THREE PHASE DIODE＋THYRISTOR DFA75BA80/160 SanRex Power Module, DFA75BA, is complex isolated module which is designed for rash current circuit. ８０ It contains six diodes connected in a three phase bridge ３２ ２０ １７ １８ １１ 7 6 Module is also isolated type between electorode ５０.５MAX １７ 0 Module is designed very compactly. Because diode module and thyristor put together. ● This 1 ● This ３０ 2 configuration, and a thyristor connected to a direct current line. 0 5 6 7 terminal and mounting base. So you can put this ４.０ ２９ 4 3 ２０ ２０ ９３.５MAX 1 Module and other one together in a same fin. 5 ２２MAX （Application） ● Inverter for AC or DC motor control, Current stabilized 4 3 power supply, Switching power supply. Unit：㎜ 2 ●DIODE ■Maximum Ratings Symbol （Tj＝25℃ unless otherwise specified） Item Ratings DFA75BA80 DFA75BA160 Unit VRRM Repetitive Peak Reverse Voltage 800 1600 V VRSM Non-Repetitive Peak Reverse Voltage 960 1700 V Symbol Item Conditions ID Output Current (D.C.) Three phase full wave, Tc＝101℃ IFSM Surge forward current 1cycle, 50/60HZ, peak value, non-repetitive Ratings Unit 75 A 910/1000 A Operating Junction Temperature −40 to ＋150 ℃ Tstg Storage Temperature −40 to ＋125 ℃ VISO Isolation Breakdown Voltage (R.M.S.) Tj Mounting Torque 2500 V Mounting（M5） Recommended Value 1.5-2.5（15-25） 2.7（28） Terminal（M5） Recommended Value 1.5-2.5（15-25） 2.7（28） N･m （kgf･B） 150 g Ratings Unit Mass A.C. 1minute Typical Value ■Electrical Characteristics Symbol Item IRRM Repetitive Peak Reverse Current,max. Tj＝150℃，VR=VRRM VFM Forward Voltage Drop,max. Tj＝25℃，IF＝75A，Inst. measurement 1.30 V Junction to Case（TOTAL） 0.25 ℃/W 0.10 ℃/W Rth（j-c） Thermal Impedance, max. Rth（c-f） Thermal Impedance, max. SanRex Conditions 8 mA ® 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: [email protected] DFA75BA80/160 ●THYRISTOR ■Maximum Ratings Symbol （Tj＝25℃ unless otherwise specified） Ratings Item DFA75BA80 DFA75BA160 Unit VRRM Repetitive Peak Reverse Voltage 800 1600 V VRSM Non-Repetitive Peak Reverse Voltage 960 1700 V VDRM Repetitive Peak off-State Voltage 800 1600 V Symbol Item Conditions Ratings IT（AV） Average On-State Current Singl phase hulfwave. 180° condution, Tc＝99℃ ITSM Surge On-State Current １cycle, 50/60HZ, peak value, non-repetitive I2t I2t Unit 75 A A 910/1000 4150 A2S Critical Rate of Rise of On-State Current IG＝100mA， VD＝1／2VDRM， di G /dt＝0.1A/μs 150 A/μs VISO Isolation Breakdown Voltage (R.M.S.) A.C. 1minute 2500 V Tj Operating Junction Temperature −40 to ＋135 ℃ Storage Temperature −40 to ＋125 ℃ N･m （㎏f･B） di／dt Tstg Mounting Torque Mounting（M5） Recommended Value 1.5-2.5（15-25） 2.7（28） Terminal（M5） Recommended Value 1.5-2.5（15-25） 2.7（28） Mass Typical Value 150 g ■Electrical Characteristics Symbol Ratings Unit IDRM Repetitive Peak Off-State Current,max. Tj＝135℃，VD＝VDRM 60 mA IRRM Repetitive Peak Reverse Current,max. Tj＝135℃，VD＝VRRM 60 mA VTM Peak On-State Voltage,max. Tj＝25℃，ITM＝75A，Inst. measurement 1.20 V IGT Gate Trigger Current,max. VD＝6V，IT＝1A 70 mA VGT Gate Trigger Voltage,max. VD＝6V，IT＝1A 3 V dv／dt Critical Rate of Rise of OffState Voltage,min. Tj＝125℃，VD＝2／3VDRM 500 V/μs Rth（j-c） Thermal Impedance, max. Junction to Case 0.40 ℃/W Rth（c-f） Thermal Impedance, max. Case to Fin 0.10 ℃/W DIODE Maximum Forward Characteristics ５００ Forward Current I（A） F Conditions ２５０ Power Dissipation Pav（W） １０００ Item Max. DIODE Output Current vs. Power Dissipation ２００ ２００ １５０ １００ ５０ Ｔ ｊ=２５℃ ２０ １０ ０． ５ Three Phase １００ １． ０ １． ５ ２． ０ Forward Voltage Drop V（V） F ２． ５ ５０ ０ ０ １０ ２０ ３０ ４０ ５０ ６０ ７０ ８０ Output Current ID（A） SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: [email protected] DIODE Output Current vs. Allowable case Temperature １５０ Three Phase １４０ Surge Forward Current Rating （Non-Repetitive） １２００ Surge Forward Current IFSM（A） Per one element １０００ １３０ １２０ １１０ １００ ９０ ８０ ０ １０ ２０ ３０ ４０ ５０ ６０ ７０ ８００ ６０Hz ６００ ５０Hz ４００ Ｓ ｉ ｎｇ ｌ ｅｐｈａｓｅｈａ ｌ ｆｗａｖｅ Start Ｔ ｊ=２５℃ start ２００ ０ １ ８０ ２ ５ Transient Thermal Impedance θj-c（℃/W） DIODE Transient Thermal Impedance Gate Characteristics ５ １０ ２ ５ １０−１ ２ ー４ ５ １０ ２ ５ １００ ２ Time t（sec） ー３ ー２ ５ １０ ２ ５ １０１ ５ １０ Av ５ Ｔ ｊ=２５℃ ２． ０ 1 １２０ １００ ８０ ６０ ４０ ２０ ５０ Output Current（A） ６０ ７０ ８０ Transient Thermal Impedance θj-c（℃/W） １４０ ４０ we （ r１ ０W we （ r３ W） −１０℃ ） ２５℃ ２０ Maximum Gate Non-Trigger Voltage ５０ １００ ２００ ５００ １０００ ２０００ ５０００ １００００ ８０ ６０ ４０ ２０ １０ ２０ ３０ ４０ ５０ ６０ ７０ ８０ Output Current（A） １６０ ３０ Po Po １３５℃ ０ ０ ２． ５ SCR Output Current vs. Maximum Allowable case Temperature ２０ te ２ On-State Voltage Drop VTM（V） １０ Ga te SCR Output Current vs. Power Dissipation ５０ １． ５ ge Ga １００ １００ １． ０ e ra ak Gate Current（mA） ２００ ２０ Pe Peak Forward Gate Voltage（10V） １０ ０． ２ ０． １ １０ Maximum ー５ Max. １０ ０． ５ ２０ ０． ５ ５００ Allowable Case Temperature Tc（℃） １００ ５０ SCR Maximum Forward Characteristics ０ ０ ５０ Junction to Case Power Dissipation Pav（W） On-State Peak Current I（A） T １０００ １００ Gate Voltage（V） １００ ５ ２ １０−１ ５ ２ １０−２ ５ ２ １０−３ ５ ２ １０−４ ５ ２ １０−５ ー６ １０ ２ １０−２ ２ ２０ １０ Time（Cycles） Output Current ID（A） Peak Gate Current（３A） Allowable Case Temperature Tc（℃） DFA75BA80/160 SCR Transient Thermal Impedance １００ ５ ２ １０−１ ５ ２ １０−２ ５ ２ １０−３ ５ ２ １０−４ ５ ２ １０−５ ー６ １０ ２ １０−２ ２ Junction to Case Maximum ５ １０ー５ ２ ５ １０−１ ２ ５ １０ー４ ２ ５ １００ ２ Time t（sec） ５ １０ー３ ２ ５ １０１ ５ １０ー２ SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: [email protected]