2N4401 Vishay Semiconductors New Product formerly General Semiconductor Small Signal Transistor (NPN) TO-226AA (TO-92) 0.142 (3.6) min. 0.492 (12.5) 0.181 (4.6) 0.181 (4.6) Features • NPN Silicon Epitaxial Transistor for switching and amplifier applications. • As complementary type, the PNP transistor 2N4403 is recommended. • On special request, this transistor is also manufactured in the pin configuration TO-18. • This transistor is also available in the SOT-23 case with the type designation MMBT4401, Mechanical Data max. ∅ 0.022 (0.55) 0.098 (2.5) Dimensions in inches and (millimeters) Case: TO-92 Plastic Package Weight: approx. 0.18g Packaging Codes/Options: E6/Bulk – 5K per container, 20K/box E7/4K per Ammo mag., 20K/box Bottom View Maximum Ratings & Thermal Characteristics Parameter Ratings at 25°C ambient temperature unless otherwise specified. Symbol Value Unit Collector-Emitter Voltage VCEO 40 V Collector-Base Voltage VCBO 60 V Emitter-Base Voltage VEBO 6.0 V IC 600 mA Power Dissipation at TA = 25°C Derate above 25°C Ptot 625 5.0 mW mW/°C Power Dissipation at TC = 25°C Derate above 25°C Ptot 1.5 12 mW mW/°C Thermal Resistance Junction to Ambient Air RΘJA 200 °C/W Thermal Resistance Junction to Case RΘJC 83.3 °C/W Junction Temperature Tj 150 °C Storage Temperature Range TS –55 to +150 °C Collector Current Document Number 88117 08-May-02 www.vishay.com 1 2N4401 Vishay Semiconductors formerly General Semiconductor Electrical Characteristics (T = 25°C unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit V(BR)CBO IC = 0.1 mA, IE = 0 60 — — V Collector-Emitter Breakdown Voltage V(BR)CEO IC = 1 mA, IB = 0 40 — — V Emitter-Base Breakdown Voltage V(BR)EBO IE = 0.1 mA, IC = 0 6.0 — — V Collector-Emitter Saturation Voltage VCEsat IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA — — — — 0.40 0.75 V Base-Emitter Saturation Voltage VBEsat IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA 0.75 — — — 0.95 1.20 V Collector Cutoff Current ICEV VEB = 0.4 V, VCE = 35 V — — 100 nA Base Cutoff Current IBEV VEB = 0.4 V, VCE = 35 V — — 100 nA DC Current Gain hFE VCE = 1 V, IC = 0.1 mA VCE = 1 V, IC = 1 mA VCE = 1 V, IC = 10 mA VCE = 1 V, IC = 150 mA VCE = 2 V, IC = 500 mA 20 40 80 100 40 — — — — — — — — 300 — — Input Impedance hie VCE = 10 V, IC = 1 mA f = 1 kHz 1.0 — 15 kΩ Voltage Feedback Ratio hre VCE = 10 V, IC = 1 mA f = 1 kHz 0.1 • 10-4 — 8 • 10-4 — Current Gain-Bandwidth Product fT VCE = 5 V, IC = 20 mA f = 100 MHz 250 — — MHz Collector-Base Capacitance CCBO VCB = 5 V, IE = 0, f = 1.0 MHz — — 6.5 pF Emitter-Base Capacitance CEBO VCB = 0.5 V, I C = 0, f = 1.0 MHz — — 30 pF Small Signal Current Gain hfe VCE = 10 V, I C = 1 mA, f = 1 kHz 40 — 500 — Output Admittance hoe VCE = 10 V, I C = 1 mA, f = 1 kHz 1.0 — 30 µS J Collector-Base Breakdown Voltage (1) www.vishay.com 2 Document Number 88117 08-May-02 2N4401 Vishay Semiconductors formerly General Semiconductor Electrical Characteristics (T Parameter J = 25°C unless otherwise noted) Symbol Test Condition Min Typ Max Unit Delay Time (see fig. 1) td I C = 150 mA, IB1 = 15 mA VCC = 30 V, VBE = 2.0 mA — — 15 ns Rise Time (see fig. 1) tr I C = 150 mA, IB1 = 15 mA VCC = 30 V, VBE = 2.0 mA — — 20 ns Storage Time (see fig. 2) ts IB1 = IB2 = 15 mA VCC = 30 V, IC = 150 mA — — 225 ns Fall Time (see fig. 2) tf IB1 = IB2 = 15 mA VCC = 30 V, IC = 150 mA — — 30 ns Switching Time Equivalent Test Circuit Figure 1 - Turn-ON Time 1.0 to 100 µs, DUTY CYCLE ≈ 2% Figure 2 - Turn-OFF Time +30V 1.0 to 100 µs, DUTY CYCLE ≈ 2% 200Ω +30V 200Ω +16 V +16 V 0 0 1kΩ -2 V C S* < 10 pF < 2 ns Document Number 88117 08-May-02 Scope rise time < 4ns *Total shunt capacitance of test jig, connectors and oscilloscope C S* < 10 pF 1kΩ -14 V < 20 ns -4 V www.vishay.com 3