product. 11/14 Rev. 7 5 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QID3350001 Dual IGBT HVIGBT Module 500 Amperes/3300 Volts FREE-WHEEL DIODE REVERSE RECOVERY SAFE OPERATING AREA (TYPICAL) REVERSE BIAS SAFE OPERATING AREA (TYPICAL) REVERSE RECOVERY CURRENT, Irr, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 1250 1000 750 500 VCC ≤ 2500V VGE = +15V/-8V RG(off) = 20Ω Tj = 150°C 250 0 0 1000 2000 3000 4000 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Zth = Rth • (NORMALIZED VALUE) COLLECTOR EMITTER VOLTAGE, VCES, (VOLTS) 1250 1000 750 500 VCC ≤ 2500V di/dt = 1kA/µs Tj = 150°C 250 0 0 1000 2000 3000 4000 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 1.2 1.0 0.8 0.6 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.0275°C/W (IGBT) Rth(j-c) = 0.052°C/W (FWDi) 0.4 0.2 0 10-3 10-2 10-1 100 101 TIME, (s) Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product. 6 11/14 Rev. 7