Small Signal Transistor MMBT2222A-G (NPN) RoHS Device Features SOT-23 -NPN silicon epitaxial planar transistor for switching and amplifier application. 0.119(3.00) 0.110(2.80) 3 0.056(1.40) Mechanical data 0.047(1.20) 1 -Case: SOT-23, molded plastic. 2 0.083(2.10) 0.066(1.70) -Terminals: solderable per MIL-STD-750, method 2026. 0.006(0.15) 0.002(0.05) -Approx. weight: 0.008 grams 0.044(1.10) 0.103(2.60) 0.035(0.90) 0.086(2.20) 0.006(0.15) max 0.020(0.50) 0.007(0.20) min 0.013(0.35) Dimensions in inches and (millimeter) Maximum Ratings and Thermal Characteristics (at Ta=25 OC unless otherwise noted) Parameter Symbol Value Units Collector-Base voltage VCBO 75 V Collector-Emitter voltage VCEO 40 V Emitter-Base voltage VEBO 6.0 V IC 600 mA Ptot 225 1.9 mW mW/ OC Ptot 300 2.4 mW mW/ OC RθJA 556 417 TJ 150 O C TSTG -55 to +150 O C Collector current O Power dissipation on FR-5 board(1), TA=25 Derate above 25 OC Power dissipation on aluminum substrate(2), TA=25 Derate above 25 OC Thermal resistance, junction to ambient air C FR-5 board Aluminum substrate Junction temperature Storage temperature range O C O C/mW Notes: 1. FR-5=1.0×0.75×0.062 in. 2. Alumina=0.4×0.3×0.024 in. 99.5% alumina. REV:A Page 1 QW-BTR30 Comchip Technology CO., LTD. Small Signal Transistor Electrical Characteristics (@TA=25°C unless otherwise noted) Parameter DC current gain Symbol hFE Conditions Min. VCE=10V, IC=0.1mA VCE=10V, IC=1mA VCE=10V, IC=10mA VCE=10V, IC=10mA, TA=-55 VCE=10V, IC=150mA VCE=10V, IC=500mA VCE=1V, IC=150mA O C 35 50 75 35 100 40 50 Max. Units 300 Collector-Base breakdown voltage V(BR)CBO IC=10μA, IE=0 75 V Collector-Emitter breakdown voltage V(BR)CEO IC=10mA, IB=0 40 V Emitter-Base breakdown voltage V(BR)EBO IC=10μA, IC=0 6 V Collector-Emitter saturation voltage VCEsat IC=150mA, IB=15mA IC=500mA, IB=50mA Base-Emitter saturation voltage VBEsat IC=150mA, IB=15mA IC=500mA, IB=50mA Collector cut-off current ICEX VEB=3V, VCE=60V Collector cut-off current ICBO VCB=60V, IE=0 VCB=50V, IE=0, TA=125 Base cut-off current IBL VEB=3V, VCE=60V Emitter cut-off current IEBO VEB=3VDC, IC=0 Current gain-bandwidth product fT 0.6 O C VCE=20V, IC=20mA, f=100MHz 0.3 1 V 1.2 2 V 10 nA 10 10 nA μA 20 nA 100 nA 300 MHz Output capacitance Cobo VCB=10V, f=1MHz, IE=0 8 pF Input capacitance Cibo VEB=0.5V, f=1MHz, IC=0 25 pF Noise figure NF VCE=10V, IC=100μA, RS=1kΩ, f=1kHz 4 dB Input impedance hie VCE=10V, IC=1mA, f=1kHz VCE=10V, IC=10mA, f=1kHz 2 0.25 8 1.25 kΩ Small signal current gain hfe VCE=10V, IC=1mA, f=1kHz VCE=10V, IC=10mA, f=1kHz 50 75 300 375 Voltage feedback ratio hre VCE=10V, IC=1mA, f=1kHz VCE=10V, IC=10mA, f=1kHz Output admittance hoe VCE=10V, IC=1mA, f=1kHz VCE=10V, IC=10mA, f=1kHz 5 25 8 4 ×10 -4 35 200 μS rb'CC IE=20mA, VCB=20V, f=31.8MHz 150 pS Delay time (see fig.1) td IB1=15mA, IC=150mA, VCC=30V, VBE=-0.5V 10 nS Rise time (see fig.1) tr IB1=15mA, IC=150mA, VCC=30V, VBE=-0.5V 25 nS Storage time (see fig.2) ts IB1=IB2=15mA, IC=150mA, VCC=30V 225 nS Fall time (see fig.2) tf IB1=IB2=15mA, IC=150mA, VCC=30V 60 nS Collector base time constant REV:A Page 2 QW-BTR30 Comchip Technology CO., LTD. Small Signal Transistor Switching time equivalent test circuit Figure 1. Turn-on Time +30V 1.0 to 100μS, duty cycle=2% 200Ω +16V 0 Cs* <10pF 1kΩ -2V Scope rise time<4nS *Total shunt capacitance of test jig, connectors and oscilloscope <2nS Figure 2. Turn-off Time +30V 1.0 to 100μS, duty cycle=2% 200Ω +16V 0 Cs* <10pF 1kΩ -14V <20nS -4V REV:A Page 3 QW-BTR30 Comchip Technology CO., LTD.