A Business Partner of Renesas Electronics Corporation. Preliminary Data Sheet NE202930 Silicon NPN Epitaxial High Frequency Transistor R09DS0003EJ0100 Rev.1.00 Jul 14, 2010 FEATURES • • • • High transition frequency fT = 11 GHz TYP. Ideal for low noise and low distortion amplification Suitable for equipments of low collector voltage (Less than 5 V) Suitable for up to 1 GHz applications APPLICATIONS • LNA (Low Noise Amplifier) or power splitter for digital-TV OUTLINE RENESAS Package code: 30 (Package name: 3-pin super minimold (30 PKG)) 1. Emitter 2. Base 3. Collector Note: Marking is "R7D" ORDERING INFORMATION Part Number NE202930-T1 Order Number NE202930-T1-A Package 3-pin super minimold (30 PKG) (Pb-Free) Marking R7D Supplying Form • Embossed tape 8 mm wide • Pin 3 face the perforation side of the tape • Qty 3 kpcs/reel Remark To order evaluation samples, please contact your nearby sales office. Part number for sample order: NE202930-A ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Parameter Collector to Base Voltage Collector to Emitter Voltage (Base Short) VCES Ratings 9 9 Collector to Emitter Voltage (Base Open) Emitter to Base Voltage Collector Current Total Power Dissipation Note Junction Temperature Storage Temperature VCEO 6 V VEBO IC Ptot Tj Tstg 2 100 150 150 −65 to +150 V mA mW °C °C Note: Symbol VCBO Unit V V Free air CAUTION Observe precautions when handling because these devices are sensitive to electrostatic discharge. R09DS0003EJ0100 Rev.1.00 Jul 14, 2010 Page 1 of 6 A Business Partner of Renesas Electronics Corporation. NE202930 ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified) Parameter DC Characteristics Collector Cut-off Current Emitter Cut-off Current DC Current Gain RF Characteristics Gain Bandwidth Product Insertion Power Gain Noise Figure (1) Symbol ICBO IEBO hFE Note1 fT ⏐S21e⏐2 NF1 Test Conditions MIN. TYP. MAX. Unit − − 85 − − 140 100 100 205 nA nA − VCE = 5 V, IC = 30 mA, f = 1 GHz VCE = 5 V, IC = 30 mA, f = 1 GHz − 11.5 11.0 13.5 − − GHz dB VCE = 5 V, IC = 5 mA, f = 1 GHz, ZS = ZSopt, ZL = 50 Ω − 1.15 1.5 dB VCB = 5 V, IE = 0 VEB = 1 V, IC = 0 VCE = 5 V, IC = 5 mA Noise Figure (2) NF2 VCE = 5 V, IC = 30 mA, f = 1 GHz, ZS = ZSopt, ZL = ZLopt − 1.5 − dB Associated Gain (1) Ga1 VCE = 5 V, IC = 5 mA, f = 1 GHz, ZS = ZSopt, ZL = 50 Ω 10.0 12.0 − dB Associated Gain (2) Ga2 VCE = 5 V, IC = 30 mA, f = 1 GHz, ZS = ZSopt, ZL = ZLopt VCB = 5 V, IE = 0, f = 1 MHz VCE = 5 V, IC = 30 mA, f = 1 GHz − 13.5 − dB − 13.5 0.6 15.5 0.8 − pF dB Reverse Transfer Capacitance Maximum Stable Power Gain Gain 1 dB Compression Output Power Output 3rd Order Intercept Point Note 2 Cre MSG Note 3 PO (1 dB) VCE = 5 V, IC (set) = 30 mA, f = 1 GHz, ZS = ZSopt, ZL = ZLopt − 19 − dBm OIP3 VCE = 5 V, IC (set) = 30 mA, f = 1 GHz, Δf = 1 MHz, ZS = ZSopt, ZL = ZLopt − 32 − dBm Notes: 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2% 2. Collector to base capacitance when the emitter grounded. S21 3. MSG = S12 hFE CLASSIFICATION Rank Marking hFE Value YFB R7D 85 to 205 R09DS0003EJ0100 Rev.1.00 Jul 14, 2010 Page 2 of 6 A Business Partner of Renesas Electronics Corporation. NE202930 TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE Reverse Transfer Capacitance Cre (pF) Total Power Dissipation Ptot (mW) 200 Free Air 150 100 50 0 25 50 75 100 125 150 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 1 2 3 5 4 6 7 8 9 Ambient Temperature TA (°C) Collector to Base Voltage VCB (V) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 20 100 Collector Current IC (mA) 10 1 0.1 0.01 0.001 0.0001 0 DC Current Gain hFE 1 000 0.2 0.4 0.6 0.8 10 5 1 2 3 100 μA 90 μA 80 μA 70 μA 60 μA 50 μA 40 μA 30 μA 20 μA IB = 10 μA 4 5 Base to Emitter Voltage VBE (V) Collector to Emitter Voltage VCE (V) DC CURRENT GAIN vs. COLLECTOR CURRENT GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 14 VCE = 5 V 100 10 1 0.001 15 0 0 1.0 Gain Bandwidth Product fT (GHz) Collector Current IC (mA) VCE = 5 V 0.01 0.1 1 10 100 Collector Current IC (mA) 12 VCE = 5 V, f = 1 GHz 10 8 6 4 2 0 1 10 100 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. R09DS0003EJ0100 Rev.1.00 Jul 14, 2010 Page 3 of 6 A Business Partner of Renesas Electronics Corporation. NE202930 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 15 |S21e|2 10 5 VCE = 5 V, ICE = 5 mA 0 0.1 1 10 MAG MSG VCE = 5 V, f = 1 GHz 16 14 12 |S21e|2 10 8 6 4 2 0 1 10 100 Frequency f (GHz) Collector Current IC (mA) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 15 5 13 4 3 11 2 9 1 7 0 1 Noise Figure NF (dB) 4 VCE = 5 V, f = 1 GHz, ZS = Zopt, ZL = 50 Ω 5 100 10 15 VCE = 5 V, f = 1 GHz, ZS = ZL = Zopt 13 3 11 2 9 1 7 0 1 5 100 10 Collector Current IC (mA) OUTPUT POWER, LINEAR GAIN, COLLECTOR CURRENT vs. INPUT POWER EACH OUTPUT POWER, IM3 vs. EACH INPUT POWER 30 20 200 VCE = 5 V, ICE (set) = 30 mA, f = 1 GHz 150 Pout GL 10 100 0 50 IC –10 –20 –10 0 10 0 20 Input Power Pin (dBm) Each Output Power Pout (each) (dBm) 3rd Order Intermodulation Distortion IM3 (dB) Collector Current IC (mA) Collector Current IC (mA) Noise Figure NF (dB) MAG 18 40 30 20 10 Associated Gain Ga (dB) MSG 20 5 Output Power Pout (dBm) Linear Gain GL (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 25 Associated Gain Ga (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY Pout 0 –10 –20 –30 –40 –50 –60 –70 –80 –30 IM3 –20 –10 0 VCE = 5 V, ICE (set) = 30 mA, f = 1 GHz 10 20 30 Each Input Power Pin (each) (dBm) Remark The graphs indicate nominal characteristics. R09DS0003EJ0100 Rev.1.00 Jul 14, 2010 Page 4 of 6 A Business Partner of Renesas Electronics Corporation. NE202930 S-PARAMETERS S-parameters and noise parameters are provided on our Web site in a format (S2P) that enables the direct import of the parameters to microwave circuit simulators without the need for keyboard inputs. Click here to download S-parameters. [RF and Microwave] → [Device Parameters] URL http://www2.renesas.com/microwave/en/download.html R09DS0003EJ0100 Rev.1.00 Jul 14, 2010 Page 5 of 6 A Business Partner of Renesas Electronics Corporation. NE202930 PACKAGE DIMENSIONS 3-PIN SUPER MINIMOLD (30 PKG) (UNIT: mm) 2.1±0.1 2 3 1 0.3+0.1 –0 2.0±0.2 0.65 0.65 0.3+0.1 –0 1.25±0.1 0 to 0.1 0.9±0.1 0.15+0.1 –0.05 0.3 Marking PIN CONNECTIONS 1. Emitter 2. Base 3. Collector R09DS0003EJ0100 Rev.1.00 Jul 14, 2010 Page 6 of 6 Revision History Rev. 1.00 Date Jul 14, 2010 NE202930 Data Sheet Description Summary Page − First edition issued All trademarks and registered trademarks are the property of their respective owners. C-1 NOTICE 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. California Eastern Laboratories and Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2. California Eastern Laboratories has used reasonable care in preparing the information included in this document, but California Eastern Laboratories does not warrant that such information is error free. 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