RB521CS-30 SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 30 Volts Forward Current - 100 mAmpere FEATURES ● Low Turn-on Voltage ● Fast Switching ● Ultra-small surface mount package. ● PN Junction Guard Ring for Transient and ESD Protection SOD-923 Dim A B C D H J K MECHANICAL DATA Max 0.85 0.65 0.43 0.25 0.17 0.13 1.15 PIN 1. CATHODE 2. ANODE ● Case: SOD-923, Molded Plastic ● Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 ● Polarity: Cathode Band Maximum Ratings Min 0.75 0.55 0.34 0.15 0.07 0.11 0.95 2 Anode 1 Cathode @TA=25°C unless otherwise specified R ati n g S y m bol V al u e V RM 30 V Continuous Reverse Voltage VR 30 V Continuous Forward Current IF 100 mA I FSM 0.5 A Operating Junction Temperature Range TJ 125 °C Storage Temperature Range Tstg -40 to +125 °C Peak Reverse Voltage Non-repetitive Peak Forward Current, 60Hz Half Sine-Wave Electrical Characteristics Un i t s @TA=25°C unless otherwise specified S y m bol Conditions Mi n Typ Max Un i t s Forward Voltage (Note 1) VF I F = 10mA - - 0.35 V Forward Voltage (Note 1) VF I F = 20mA - - 0.40 V Reverse Leakage Current IR V R = 10V - - 10 uA Par ameter Note 1. Short duration pulse test to avoid self-heating effect RB521CS-30 RATINGS AND CHARACTERISTIC CURVES 100 10000 1000 f=1MHｚ Ta=75℃ Ta=-25℃ 1 Ta=25℃ 0.1 0.01 1000 0.001 Ta=75℃ 100 Ta=25℃ 10 1 Ta=-25℃ 0.1 0.01 0 100 200 300 400 500 600 10 20 0 30 5 10 PEAK SURGE FORWARD CURRENT:IFSM(A) 1cyc 15 8.3ms 10 5 10 15 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 20 Ifsm 10 1 0 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS PEAK SURGE FORWARD CURRENT:IFSM(A) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 10 Ta=125℃ 10 PEAK SURGE FORWARD CURRENT:IFSM(A) 100 REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(mA) Ta=125℃ Ifsm 8.3ms 8.3ms 1cyc 5 Ifsm t 5 AVE:3.90A 0 0 0 1 10 100 TIME:t(ms) IFSM-t CHARACTERISTICS 0.1 0.1 1000 Rth(j-a) 0.08 Mounted on epoxy board 100 IF=100mA IM=10mA 1ms D=1/2 REVERSE POWER DISSIPATION:PR (W) FORWARD POWER DISSIPATION:Pf(W) 0.08 Rth(j-c) DC 0.06 Sin(θ＝180) 0.04 0.06 DC Sin(θ＝180) 0.02 0.02 time D=1/2 0.04 300us 0 10 0.001 0.1 10 0 0 1000 TIME:t(s) Rth-t CHARACTERISTICS 0.1 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 0.3 0.2 0 10 20 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 0.3 0A 0V Io t DC 0.2 T VR D=t/T VR=15V Tj=125℃ D=1/2 0.1 Sin(θ＝180) 0 0 25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 125 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 1 100 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS IFSM DISRESION MAP TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 10 0A 0V 0.2 Io t DC T VR D=t/T VR=15V Tj=125℃ D=1/2 0.1 Sin(θ＝180) 0 0 25 50 75 100 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 125 30