BL GALAXY ELECTRICAL 1N4151 REVERSE VOLTAGE : 50 V CURRENT: 0.15 A SMALL SIGNAL SWITCHING DIODE FEATURES Silicon epitaxial planar diode DO-35(GLASS) High speed switching diode 500 mW power dissipation MECHANICAL DATA Case: DO-35,glass case Polarity: Color band denotes cathode Weight: 0.004 ounces, 0.13 grams Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at ２５ ambient temperature unless otherwise specified. MAXIMUM RATINGS Reverse voltage Peak reverse voltage Average forw ard rectified current half w ave rectification w ith resistive load @ TA=２５ and f 50Hz Forw ard surge current @ t<1s and TJ =２５ Pow er dissipation @ TA=２５ Junction temperature Storage temperature range 1N4151 UNITS VR VRM 50.0 75.0 V V IAV 1501) mA IFSM Ptot TJ TSTG 500.0 5001) 175 -55 --- +175 mA mW 1)Valid prov ided that leads at a distance of 8 mm f rom case are kept at ambient temperature. ELECTRICAL CHARACTERISTICS Forw ard voltage @ IF=10mA Leakage current @ VR=50V @ VR=20V TJ =150 Capacitance @ V F=VR=0V Reverse breakdow n voltage tested w ith 5μA pulses Reverse recovery time from IF=10mA to IR=10mA to IR=1mA from IF=10mA to IR=1mA, VR=6V. RL=100Ω. Thermal resistance junction to ambient Rectification efficiency @ 100MHz,V RF=2V VF MIN - TYP - MAX 1.0 UNITS V IR IR CJ - - 50.0 50.0 2 nA μA pF V(BR)R 75.0 - - V trr - - RθJA ηv 0.45 - 4 2 3501) - ns ns K/W - 1)Valid prov ided that leads at a distance of 8 mm f rom case are kept at ambient temperature. Document Number 0268002 BLGALAXY ELECTRICAL www.galaxycn.com 1. RATINGS AND CHARACTERISTIC CURVES 1N4151 FIG.1 -- ADMISSIBLE POWER DISSIPATION NNNNNN VERSUS AMBIENT TEMPERATURE FIG.2 -- FORWARD CHARACTERISTICS mA 10 3 mW 1000 900 800 Ptot 10 2 700 600 T J =100 I F 10 500 T J =25 400 1 300 200 10 -1 100 0 0 100 200℃ 10 -2 TA 0 1 VF 2V FIG.3 -- ADMISSIBLE REPETITIVE PEAK FORWARD CURRENT VERSUS PULSE DURATION A 100 V=tp/T IFRM IFRM tp 10 T=1/fp n=0 T 0.1 0.2 1 0.5 0.1 10 -5 10 -4 10 -3 10 -2 10 -1 1 10S tp www.galaxycn.com Document Number 0268002 BLGALAXY ELECTRICAL 2. RATINGS AND CHARACTERISTIC CURVES FIG.4 -- RECTIFICATION EFFICIENCY JJJJJJJJMEASUREMENT CIRCUIT 1N4151 FIG.5 -- RELATIVE CAPACITANCE VERSUS JJJJJJJJJJJJJJ VOLTAGE 1.1 T J =25 f=1MHz 1.0 D.U.T. 60 Ctot(V R ) Ctot(OV) VRF=2V 2nF 5K VO 0.9 0.8 0.7 0 2 4 6 8 1 0V VR FIG.6 -- LEAKAGE CURRENT VERSUS JUNCTION TEMPERATUREFF FIG.7 -- DYNAMIC FORWARD RESISTANCE FFFVERSUS FORWARD CURRENT nA 10 10 4 4 TJ=25℃ f=1MHz 10 3 10 r 10 2 F 10 10 3 2 10 V R =50V 1 0 10 0 20 0℃ 1 10 -2 10 -1 1 10 IF 10 2 mA www.galaxycn.com Document Number 0268002 BLGALAXY ELECTRICAL 3.