PS2607 PS2607L PS2608 PS2608L HIGH ISOLATION VOLTAGE AC INPUT, DARLINGTON TRANSISITOR TYPE 6 PIN OPTOCOUPLER FEATURES DESCRIPTION • HIGH ISOLATION VOLTAGE BV: 5 k Vr.m.s. MIN PS2607, PS2607L, PS2608, and PS2608L are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon Darlington-connected phototransistor. PS2607, PS2608 are in a plastic DIP (Dual In-Line Package). PS2607L, PS2608L are lead bending type (Gull-wing) for surface mount. PS2607 and PS2607L have a base pin and PS2608 and PS2608L have no base pin. • AC INPUT RESPONSE • HIGH SPEED SWITCHING tr,tf = 100 µs TYP • ULTRA HIGH CURRENT TRANSFER RATIO CTR: 2000% TYP APPLICATIONS Interface circuit for various instrumentations, and control equipment. • AC LINE/DIGITAL LOGIC • DIGITAL LOGIC/DIGITAL LOGIC • TWISTED PAIR LINE RECEIVER • TELEPHONE/TELEGRAPH LINE RECEIVER • HIGH FREQUENCY POWER SUPPLY FEEDBACK CONTROL ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER Transistor Diode SYMBOLS MIN TYP MAX 1.4 Forward Voltage, IF = ±10 mA V 1.1 C Junction Capacitance, V = 0, f = 1.0 MHz pF 60 Collector to Emitter Dark Current, VCE = 40 V, IF = 0 nA Collector to Emitter Breakdown Voltage, IC = 1 mA, IB = 0 V ICEO BVCEO BVECO CTR1/CTR2 400 40 Emitter to Collector Breakdown Voltage, IE = 100 µA, IB = 0 V 6 Current Transfer Ratio, IF = ±1 mA, VCE = 2 V % 200 2000 0.3 1.0 CTR (Ratio)1, IF = ±1 mA, VCE = 2 V Collector Saturation Voltage, IF = ±1 mA, IC = 2 mA V R1-2 Isolation Resistance, Vin-out = 1.0 k V Ω C1-2 Isolation Capacitance, V = 0, f = 1.0 MHz pF VCE(sat) Coupled UNITS VF CTR 1. PS2607, PS2607L, PS2608, PS2608L PARAMETERS 3.0 1.0 10 0.6 tr Rise Time , VCC = 10 V, IC = 10 mA µs 100 tf Fall Time2, VCC = 10 V, IC = 10 mA µs 100 2 CTR1 = IC1 CTR2 = IC2 IF1 IF2 2. Test Circuit for Switching Time IF1 IC1 IF2 IC2 6 5 4 6 5 4 IF PULSE INPUT ( PW = 1 ms Duty Cycle = 1/10 1 ( ) 2 1 2 PS2607 3 1 2 PS2608 3 50 Ω 4 6 PS2607 VOUT RL = 100 Ω IF PULSE INPUT VCC 5 PW = 1 ms Duty Cycle = 1/10 1 5 2 4 VCC ) 50 Ω VOUT RL = 100 Ω PS2608 California Eastern Laboratories PS2607, PS2608, PS2607L, PS2608L ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS PARAMETERS Diode IF Forward Current (DC) PD Power Dissipation IF (Peak) Peak Forward Current PW = 100 µs, Duty Cycle 1% Transistor VCEO Collector to Emitter Voltage VECO Emitter to Collector Voltage IC Collector Current PC Power Dissipation Coupled BV Isolation Voltage2 TSTG Storage Temperature TOP Operating Temperature UNITS RATINGS mA mW A 80 150 1 V V mA mW 40 6 200 200 Vr.m.s. °C °C 5000 -55 to +150 -55 to +100 Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input (Pins No. 1, 2, 3 Common) and output (Pins No. 4, 5, 6 Common). OUTLINE DIMENSIONS (Units in mm) PS2607, PS2608 PS2607L, PS2608L 10.16 MAX 6 10.16 MAX 6 4 φ1 1 φ1 3 1 7.62 6.5 3 7.62 1.34 2.54 MAX 2.54 2.54 MAX 2.54 0.9± 0.25 9.60 ± 0.4 0 to 15˚ 0.50 ± 0.10 6.5 0.05 to 0.2 3.8 MAX 0.65 2.8 MIN 4.55 MAX 3.8 MAX 4 1.34 ± 0.10 0.25 M 0.25 M PIN CONNECTIONS (Top View) PS2607, PS2607L 6 5 4 6 1. 2. 3. 4. 5. 6. 1 2 PS2608, PS2608L 3 5 4 Anode, Cathode Cathode, Anode NC Emitter Collector Base 1. 2. 3. 4. 5. 6. 1 2 3 Anode, Cathode Cathode, Anode NC Emitter Collector NC PS2607, PS2608, PS2607L, PS2608L TYPICAL PERFORMANCE CURVES (TA = 25 °C) DIODE POWER DISSIPATION vs. AMBIENT TEMPERATURE TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE 200 Transistor Power Dissipation, PC (mW) Diode Power Dissipation, PD (mW) 200 150 100 50 0 25 50 75 100 100 50 0 25 50 75 100 Ambient Temperature, TA (°C) Ambient Temperature, TA (°C) FORWARD CURRENT vs. FORWARD VOLTAGE FORWARD CURRENT vs. FORWARD VOLTAGE 100 80 TA = 100 ˚C 75 ˚C 50 ˚C 60 Forward Current, IF (mA) Forward Current, IF (mA) 150 25 ˚C 0 ˚C -25 ˚C -55 ˚C 10 1 0.1 40 20 0 -20 -40 -60 0.8 1.0 1.2 1.4 -80 -1.6 1.6 -1.2 -0.8 -0.4 0 0.4 0.8 1.2 1.6 Forward Voltage, VF (V) Forward Voltage, VF (V) COLLECTOR TO EMITTER DARK CURRENT vs. AMBIENT TEMPERATURE COLLECTOR CURRENT vs. COLLECTOR SATURATION VOLTAGE 50000 1000 10000 10 mA 40 V 24 V 10 V 5V VCE = 2 V 1000 Collector Current, IC (mA) Collector to Emitter Dark Current, ICEO (nA) 0.01 0.6 100 10 1 -60 -40 -20 0 20 40 60 80 Ambient Temperature, TA (°C) 100 5 mA 100 1 mA 0.5 mA 10 0.2 mA 1 IF = 0.1 mA 0.1 0.4 0.6 0.8 1 1.2 1.4 1.6 Collector Saturation Voltage, VCE(sat) (V) PS2607, PS2608, PS2607L, PS2608L TYPICAL PERFORMANCE CURVES (TA = 25 °C) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE NORMALIZED OUTPUT CURRENT vs. AMBIENT TEMPERATURE 1.2 ∆CTR, Normalized Output Current 140 Collector Current, IC (mA) 120 100 5 mA 80 2 mA 60 40 1 mA 20 IF = 0.5 mA 0 2 4 6 8 1.0 0.8 0.6 0.4 Normalized to 1.0 at TA = 25 ˚C IF = 1 mA, VCE = 2 V 0.2 0 10 -55 -25 0 25 50 75 Collector to Emitter Voltage, VCE (V) Ambient Temperature, TA (°C) CURRENT TRANSFER RATIO (CTR) vs. FORWARD CURRENT SWITCHING TIME vs. LOAD RESISTANCE 5000 2000 VCC = 10 V IC = 2 mA 1000 4000 ton Switching Time, t (µs) Current Transfer Ratio, CTR (%) VCE = 2 V Sample A B 3000 C D 2000 500 toff tf tr 100 50 1000 0 0.05 0.1 1 5 10 10 50 50 Forward Current, IF (mA) 500 1k 2k CTR DEGRADATION 1.2 IF = 1 mA VCE = 2 V TA = 25 ˚C 0 100 Load Resistance, RL (Ω) FREQUENCY RESPONSE CTR Test condition IF = 1 mA 1.0 TA = 25 ˚C ∆CTR, Normalized Voltage Gain, AV (dB) 100 -5 -10 -15 RL = 100 Ω -20 0.2 0.8 TA = 60 ˚C 0.6 0.4 0.2 0.5 1 2 5 10 20 50 100 200 Frequency, f (kHz) EXCLUSIVE NORTH AMERICAN AGENT FOR 0 10 102 103 104 105 106 Time (HR) RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM PRINTED IN USA ON RECYCLED PAPER -3/98 DATA SUBJECT TO CHANGE WITHOUT NOTICE