NPN SiGe RF ANALOG INTEGRATED CIRCUIT PA901TU D NPN SiGe RF IC IN A 8-PIN LEAD-LESS MINIMOLD UE DESCRIPTION The PA901TU is a silicon germanium HBT IC designed for the power amplifier of 5.8 GHz cordless phone and other 5.8 GHz applications. This IC consists of two stage amplifiers and has excellent performance, high efficiency, high gain, low power consumption. The device is packaged in surface mount 8-pin lead-less minimold plastic package. The device is fabricated with our SiGe HBT process UHS2-HV technology. FEATURES • Output Power : Pout = 19 dBm @ Pin = 3 dBm, VCE = 3.6 V, f = 5.8 GHz : IC = 90 mA @ Pin = 3 dBm, VCE = 3.6 V, f = 5.8 GHz O NT IN • Low Power • Single Power Supply Operation : VCE = 3.6 V • Built-in bias circuit • 8-pin lead-less minimold (2.0 2.2 0.5 mm) APPLICATIONS • 5.8 GHz cordless phone • 5.8 GHz band DSRC (Dedicated Short Range Communication) system • 5.8 GHz video transmitter ORDERING INFORMATION Part Number Order Number Quantity PA901TU PA901TU-A PA901TU-T3 PA901TU-T3-A 5 kpcs/reel 50 pcs (Non reel) Package 8-pin lead-less Marking A901 minimold (Pb-Free) Supplying Form • 8 mm wide embossed taping • Pin 1, Pin 8 face the perforation side of the tape SC Remark To order evaluation samples, contact your nearby sales office. DI The unit sample quantity is 50 pcs. Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge Document No. PU10538EJ01V0DS (1st edition) Date Published October 2004 CP(K) PA901TU UE D PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM ABSOLUTE MAXIMUM RATINGS (T A = +25C) Symbol Ratings Collector to Base Voltage VCBO 15 V Collector to Emitter Voltage VCEO 4.5 V Emitter to Base Voltage VEBO 2 V Collector Current of Q1 IC1 75 mA Collector Current of Q2 IC2 250 mA IBIAS 25 mA 410 mW Tj 150 C Tstg 65 to +150 C TA 40 to +85 C Bias Current Total Power Dissipation Junction Temperature Storage Temperature Unit O NT IN Parameter Operating Ambient Temperature Ptot Note Note Mounted on 20 20 0.8 mm (t) glass epoxy PCB (FR-4) SC THERMAL RESISTANCE (T A = +25C) Parameter Channel to Ambient Resistance Symbol Rth (j-a1) Test Conditions Note Rth (j-a2) Free Air DI Note Mounted on 20 20 0.8 mm (t) glass epoxy PCB (FR-4) Symbol MIN. TYP. MAX. Unit Collector to Emitter Voltage VCE 3.6 4.5 V Total Current Itotal 90 300 mA Input Power Pin 3 +5 dBm RECOMMENDED OPERATING RANGE (All Parameter) Parameter 2 Data Sheet PU10538EJ01V0DS Ratings Unit 150 C/W TBD C/W PA901TU ELECTRICAL CHARACTERISTICS (T A = +25C) DC CHARACTERISTICS (1) Q1 Symbol Test Conditions MIN. TYP. MAX. Unit 60 nA ICBO VCB = 5 V, IE = 0 mA Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 mA VCE = 3 V, IC = 6 mA 80 VCE = 3.6 V, VBE = VBIAS = 0.865 V 2 DC Current Gain hFE Current Ratio (IC (set) 1/IBIAS) Note CR1 (2) Q2 Parameter Symbol Test Conditions Collector Cut-off Current ICBO VCB = 5 V, IE = 0 mA Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 mA DC Current Gain hFE (3) Bias Circuit Parameter Bias Circuit Current CR2 VCE = 3 V, IC = 20 mA VCE = 3.6 V, VBE = VBIAS = 0.865 V Symbol IBIAS 120 nA 120 160 4.5 9 MIN. TYP. MAX. Unit 200 nA 400 nA 80 120 160 8 10 13 MIN. TYP. MAX. Unit 4 mA O NT IN Current Ratio (IC (set) 2/IBIAS) Note UE Collector Cut-off Current D Parameter Test Conditions VBIAS = 0.865 V Note Pulse measurement: PW 350 s, Duty Cycle 2% DI SC IBIAS, IC (set) 1, IC (set) 2 MEASUREMENT CIRCUIT IC (set) 1 = CR1 IBIAS = 4.5 IBIAS (TYP.) IC (set) 2 = CR2 IBIAS = 4.5 IBIAS (TYP.) The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. Data Sheet PU10538EJ01V0DS 3 PA901TU ELECTRICAL CHARACTERISTICS (T A = +25C) RF CHARACTERISTICS (1) Q1 Insertion Power Gain (Q1) Maximum Available Power Gain (Q1) Symbol S21e 2 MAG1 Output Power (Q1) Pout1 Test Conditions MIN. TYP. MAX. Unit VCE = 3.6 V, IC = 12 mA, f = 5.8 GHz 8.5 10.0 11.5 dB VCE = 3.6 V, IC = 12 mA, f = 5.8 GHz 13.5 VCE = 3.6 V, IC (set) = 12 mA, 10.2 15.0 dB 11.2 dBm 20 mA MIN. TYP. MAX. Unit f = 5.8 GHz, Pin = 3 dBm ICC1 VCE = 3.6 V, IC (set) = 12 mA, UE Collector Current (Q1) D Parameter f = 5.8 GHz, Pin = 3 dBm (2) Q2 Parameter Insertion Power Gain (Q2) Output Power (Q2) S21e Test Conditions 2 VCE = 3.6 V, IC = 40 mA, f = 5.8 GHz 2 3.5 5 dB MAG2 VCE = 3.6 V, IC = 40 mA, f = 5.8 GHz 8.5 10.0 10.5 dB 17.5 19.0 dBm 70 mA MIN. TYP. MAX. Unit 17.5 19.0 mA 90 mA O NT IN Maximum Available Power Gain (Q2) Symbol Pout2 VCE = 3.6 V, IC (set) = 40 mA, f = 5.8 GHz, Pin = 11 dBm Collector Current (Q2) ICC2 VCE = 3.6 V, IC (set) = 40 mA, f = 5.8 GHz, Pin = 11 dBm (3) Q1 + Q2, 2 stage Amplifiers Parameter Output Power Symbol Pout Test Conditions VCE = 3.6 V, RBIAS = 680 , f = 5.8 GHz, Pin = 3 dBm Total Current Itotal VCE = 3.6 V, RBIAS = 680 , f = 5.8 GHz, Pin = 3 dBm DI SC Note by MEASUREMENT CIRCUIT 1 4 Note Data Sheet PU10538EJ01V0DS Note PA901TU SC O NT IN UE D MEASUREMENT CIRCUIT 1 IC (set) 1 = CR1 IBIAS = 4.5 IBIAS (TYP.) IC (set) 2 = CR2 IBIAS = 4.5 IBIAS (TYP.) DI The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. Data Sheet PU10538EJ01V0DS 5 PA901TU Remarks O NT IN UE D ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD 1. Substrate : 20 20 0.8 (t) mm FR-4 (4 Layer, each thickness 0.2 mm), copper thickness 18 m, gold flash plating 2. Back side : GND pattern : Through hole SC 3. USING THE EVALUATION BOARD Values Symbol Values R1 680 C2 0.5 pF R2 10 C3 0.5 pF R3 10 C4 1.0 pF R4 10 C5 0.75 pF R5 10 C6 1.0 pF L1 100 nH C7 1.0 pF L2 5.6 nH C8 1.0 pF L3 5.6 nH C9 1.0 pF L4 12 nH C10 10 nF C1 0.75 pF C11 10 nF DI Symbol 6 Data Sheet PU10538EJ01V0DS PA901TU SC O NT IN UE D TYPICAL CHARACTERISTICS (T A = +25C , VCE = 3.6 V, RBIAS = 680 , f = 5.8 GHz, unless otherwise specified) DI Remark The graphs indicate nominal characteristics. Data Sheet PU10538EJ01V0DS 7 PA901TU PACKAGE DIMENSIONS O NT IN UE D 8-PIN LEAD-LESS MINIMOLD (UNIT: mm) DI SC Remark ( ) : Reference value 8 Data Sheet PU10538EJ01V0DS