UPA812T

DATA SHEET
SILICON TRANSISTOR
UPA812T
NPN SILICON HIGH
FREQUENCY TRANSISTOR
OUTLINE DIMENSIONS (Units in mm)
FEATURES
•
•
•
•
•
SMALL PACKAGE STYLE:
2 NE681 Die in a 2 mm x 1.25 mm package
PACKAGE OUTLINE S06
(Top View)
LOW NOISE FIGURE:
NF = 1.4 dB TYP at 1 GHz
2.1 ± 0.1
HIGH GAIN:
|S21E|2 = 12 dB TYP at 1 GHz
1.25 ± 0.1
HIGH GAIN BANDWIDTH: fT = 7 GHz
LOW CURRENT OPERATION
0.65
2.0 ± 0.2
DESCRIPTION
1.3
The UPA812T is two NPN high frequency silicon epitaxial
transistors encapsulated in an ultra small 6 pin SMT package.
Each transistor is independently mounted and easily configured for either dual transistor or cascode operation. The high
fT, low voltage bias and small size make this device suited for
various hand-held wireless applications.
ABSOLUTE MAXIMUM
PARAMETERS
UNITS
RATINGS
VCBO
Collector to Base Voltage
V
20
VCEO
Collector to Emitter Voltage
V
10
VEBO
Emitter to Base Voltage
V
1.5
IC
Collector Current
mA
65
PT
Total Power Dissipation
1 Die
2 Die
mW
mW
110
200
TJ
Junction Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to +150
6
2
5
3
4
0.2 (All Leads)
0.9 ± 0.1
0.7
RATINGS1 (TA = 25°C)
SYMBOLS
1
+0.10
0.15 - 0.05
0 ~ 0.1
PIN OUT
1. Collector Transistor 1
2. Base Transistor 2
3. Collector Transistor 2
4. Emitter Transistor 2
5. Emitter Transistor 1
6. Base Transistor 1
Note:
Pin 3 is identified with a circle on the bottom of the package.
Note: 1.Operation in excess of any one of these parameters may
result in permanent damage.
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
PARAMETERS AND CONDITIONS
UPA812T
S06
UNITS
MIN
TYP
MAX
ICBO
Collector Cutoff Current at VCB = 10 V, IE = 0
μA
0.8
IEBO
Emitter Cutoff Current at VEB = 1 V, IC = 0
μA
0.8
hFE1
fT
Cre2
|S21E|2
NF
hFE1/hFE2
Forward Current Gain at VCE = 3 V, IC = 7 mA
Gain Bandwidth at VCE = 3 V, IC = 7 mA, f = 1 GHz
GHz
Feedback Capacitance at VCB = 3 V, IE = 0, f = 1 MHz
pF
Insertion Power Gain at VCE = 3 V, IC =7 mA, f = 1 GHz
dB
Noise Figure at VCE = 3 V, IC = 7 mA, f = 1 GHz
dB
hFE Ratio: hFE1 = Smaller Value of Q1, or Q2
hFE2 = Larger Value of Q1 or Q2
70
100
4.5
7.0
10
12
240
0.9
1.4
0.85
Notes: 1. Pulsed measurement, pulse width ≤ 350 μs, duty cycle ≤ 2 %.
2. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.
For Tape and Reel version use part number UPA812T-T1, 3K per reel.
1.7
UPA812T
TYPICAL PERFORMANCE CURVES (TA = 25°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
Free Air
2
200
El
Pe
em
rE
en
ts
lem
in
en
To
t
Collector Current, IC (mA)
Total Power Dissipation, PT (mW)
25
al
t
100
20
160 µA
140 µA
15
120 µA
100 µA
10
80 µA
60 µA
40 µA
5
lB=20 µA
0
50
100
0
150
0.5
1.0
Ambient Temperature, TA (°C)
Collector to Emitter Voltage, VCE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
50
VCE = 3 V
40
DC Current Gain, hFE
Collector Current, IC (mA)
VCE = 3 V
30
20
10
100
50
20
10
0
0.5
0.5
1.0
5
10
Collector Current, IC (mA)
FEEDBACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
5.0
50
10
Gain Bandwidth Product, fT (GHz)
f = 1 MHz
Feddback Capacitance, CRE (pF)
1
Base to Emitter Voltage, VBE (V)
2.0
1.0
0.5
0.2
0.1
1
2
5
10
20
Collector to Base Voltage, VCB (V)
50
VCE = 3 V
f = 1 GHz
8
6
4
2
0
0.5
1
5
10
Collector Current, IC (mA)
50
UPA812T
TYPICAL PERFORMANCE CURVES (TA = 25°C)
INSERTION POWER GAIN vs.
FREQUENCY
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
25
VCE = 3 V
f = 1 GHz
Insertion Power Gain, IS21eI2 (dB)
Insertion Power Gain, IS21eI2 (dB)
15
10
5
0
0.5
1
5
10
50
VCE = 3 V
lc = 7 mA
20
15
10
5
0
0.1
0.2
0.5
1.0
2.0
5.0
Frequency, f (GHz)
Collector Current, lC (mA)
NOISE FIGURE vs.
COLLECTOR CURRENT
Noise Figure, NF (dB)
5
VCE = 3 V
f = 1 GHz
4
3
2
1
0
0.5
1.0
5.0
10
50
Collector Current, lC (mA)
ORDERING INFORMATION
PART NUMBER
UPA812T-T1-A
QUANTITY
3000
PACKAGING
Tape & Reel
EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
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DATA SUBJECT TO CHANGE WITHOUT NOTICE
Date Published Jan. 1999
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