ROHM BD2200GUL

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Structure
Silicon monolithic integrated circuit
Product
Power management switch IC
Type
BD2200GUL
Feature
Single channel of low on resistance (Typ = 100mΩ) N-channel MOSFET built in
Reverse-current protection when power switch off
(Under operating conditions)
Output discharge circuit
◇Absolute maximum ratings (Ta=25℃)
Parameter
Symbol
Rating
Unit
Supply voltage
VDD
-0.3 ~ 6.0
V
VIN voltage
VIN
-0.3 ~ 6.0
V
EN voltage
VEN
-0.3 ~ VDD + 0.3
V
VOUT voltage
VOUT
-0.3 ~ 6.0
V
Storage temperature
TSTG
-55 ~ 150
℃
Pd
575*1
mW
Power dissipation
*1 Mounted on 50mm * 58mm * 1.75mm glass-epoxy PCB.
Derating: 4.6mW/℃ above Ta = 25℃.
* This product is not designed for protection against radioactive rays.
◇Operating conditions
Parameter
Switch input voltage
Operating temperature
Output current
Symbol
MIN
TYP
MAX
Unit
VIN
2.7
3.3
5.5
V
TOPR
-25
25
85
°C
ILO
0
-
500
mA
REV. B
2/4
◇Electric characteristics (Unless otherwise specified, VIN = 3.3V, Ta = 25°C )
Limits
Parameter
Symbol
Unit
MIN
TYP
MAX
Condition
Operating current
IDD
-
20
30
μA
VEN = 1.2V
Standby current
ISTB
-
0.01
1
μA
VEN = 0V
VENH
1.2
-
-
V
High level input
VENL
-
-
0.4
V
Low level input
EN input current
IEN
-1.0
-
1.0
μA
VEN = 0V or VEN = 1.2V
ON resistance
RON
-
100
200
mΩ
IOUT = 500mA
Switch leakage current
ILEAK
-
0.01
1
μA
VEN = 0V, VOUT = 0V
Output turn on rise time
TON1
-
1.0
2.0
ms
Output turn on time
TON2
-
1.2
2.4
ms
Output turn off fall time
TOFF1
-
2.5
5
μs
Output turn off time
TOFF2
-
4.5
9
μs
Discharge ON resistance
RDISC
-
70
110
Ω
IOUT = -1mA, VEN = 0V
Discharge current
IDISC
-
15
20
mA
VOUT = 3.3V, VEN = 0V
EN input voltage
◇
◇
Switch output turn ON/OFF timing
VEN
50%
Test circuit
50%
TON2
VIN
TOFF2
90%
90%
VEN
VOUT
10%
TON1
RL = 10Ω
VOUT :10% → 90%
RL = 10Ω
VEN High → VOUT 90%
RL = 10Ω
VOUT :90% → 10%
RL = 10Ω
VEN Low → VOUT 10%
10%
TOFF1
REV. B
VIN
VOUT
VIN
VOUT
EN
GND
CL
RL
3/4
◇Block diagram
◇Pin number, Pin name
VIN
VOUT
charge
pump
PIN number
Pin Name
A3
GND
Ground
B2, B3
VOUT
Switch output
A1, B1
VIN
Switch input
A2
EN
Enable input
GND
EN
◇Package outline
A B A
Lot No.
VCSP50L1 (Unit: mm)
REV. B
Description
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○Cautions on use
(1) Absolute Maximum Ratings
An excess in the absolute maximum ratings, such as supply voltage, temperature range of operating conditions, etc.,
can break down devices, thus making impossible to identify breaking mode such as a short circuit or an open circuit. If
any special mode exceeding the absolute maximum ratings is assumed, consideration should be given to take physical
safety measures including the use of fuses, etc.
(2) Power supply and GND line
Design PCB pattern to provide low impedance for the wiring between the power supply and the GND lines. Pay
attention to the interference by common impedance of layout pattern when there are plural power supplies and
GND lines. Especially, when there are GND pattern for small signal and GND pattern for large current included the
external circuits, separate each GND pattern. Furthermore, for all power supply terminals to ICs, mount a capacitor
between the power supply and the GND terminal. At the same time, in order to use a capacitor, thoroughly check to be
sure the characteristics of the capacitor to be used present no problem including the occurrence of capacity dropout at a
low temperature, thus determining the constant.
(3) GND voltage
Make setting of the potential of the GND terminal so that it will be maintained at the minimum in any operating
state. Furthermore, check to be sure no terminals are at a potential lower than the GND voltage including an
actual electric transient.
(4) Short circuit between terminals and erroneous mounting
In order to mount ICs on a set PCB, pay thorough attention to the direction and offset of the ICs. Erroneous
mounting can break down the ICs. Furthermore, if a short circuit occurs due to foreign matters entering between
terminals or between the terminal and the power supply or the GND terminal, the ICs can break down.
(5) Operation in strong electromagnetic field
Be noted that using ICs in the strong electromagnetic field can malfunction them.
(6) Input terminals
In terms of the construction of IC, parasitic elements are inevitably formed in relation to potential. The operation of
the parasitic element can cause interference with circuit operation, thus resulting in a malfunction and then
breakdown of the input terminal. Therefore, pay thorough attention not to handle the input terminals, such as to
apply to the input terminals a voltage lower than the GND respectively, so that any parasitic element will operate.
Furthermore, do not apply a voltage to the input terminals when no power supply voltage is applied to the IC. In
addition, even if the power supply voltage is applied, apply to the input terminals a voltage lower than the power
supply voltage or within the guaranteed value of electrical characteristics.
(7) External capacitor
In order to use a ceramic capacitor as the external capacitor, determine the constant with consideration given to a
degradation in the nominal capacitance due to DC bias and changes in the capacitance due to temperature, etc.
(8) Thermal design
Perform thermal design in which there are adequate margins by taking into account the power dissipation (PD) in
actual states of use.
REV. B
Notice
Notes
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The content specified herein is for the purpose of introducing ROHM's products (hereinafter
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which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
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