QIC6508001 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Dual Common Emitter HVIGBT Module 85 Amperes/6500 Volts S NUTS (3TYP) A D F J (2TYP) C N 7 8 F H 1 2 M 5 6 B E 3 4 H V (4TYP) G (3TYP) R (DEEP) K (3TYP) T (SCREWING DEPTH) L (2TYP) Description: Powerex HVIGBTs feature highly insulating housings that offer enhanced protection by means of greater creepage and strike clearance distance for many demanding applications like medium voltage drives and auxiliary traction applications. U (5TYP) P Q 1 (NC) 4 5 6 2 7 8 3 Outline Drawing and Circuit Diagram DimensionsInches Millimeters DimensionsInches Millimeters A 5.51 140.0 L B 2.87 73.0 M 0.38 9.75 C 1.89 48.0 N 0.20 5.0 0.69±0.01 17.5±0.25 D 4.88±0.01124.0±0.25 P 0.22 5.5 E 2.24±0.01 57.0±0.25 Q 1.44 36.5 F 1.18 30.0 R 0.43 11.0 H 1.07 27.15 J 0.20 5.0 K 1.65 42.0 V G S 0.16 4.0 M6 Metric M6 T 0.63 Min. 16.0 Min. U 0.11 x 0.02 2.8 x 0.5 0.28 Dia. 7.0 Dia. Features: -40 to 150°C Extended Temperature Range 100% Dynamic Tested 100% Partial Discharge Tested Advanced Mitsubishi R-Series Chip Technology Aluminum Nitride (AlN) Ceramic Substrate for Low Thermal Impedance Complementary Line-up in Expanding Current Ranges to Mitsubishi HVIGBT Power Modules Copper Baseplate Creepage and Clearance Meet IEC 60077-1 Rugged SWSOA and RRSOA Applications: High Voltage Power Supplies Medium Voltage Drives Motor Drives Traction Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product. 11/14 Rev. 3 1 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QIC6508001 Dual Common Emitter HVIGBT Module 85 Amperes/6500 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol Junction Temperature QIC6508001Units Tj -40 to +150 Tstg -40 to +125 °C VCES Tj = -40°C 5800 Volts Tj = +25°C 6300 Volts Tj = +125°C 6500 Volts Gate-Emitter Voltage (VCE = 0V) ±20Volts Storage Temperature Collector-Emitter Voltage (VGE = 0V) VGES Collector Current (TC = 110°C) IC °C 85Amperes ICM170*2Amperes Peak Collector Current (Pulse) *1 Diode Forward Current (TC = 102°C) IF 85Amperes *1 Diode Forward Surge Current (Pulse) IFM170*2Amperes Maximum Collector Dissipation PC 1100Watts (TC = 25°C, IGBT Part, Tj(max) ≤ 150°C) Mounting Torque, M6 Terminal Screws — 44 in-lb Mounting Torque, M6 Mounting Screws — 44 in-lb Module Weight (Typical) — 900 Grams Isolation Voltage (Charged Part to Baseplate, AC 60Hz 1 min.) Viso 9.0kVolts Partial Discharge Qpd 10pC tpsc 10µs (V1 = 6900 VRMS, V2 = 5200 VRMS, f = 60Hz (Acc. to IEC 1287)) Maximum Short-Circuit Pulse Width, (VCC ≤ 4500V, VGE = ±15V, Tj = 125°C) Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Collector-Cutoff Current Test Conditions ICESVCE = VCES, VGE = 0V, Tj = 25°C Min. Typ. Max. Units — — 3 mA VCE = VCES, VGE = 0V, Tj = 125°C — 3 — mA Gate Leakage Current IGESVGE = VGES, VCE = 0V — — 0.5 µA Gate-Emitter Threshold Voltage VGE(th)IC = 13mA, VCE = 10V 5.8 6.3 6.8 Volts Collector-Emitter Saturation Voltage VCE(sat)IC = 85A, VGE = 15V, Tj = 25°C — 3.8*3—Volts IC = 85A, VGE = 15V, Tj = 125°C — 4.8 5.6 Volts Total Gate Charge — 1.05 — µC QGVCC = 3600V, IC = 85A, VGE = 15V *1 Emitter-Collector Voltage VECIE = 85A, VGE = 0V, Tj = 25°C — 3.3 — Volts IE = 85A, VGE = 0V, Tj = 125°C — 3.4 4.2 Volts *1 Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). *2 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. *3 Pulse width and repetition rate should be such that device junction temperature rise is negligible. Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product. 2 11/14 Rev. 3 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QIC6508001 Dual Common Emitter HVIGBT Module 85 Amperes/6500 Volts Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Input Capacitance Cies Output Capacitance CoesVGE = 0V, VCE = 10V — 0.95 — nF Reverse Transfer Capacitance Cres — 0.44 — nF Resistive Turn-on Delay Time td(on)VCC = 3600V, IC = 85A, Load Rise Time Switching Turn-off Delay Time Times Fall Time f = 100kHz trVGE = ±15V, td(off)RG(on) = 30Ω, RG(off) = 300Ω, tf Inductive Load —15—nF — TBD — µs — TBD — µs — TBD — µs —TBD— µs Turn-on Switching Energy EonTj = 125°C, IC = 85A, VGE = ±15V, — 460 — mJ Turn-off Switching Energy EoffRG(on) = 30Ω, RG(off) = 300Ω, — 500 — mJ — 0.7 — µs Diode Reverse Recovery Charge QrrVGE = ±15V, RG(on) = 30Ω, — *3 100 — µC Diode Reverse Recovery Energy Erec — 200 Stray Inductance (C1-E2) LSCE —60—nH Lead Resistance Terminal-Chip RCE —0.8—mΩ VCC = 3600V, Inductive Load Diode Reverse Recovery Time*1trrVCC = 3600V, IE = 85A, *1 Inductive Load, Tj = 125°C — mJ Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Thermal Resistance, Junction to Case*4Rth(j-c) Q Thermal Resistance, Junction to Case*4Rth(j-c) D Contact Thermal Resistance, Case to Fin Rth(c-f) Comparative Tracking Index Clearance Distance in Air Min. Typ. Max. Units Per IGBT —0.100—°C/W Per FWDi —0.175—°C/W Per Module, —0.018—°C/W Thermal Grease Applied, λgrease = 1W/mK CTI 600 — — da(t-t) 19 — —mm ds(t-t) 54 — —mm (Terminal to Terminal) Creepage Distance Along Surface (Terminal to Terminal) *1 Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). *3 Pulse width and repetition rate should be such that device junction temperature rise is negligible. *4 TC measurement point is just under the chips. Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product. 11/14 Rev. 3 3 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QIC6508001 Dual Common Emitter HVIGBT Module 85 Amperes/6500 Volts OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) 150 150 VGE = 15V 125 13 COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) Tj = 125°C 11 100 10 75 50 25 0 0 2 4 6 100 75 50 25 0 4 8 16 12 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS TYPICAL) 150 150 VGE = 15V Tj = 25°C Tj = 125°C 125 EMITTER CURRENT, IE, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 125 0 8 VCE = VGE Tj = 25°C Tj = 125°C 100 75 50 25 0 0 2 4 6 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)) 8 Tj = 25°C Tj = 125°C 125 100 75 50 25 0 0 1 2 3 4 5 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product. 4 11/14 Rev. 3 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QIC6508001 Dual Common Emitter HVIGBT Module 85 Amperes/6500 Volts GATE CHARGE CHARACTERISTICS (TYPICAL) CAPACITANCE CHARACTERISTICS (TYPICAL) 20 10 1.0 Coes VGE = 0V Tj = 25°C f = 100kHz 0.1 0.1 Cres 10 1.0 10 5 0 -5 -10 0 0.2 0.4 0.6 0.8 1.0 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) GATE CHARGE, QG, (μC) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) VCC = 3600V, VGE = ±15V, RG(on) = 30Ω, RG(off) = 300Ω, LS = 150nH, Tj = 125°C Inductive Load 1.2 1.0 Eon Eoff Erec 0.8 0.6 0.4 0.2 0 15 -15 100 VCE = 3600V IC = 85A Tj = 25°C 1.2 1.2 1.4 SWITCHING ENERGIES, Eon, Eoff, Erec, (J) GATE EMITTER VOLTAGE, VGE, (VOLTS) Cies SWITCHING ENERGIES, Eon, Erec, (J) CAPACITANCE, Cies, Coes, Cres, (nF) 100 0 25 50 75 100 125 COLLECTOR CURRENT, IC, (AMPERES) 150 VCC = 3600V, IC = 85A, VGE = ±15V, LS = 150nH, Tj = 125°C, Inductive Load 1.0 Eon Erec 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 GATE RESISTOR, RG, (Ohm) Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product. 11/14 Rev. 3 5 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QIC6508001 Dual Common Emitter HVIGBT Module 85 Amperes/6500 Volts HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) SWITCHING TIMES, (μs) 1.0 Eoff 0.8 0.6 0.4 VCC = 3600V, VGE = ±15V, RG(on) = 30Ω, RG(off) = 300Ω, LS = 150nH, Tj = 125°C, Inductive Load 10 TBD 1 0.1 0.2 0 100 200 300 400 10 100 1000 GATE RESISTOR, RG, (Ohm) COLLECTOR CURRENT, IC, (AMPERES) FREE-WHEEL DIODE REVERSE RECOVERY (TYPICAL) REVERSE BIAS SAFE OPERATING AREA (RBSOA) 100 1000 trr Irr 100 10 10 1 VCC = 3600V, VGE = ±15V, RG(on) = 30Ω, LS = 150nH, Tj = 125°C, Inductive Load 0.1 0.01 500 10 100 EMITTER CURRENT, IE, (AMPERES) 1.0 1000 275 COLLECTOR CURRENT, IC, (AMPERES) 0 REVERSE RECOVERY TIME, trr, (μs) 100 VCC = 3600V, IC = 85A, VGE = ±15V, LS = 150nH, Tj = 125°C, Inductive Load REVERSE RECOVERY CURRENT, Irr, (AMPERES) SWITCHING ENERGIES, Eoff, (J) 1.2 VCC ≤ 4500V, VGE = ±15V, RG(off) = 300Ω, Tj = 125°C 220 170 110 55 0 0 2000 4000 6000 8000 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product. 6 11/14 Rev. 3 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com REVERSE RECOVERY CURRENT, Irr, (AMPERES) FREE-WHEEL DIODE REVERSE RECOVERY SAFE OPERATING AREA (RRSOA) 275 VCC ≤ 4500V, di/dt < 500A/μs, Tj = 125°C 220 170 110 55 0 0 2000 4000 6000 8000 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') QIC6508001 Dual Common Emitter HVIGBT Module 85 Amperes/6500 Volts TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 1.2 1.0 0.8 0.6 Per Unit Base = Rth(j-c) = 0.100 °C/W (IGBT) Rth(j-c) = 0.175 °C//W (FWDi) 0.4 0.2 0 0.001 0.01 0.1 1.0 10 TIME, (s) Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product. 11/14 Rev. 3 7