BL Galaxy Electrical Production specification NPN Epitaxial Transistor 2SC1766 FEATURES Pb z Small flat package. z Low saturation voltage VCE(sat)=-0.5V z High speed switching time z PC=1.0 to 2.0W z High saturation current capability Lead-free APPLICATIONS z Power amplifier SOT-89 ORDERING INFORMATION Type No. Marking 2SC1766 Package Code P1766/Q1766/Y1766 SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 2 A ICM Peak Collector Current 2 A IBM Peak Base Current 0.4 A PD Total Power Dissipation 1000 mW Tj,Tstg Junction and Storage Temperature -55~150 ℃ Document number: BL/SSSTG049 Rev.A www.galaxycn.com 1 BL Galaxy Electrical Production specification NPN Epitaxial Transistor 2SC1766 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions Collector cut-off current ICBO Emitter cut-off current MIN MAX UNIT VCB=50V,IE=0 0.1 μA IEBO VEB=5V,IC=0 0.1 μA DC current gain hFE VCE=2V,IC=500mA Collector-emitter saturation voltage VCE(sat) IC=1A, IB=50mA 0.5 V Base-emitter saturation voltage VBE(sat) IC=1A, IB=50mA 1.2 mV Transition frequency fT VCE=2V,Ic=0.5A f=100MHz 120 MHz Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 40 pF CLASSIFICATION Rank OF TYP 70 240 hFE P Q Y Range 82-180 120-270 180-390 MARKING P1766 Q1766 Y1766 TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Document number: BL/SSSTG049 Rev.A www.galaxycn.com 2 BL Galaxy Electrical Production specification NPN Epitaxial Transistor 2SC1766 PACKAGE OUTLINE Plastic surface mounted package SOT-89 SOT-89 Dim Min Max A 4.5 4.7 B 2.3 2.7 C 1.5Typical D 0.35 0.55 E 1.4 1.6 F 0.4 0.6 H 1.55 1.75 J K 0.4Typical 4.15 4.25 All Dimensions in mm SOLDERING FOOTPRINT Unit:mm PACKAGE INFORMATION Device Package Shipping 2SC1766 SOT-89 1000/Tape&Reel Document number: BL/SSSTG049 Rev.A www.galaxycn.com 3