BL GALAXY ELECTRICAL SODDB3 、 SODDB4 SURFACE MOUNT VBO: RECTIFIERS 28 -- 45 V FEATURES ◇The three layer,two terminal,axial lead, SOD-123FL hermetically sealed diacs are designed specifically Cathode Band Top View 1.9± 0.1 breakover current at breakover voltage as 1.0±0.2 for triggering thyristors. They demonstrate low they withstand peak pulse current. The breakover symmetry is within three volts.These diacs are 1.4± 0.15 intended for use in thyrisitors phase control, 0.10-0.30 2.8±0.1 circuits for lamp dimming,universal motor speed 0.6±0.25 control,and heat control. MECHANICAL DATA ◇ Case:JEDEC SOD-123FL,molded plastic over passivated chip ◇ Weight: 0.0008 ounces, 0.022 gram 3.7±0.2 Dimensions in millimeters ABSOLUTE RATINGS Parameters Device marking code SODDB3 SODDB4 DB DC UNITS Power dissipation on printed circuit (L=10mm) T A= 50 ℃ Pc 150 mW Repetitive peak on-state current tp=20µs, f=120Hz ITRM 2.0 A Tj - 40 --- + 125 ℃ TSTG - 40 --- + 125 ℃ Operating junction temperature Storage temperature ELECTRICAL CHARACTERISTICS Test Conditions Parameters Breakover voltage * C=22nF** See FIG.1 VBO |+VBO|- SODDB3 SODDB4 Min 28 35 Typ 32 40 Max 36 45 UNITS V C=22nF** See FIG.1 Max ± 3.0 V |±∆V| ∆I =(IBO→ IF=10mA) See FIG.1 Min 5.0 V Output voltage * VO See FIG.2 Min 5.0 V Breakover current * IBO C=22nF** Max 100 µA tr See FIG.3 Typ 1.5 µs IR VR=0.5VBO Max 10 Breakover voltage symmetry Dynamic breakover voltage * Rise time* Leakage current NOTE: * |-VBO| * Electrical characteristics applicable in both forward and reverse directions. ** Connected in parallel with the devices. Document Number 0280061 BLGALAXY ELECTRICAL µA www.galaxycn.com 1. RATINGS AND CHARACTERISTIC CURVES SODDB3.SODDB4 FIG.1--VOLTAGE-CURRENT CHARACTERISTIC CURVE FIG.2--TEST CIRCUIT FOR OUTPUT VOLTAGE +IF 10mA 10k I BO IB -V 500k D.U.T 220V 60Hz R=20 VO +V 0.5VBO 0.1 F Ｖ VBO -IF FIG.3-- TEST CIRCUIT SEE FIG.2 ADJUST R FOR IP=0.5A FIG.4--POWER DISSIPATION VERSUS AMBIENT TEMPERATURE (MAXIMUM VALUES) P(mW) 160 140 90% 120 IP 100 80 60 40 10% 20 0 0 FIG.5--RELATIVE VARIATION OF VBO VERSUS JUNCTION TEMPERATURE(TYPICAL VALUES) １．０８ o Tamb( C) tr 10 20 30 40 50 60 70 80 90 100 110 120 130 FIG.6--PEAK PULSEE CURRENT VERENT VERSUS PULSE DURATION(MAXIMUM VALUES) ITRM(A) VBO(TJ) VBO(TJ=25 ) 2 1 1.06 f=100Hz TJ( ) TJ initial=25 1.04 0.1 tp(µS) 1.02 1.00 25 50 75 100 125 0.01 10 100 1000 10000 www.galaxycn.com Document Number 0280061 BLGALAXY ELECTRICAL 2.