A Business Partner of Renesas Electronics Corporation. Preliminary μPD5902T7K Data Sheet CMOS Integrated Circuits High Power SPDT Switch R09DS0046EJ0200 Rev.2.00 Nov 19, 2012 DESCRIPTION ED The μPD5902T7K is a CMOS MMIC SPDT (Single Pole Double Throw) switch for GSM and UMTS/LTE main Antenna switching and other High Power RF switching applications up to +35 dBm. This device can operate frequency from 0.05 to 6.0 GHz, having low insertion loss and high isolation. This device is housed in a 12-pin plastic QFN (Quad Flat Non-Leaded) (T7K) package. FEATURES Low control voltage : Vcont = 1.3 V MIN., VDD = 2.3 V MIN. Low insertion loss : Lins = 0.35/0.40 dB TYP. @ f = 1.0/2.0 GHz High isolation : ISL = 45/37 dB TYP. @ f = 1.0/2.0 GHz High Handling power : Pin (0.1dB) = +38 dBm TYP. @f = 0.9/2.0 GHz High-density surface mounting : 12-pin plastic QFN (T7K) package (2.0 × 2.0 × 0.6 mm) No DC blocking capacitors required. IN U • • • • • • APPLICATIONS GSM and UMTS/LTE main Antenna switching etc. Other RF switching Applications. Antenna tuning Applications. NT • • • ORDERING INFORMATION Part Number μPD5902T7K-E2 Order Number μPD5902T7K-E2-A Package 12-pin plastic QFN (T7K) (Pb-Free) Marking 5902 Supplying Form Embossed tape 8 mm wide Pin 10, 11 and 12 face the perforation side of the tape • Qty 3 kpcs/reel Remark To order evaluation samples, please contact your nearby sales office. Part number for sample order: μPD5902T7K-A DI SC O • • CAUTION Although this device is designed to be as robust as possible, ESD (Electrostatic Discharge) can damage this device. This device must be protected at all times from ESD. Static charges may easily produce potentials of several kilovolts on the human body or equipment, which can discharge without detection. Industry-standard ESD precautions must be employed at all times. The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. R09DS0046EJ0200 Rev.2.00 Nov 19, 2012 Page 1 of 12 A Business Partner of Renesas Electronics Corporation. μPD5902T7K PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM 9 GND 1 GND 9 9 8 RF1 2 RF2 8 8 7 GND 3 GND 7 6 4 5 SW TRUTH TABLE Vcont RFC−RF1 RFC−RF2 High Low ON OFF OFF ON 11 1 13 7 6 12 2 3 6 5 Pin Name 1 2 3 4 5 6 7 8 9 10 11 12 13 GND RF1 GND GND VDD Vcont GND RF2 GND GND RFC GND GND ED GND 10 10 Pin No. 4 IN U 5 4 (Bottom View) Vcont 3 11 VDD 2 12 RFC 10 5902 1 11 GND 12 (Top View) GND (Top View) ABSOLUTE MAXIMUM RATINGS (TA = +25°C, unless otherwise specified) Symbol VDD Vcont Pin TA Tstg Ratings 3.6 3.6 +38 −40 to +85 −55 to +125 Unit V V dBm °C °C NT Parameter Supply Voltage Control Voltage Input Power Operating Ambient Temperature Storage Temperature SC O RECOMMENDED OPERATING RANGE (TA = +25°C, unless otherwise specified) Parameter Operating Frequency Supply Voltage Control Voltage (High) Control Voltage (Low) Note: Symbol f VDD Vcont (H) Note Vcont (L) MIN. 0.05 2.3 1.3 0 TYP. − − − − MAX. 6.0 3.3 VDD 0.4 Unit GHz V V V Vcont ≤ VDD DI <R> R09DS0046EJ0200 Rev.2.00 Nov 19, 2012 Page 2 of 12 A Business Partner of Renesas Electronics Corporation. μPD5902T7K ELECTRICAL CHARACTERISTICS (TA = +25°C, VDD = 2.5 V, Vcont (H) = 1.8 V, Vcont (L) = 0 V, Z0 = 50 Ω, unless otherwise specified) Return Loss (RFC) Return Loss (RF1,2) 0.1 dB Loss Compression Input Power Harmonics 3rd Order Inter Modulation Distortion Input 3rd order Intercept Point Switch Control Speed Supply Current Control Current Note: TYP. 0.30 0.35 0.40 0.45 0.50 0.60 50 45 37 35 30 MAX. 0.45 0.50 0.55 0.75 0.80 0.95 − − − − − 23 18 − − f = 3.8 to 6.0 GHz f = 0.05 to 3.8 GHz − 15 RL2 RL1 f = 3.8 to 6.0 GHz f = 0.05 to 3.8 GHz − 15 15 18 − − RL2 f = 3.8 to 6.0 GHz f = 0.9 GHz − 15 − +38.0 − Pin(0.1dB)1 f = 2.0 GHz Pin(0.1dB)2 2f0 3f0 2f0 3f0 IMD2 IMD3 IIP3 Unit ED MIN. − − − − − − 45 40 32 30 25 ISL6 RL1 +36.0 Note +38.0 dB dBm Note − 75 70 75 70 80 75 85 80 − − − − f = 835 MHz, Pin = +20 dBm f = 45 MHz, Pin = –15 dBm − −98 −93 f = 1 950 MHz, Pin = +20 dBm f = 190MHz, Pin = –15 dBm − −105 −100 f = 835 MHz, Pin = +20 dBm f = 790 MHz, Pin = –15 dBm f = 1 950 MHz, Pin = +20 dBm f = 1 760 MHz, Pin = –15 dBm f = 2 500 MHz, Pin = +20 dBm f = 2 501 MHz, Pin = +20 dBm − −110 −105 − −110 −105 65 70 − dBm μsec f = 0.9 GHz, Pin = +35 dBm f = 2.0 GHz, Pin = +33 dBm SC O 2nd Order Inter Modulation Distortion Test Conditions f = 0.05 to 0.5 GHz, Pin = 0 dBm f = 0.5 to 1.0 GHz f = 1.0 to 2.0 GHz f = 2.0 to 2.7 GHz f = 2.7 to 3.8 GHz f = 3.8 to 6.0 GHz f = 0.05 to 0.5 GHz, Pin = 0 dBm f = 0.5 to 1.0 GHz f = 1.0 to 2.0 GHz f = 2.0 to 2.7 GHz f = 2.7 to 3.8 GHz IN U Isolation (RFC − RF1,2) +36.0 dBc dBm Tsw 50% CTL to 90/10% − 2.0 5.0 IDD Active Mode No RF − 130 250 Icont(H) Vcont : High No RF − − 1 Icont(L) Vcont : Low No RF − − 1 DI <R> Symbol Lins1 Lins2 Lins3 Lins4 Lins5 Lins6 ISL1 ISL2 ISL3 ISL4 ISL5 NT Parameter Insertion Loss μA Absolute Maximum Ratings R09DS0046EJ0200 Rev.2.00 Nov 19, 2012 Page 3 of 12 A Business Partner of Renesas Electronics Corporation. μPD5902T7K EVALUATION CIRCUIT RFC GND GND 10 1 9 GND ED 11 12 GND RF1 RF2 2 8 13 GND 3 IN U 7 GND GND 4 5 6 GND Vcont 1 000 pF NT VDD 1 000 pF The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. SC O APPLICATION INFORMATION Switch LESD • LESD provides a means to increase the ESD protection on a specific RF port, typically the port attached to the antenna. DI <R> R09DS0046EJ0200 Rev.2.00 Nov 19, 2012 Page 4 of 12 A Business Partner of Renesas Electronics Corporation. μPD5902T7K TYPICAL CHARACTERISTICS (TA = +25°C, VDD = 2.5 V, Vcont (H) = 1.8 V, Vcont (L) = 0 V, Z0 = 50 Ω, unless otherwise specified) RFC-RF1/RF2 INSERTION LOSS vs. FREQUENCY RFC-RF1/RF2 ISOLATION vs. FREQUENCY 0 0.00 RFC-RF1 −0.20 −0.60 RFC-RF2 −0.80 −1.00 −15 −20 RFC-RF2 −25 −30 −35 RFC-RF1 −40 −1.20 1.0 2.0 3.0 4.0 5.0 −50 0.0 6.0 1.0 2.0 3.0 4.0 5.0 6.0 Frequency f (GHz) Frequency f (GHz) RFC RETURN LOSS vs. FREQUENCY RF1/RF2 RETURN LOSS vs.FREQUENCY 0 0 −5 −5 −15 Return Loss RL (dB) −10 −10 −15 NT RFC-RF2 ON −20 −25 −30 RFC-RF1 ON −35 RFC-RF2 ON −20 −25 −30 −35 RFC-RF1 ON −40 −40 −45 −45 SC O −50 0.0 IN U −45 −1.40 0.0 Return Loss RL (dB) ED −10 −0.40 Isolation ISL (dB) Insertion Loss Lins (dB) −5 1.0 2.0 3.0 4.0 5.0 6.0 Frequency f (GHz) −50 0.0 1.0 2.0 3.0 4.0 5.0 6.0 Frequency f (GHz) DI Remark The graphs indicate nominal characteristics. R09DS0046EJ0200 Rev.2.00 Nov 19, 2012 Page 5 of 12 A Business Partner of Renesas Electronics Corporation. μPD5902T7K RFC-RF1/RF2 INSERTION LOSS vs. FREQUENCY RFC-RF1/RF2 ISOLATION vs. FREQUENCY 0 0.00 −5 VDD = 3.3 V −10 −0.40 VDD = 2.3 V −0.60 −0.80 −1.00 −15 −20 −25 −30 ED VDD = 2.5 V Isolation ISL (dB) Insertion Loss Lins (dB) −0.20 VDD = 2.5 V −35 VDD = 2.3 V −40 −1.20 −45 −1.40 0.0 1.0 2.0 3.0 4.0 5.0 VDD = 3.3 V −50 0.0 6.0 1.0 RF1/RF2 RETURN LOSS vs. FREQUENCY Return Loss RL (dB) −10 −15 VDD = 2.3 V −25 −30 VDD = 2.5 V VDD = 3.3 V −10 −15 −20 VDD = 2.3 V −25 −30 NT Return Loss RL (dB) 6.0 −5 −5 −35 −40 VDD = 2.5 V VDD = 3.3 V −45 −45 −50 0.0 5.0 0 0 −40 4.0 IN U RFC RETURN LOSS vs. FREQUENCY −35 3.0 Frequency f (GHz) Frequency f (GHz) −20 2.0 1.0 2.0 3.0 4.0 5.0 6.0 1.0 2.0 3.0 4.0 5.0 6.0 Frequency f (GHz) SC O Frequency f (GHz) −50 0.0 DI Remark The graphs indicate nominal characteristics. R09DS0046EJ0200 Rev.2.00 Nov 19, 2012 Page 6 of 12 A Business Partner of Renesas Electronics Corporation. μPD5902T7K RFC-RF1/RF2 INSERTION LOSS vs. INPUT POWER RFC-RF1/RF2 INSERTION LOSS vs. INPUT POWER 0.00 0.00 VDD = 3.3 V −0.40 −0.60 VDD = 2.3 V −0.80 −1.00 −1.00 −1.20 −1.20 32 34 36 38 40 −1.40 30 38 40 −65 −75 3rd Harmonics 3f0 (dBc) −70 VDD = 2.3 V VDD = 2.5 V VDD = 3.3 V −85 −90 32 34 −70 VDD = 2.3 V VDD = 2.5 V −75 VDD = 3.3 V −80 −85 36 38 −90 −95 30 40 Input Power Pin (dBm)@f = 0.9 GHz SC O RFC-RF1/RF2 2nd HARMONICS vs. INPUT POWER −65 −65 −70 −70 −75 VDD = 2.3 V VDD = 2.5 V −80 VDD = 3.3 V −85 DI −90 32 34 36 38 40 Input Power Pin (dBm)@f = 2.0 GHz 32 34 36 38 40 Input Power Pin (dBm)@f = 0.9 GHz RFC-RF1/RF2 3rd HARMONICS vs. INPUT POWER 3rd Harmonics 3f0 (dBC) 2nd Harmonics 2f0 (dBC) 36 RFC-RF1/RF2 3rd HARMONICS vs. INPUT POWER NT 2nd Harmonics 2f0 (dBc) −65 −95 30 34 Input Power Pin (dBm)@f = 2.0 GHz RFC-RF1/RF2 2nd HARMONICS vs. INPUT POWER −95 30 32 IN U Input Power Pin (dBm)@f = 0.9 GHz ED VDD = 2.3 V −0.80 −80 VDD = 2.5 V −0.40 −0.60 −1.40 30 VDD = 3.3 V −0.20 Insertion Loss Lins (dB) Insertion Loss Lins (dB) −0.20 VDD = 2.5 V VDD = 2.3 V VDD = 2.5 V −75 VDD = 3.3 V −80 −85 −90 −95 30 32 34 36 38 40 Input Power Pin (dBm)@f = 2.0 GHz Remark The graphs indicate nominal characteristics. R09DS0046EJ0200 Rev.2.00 Nov 19, 2012 Page 7 of 12 A Business Partner of Renesas Electronics Corporation. μPD5902T7K RFC-RF1/RF2 INSERTION LOSS vs. FREQUENCY RFC-RF1/RF2 ISOLATION vs. FREQUENCY 0 0.00 −10 −0.40 Isolation ISL (dB) Insertion Loss Lins (dB) −5 TA = 25 °C TA = 85 °C −0.60 −0.80 −1.00 −15 −20 −25 TA = 25 °C −30 TA = 85 °C −35 −40 −1.20 TA = −40 °C −45 −1.40 0.0 1.0 2.0 3.0 4.0 5.0 −50 0.0 6.0 2.0 3.0 4.0 5.0 6.0 IN U RFC RETURN LOSS vs. FREQUENCY RF1/RF2 RETURN LOSS vs. FREQUENCY 0 0 −5 −5 Return Loss RL (dB) −10 −15 −20 TA = 85 °C −25 −30 −35 TA = −40 °C −40 TA = 25 °C −10 −15 −20 TA = 85 °C −25 −30 NT Return Loss RL (dB) 1.0 Frequency f (GHz) Frequency f (GHz) −35 TA = −40 °C −40 TA = 25 °C −45 −45 −50 0.0 ED TA = −40 °C −0.20 1.0 2.0 3.0 4.0 5.0 6.0 1.0 2.0 3.0 4.0 5.0 6.0 Frequency f (GHz) SC O Frequency f (GHz) −50 0.0 DI Remark The graphs indicate nominal characteristics. R09DS0046EJ0200 Rev.2.00 Nov 19, 2012 Page 8 of 12 A Business Partner of Renesas Electronics Corporation. μPD5902T7K RFC-RF1/RF2 INSERTION LOSS vs. INPUT POWER RFC-RF1/RF2 INSERTION LOSS vs. INPUT POWER 0.00 0.00 Insertion Loss Lins (dB) −0.20 TA = 25 °C Insertion Loss Lins (dB) TA = −40 °C −0.20 −0.40 −0.60 −0.80 −1.00 −1.00 −1.20 −1.20 −1.40 30 32 34 36 38 40 −1.40 30 Input Power Pin (dBm)@ f = 0.9 GHz TA = 85 °C ED TA = 85 °C −0.80 32 34 36 38 40 Input Power Pin (dBm)@f = 2.0 GHz −65 RFC-RF1/RF2 3rd HARMONICS vs. INPUT POWER IN U RFC-RF1/RF2 2nd HARMONICS vs. INPUT POWER −65 −75 3rd Harmonics 3f0 (dBc) −70 TA = −40 °C TA = 85 °C −80 −85 TA = 25 °C −90 −95 30 32 34 −70 TA = 25 °C TA = 85 °C −75 −80 TA = −40 °C −85 NT 2nd Harmonics 2f0 (dBc) TA = 25 °C −0.40 −0.60 36 38 −90 −95 30 40 Input Power Pin (dBm)@f = 0.9 GHz SC O RFC-RF1/RF2 2nd HARMONICS vs. INPUT POWER −65 −65 −70 −70 −75 −80 TA = −40 °C TA = 85 °C −85 TA = 25 °C DI −90 −95 30 32 34 36 38 40 Input Power Pin (dBm)@f = 2.0 GHz 32 34 36 38 40 Input Power Pin (dBm)@f = 0.9 GHz RFC-RF1/RF2 3rd HARMONICS vs. INPUT POWER 3rd Harmonics 3f0 (dBC) 2nd Harmonics 2f0 (dBC) TA = −40 °C TA = 85 °C −75 −80 TA = 25 °C −85 −90 −95 30 TA = −40 °C 32 34 36 38 40 Input Power Pin (dBm)@f = 2.0 GHz Remark The graphs indicate nominal characteristics. R09DS0046EJ0200 Rev.2.00 Nov 19, 2012 Page 9 of 12 A Business Partner of Renesas Electronics Corporation. μPD5902T7K MOUNTING PAD LAYOUT DIMENSIONS 12-PIN PLASTIC QFN (T7K) (UNIT: mm) MOUNTING PAD 1.15 1.15 0.5 ED 0.8 0.8 0.5 0.8 NT 12−0.15 1.15 1.2 0.8 0.5 IN U 1.2 0.5 1.15 C0.2 SOLDER MASK 1.125 1.125 0.825 SC O 0.825 0.5 0.5 1.125 1.125 0.825 0.825 0.5 0.97 12−0.15 DI 0.97 0.5 C0.2 Solder thickness : 0.1 mm Remark The mounting pad layout in this document is for reference only. When designing PCB, please consider workability of mounting, solder joint reliability, prevention of solder bridge and so on, in order to optimize the design. R09DS0046EJ0200 Rev.2.00 Nov 19, 2012 Page 10 of 12 A Business Partner of Renesas Electronics Corporation. μPD5902T7K PACKAGE DIMENSIONS 12-PIN PLASTIC QFN (T7K) (UNIT: mm) (Top View) (Bottom View) (Side View) 2±0.1 1.2±0.1 0.57+0.03 –0.05 Remark A > 0 1.2±0.1 ED A A 0.08 MIN. 0.2+0.07 –0.05 DI SC O NT ( ): Reference value 0.2±0.075 IN U 2±0.1 0.5±0.1 (0 .3 2) (C0.2) R09DS0046EJ0200 Rev.2.00 Nov 19, 2012 Page 11 of 12 A Business Partner of Renesas Electronics Corporation. μPD5902T7K RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Partial Heating Soldering Conditions Peak temperature (package surface temperature) Time at peak temperature Time at temperature of 220°C or higher Preheating time at 120 to 180°C Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) : 260°C or below : 10 seconds or less : 60 seconds or less : 120±30 seconds : 3 times : 0.2% (Wt.) or below Condition Symbol IR260 ED Soldering Method Infrared Reflow Peak temperature (terminal temperature) : 350°C or below Soldering time (per side of device) : 3 seconds or less Maximum chlorine content of rosin flux (% mass) : 0.2% (Wt.) or below IN U CAUTION HS350 DI SC O NT Do not use different soldering methods together (except for partial heating). R09DS0046EJ0200 Rev.2.00 Nov 19, 2012 Page 12 of 12 μPD5902T7K Data Sheet Revision History Rev. Date Description Summary Page Sep 10, 2012 – First edition issued 2.00 Nov 19, 2012 p.2 The block diagram is changed. p.3 The symbol indicating the range between terminals is changed from “to” to “−“. p.4 The evaluation circuit is changed. DI SC O NT IN U ED 1.00 All trademarks and registered trademarks are the property of their respective owners. C-1