HMC649


Design Assistance

Customised Pack Sizes / Qtys

Assembly Assistance

Support for all industry recognised
supply formats:

Die handling consultancy

Hi-Rel die qualification

Hot & Cold die probing

Electrical test & trimming
o Waffle Pack
o Gel Pak
o Tape & Reel

Onsite storage, stockholding &
scheduling

100% Visual Inspection
o MIL-STD 883 Condition A
o MIL-STD 883 Condition A

On-site failure analysis

Bespoke 24 Hour monitored
storage systems for secure long
term product support

On-site failure analysis
Contact
[email protected]
For price, delivery and to place orders
HMC649
www.analog.com
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Hittite Microwave Corporation
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HMC649
v01.0208
PHASE SHIFTERS - DIGITAL - CHIP
3
GaAs MMIC 6-BIT DIGITAL
PHASE SHIFTER, 3 - 6 GHz
Typical Applications
Features
The HMC649 is ideal for:
Low RMS Phase Error: 3°
• EW Receivers
Low Insertion Loss: 6.5 dB
• Weather & Military Radar
High Linearity: +44 dBm
• Satellite Communications
Positive Control Logic
• Beamforming Modules
360° Coverage, LSB = 5.625°
Die Size: 4.5 x 1.9 x 0.1 mm
• Phase Cancellation
Functional Diagram
General Description
The HMC649 is a 6-bit digital phase shifter
die which is rated from 3 to 6 GHz, providing 360
degrees of phase coverage, with a LSB of 5.625
degrees. The HMC649 features low RMS phase
error of 3 degrees and extremely low insertion loss
variation of ±0.5 dB across all phase states. This
high
accuracy phase shifter is controlled with
positive control logic of 0/+5V, and is internally
matched to 50 Ohms with no external components.
Electrical Specifi cations, TA = +25° C,
Vss= -5V, Vdd= +5V, Control Voltage = 0/ +5V, 50 Ohm System
Parameter
Frequency Range
Insertion Loss*
Min.
Typ.
Max.
Units
6
GHz
6.5
9
dB
3
Input Return Loss*
12
dB
Output Return Loss*
10
dB
Phase Error*
±5
RMS Phase Error
Insertion Loss Variation*
+15 / -20
3
deg
±0.5
dB
Input Power for 1 dB Compression
29
dBm
Input Third Order Intercept
44
dBm
Control Voltage Current
35
250
μA
Bias Control Current
5
15
mA
*Note: Major States Shown
3 - 44
deg
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC649
v01.0208
GaAs MMIC 6-BIT DIGITAL
PHASE SHIFTER, 3 - 6 GHz
Insertion Loss, Major States Only
Normalized Loss, Major States Only
0
4
3
-4
-6
-8
-10
2
3
1
0
-1
-2
-3
-12
-4
2
3
4
5
6
7
2
3
FREQUENCY (GHz)
Input Return Loss, Major States Only
6
7
6
7
6
7
20
15
PHASE ERROR (degrees)
-5
RETURN LOSS (dB)
5
Phase Error, Major States Only
0
-10
-15
-20
-25
10
5
0
-5
-10
-15
-30
-20
2
3
4
5
6
7
2
3
FREQUENCY (GHz)
4
5
FREQUENCY (GHz)
Output Return Loss, Major States Only
Relative Phase Shift
Major States, Including All Bits
0
RELATIVE PHASE SHIFT (degrees)
400
-5
RETURN LOSS (dB)
4
FREQUENCY (GHz)
PHASE SHIFTERS - DIGITAL - CHIP
NORMALIZED LOSS (dB)
INSERTION LOSS (dB)
-2
-10
-15
-20
-25
-30
350
300
250
200
150
100
50
0
2
3
4
5
FREQUENCY (GHz)
6
7
2
3
4
5
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3 - 45
HMC649
v01.0208
GaAs MMIC 6-BIT DIGITAL
PHASE SHIFTER, 3 - 6 GHz
Input IP3, Major States Only
30
60
25
55
20
50
15
IP3 (dBm)
RMS
AVERAGE
MAX
10
5
40
35
30
-5
25
20
3
3.5
4
4.5
5
5.5
6
3
3.5
FREQUENCY (GHz)
4
4.5
5
5.5
6
5.5
6
5.5
6
FREQUENCY (GHz)
Input IP2, Major States Only
Input P1dB, Major States Only
40
120
110
35
P1dB (dBm)
100
90
80
30
25
70
60
20
3
3.5
4
4.5
5
5.5
3
6
3.5
FREQUENCY (GHz)
0
15
-2
INSERTION LOSS (dB)
RELATIVE PHASE SHIFT (degrees)
4.5
5
Insertion Loss vs. Temperature,
Major States Only
20
+25C
+85C
-55C
10
4
FREQUENCY (GHz)
RMS Phase Error vs. Temperature
5
0
-5
-4
-6
-8
-10
-10
-12
3
3.5
4
4.5
5
FREQUENCY (GHz)
3 - 46
45
0
-10
IP2 (dBm)
PHASE SHIFTERS - DIGITAL - CHIP
3
RELATIVE PHASE SHIFT (degrees)
Relative Phase Shift,
RMS, Average, Max, All States
5.5
6
3
3.5
4
4.5
5
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC649
v01.0208
GaAs MMIC 6-BIT DIGITAL
PHASE SHIFTER, 3 - 6 GHz
Absolute Maximum Ratings
10
PHASE ERROR (degrees)
3, 4, 5 GHz
5
0
-5
-10
-15
Input Power (RFIN)
32 dBm (T= +85 °C)
Bias Voltage Range (Vdd)
-0.2 to +12V
Bias Voltage Range (Vss)
+0.2 to -12V
Channel Temperature (Tc)
150 °C
Thermal Resistance
(channel to die bottom)
140 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-55 to +85 °C
6 GHz
-20
0
45
90
135
180
225
270
315
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
360
STATE (degrees)
Bias Voltage & Current
Truth Table
Control Voltage Input
Bit 1
Bit 2
Bit 3
Bit 4
Bit 5
Bit 6
Phase Shift
(Degrees)
RFIN - RFOUT
0
0
0
0
0
0
Reference*
1
0
0
0
0
0
5.625
0
1
0
0
0
0
11.25
0
0
1
0
0
0
22.5
0
0
0
1
0
0
45.0
0
0
0
0
1
0
90.0
0
0
0
0
0
1
180.0
1
1
1
1
1
1
354.375
Vdd
Idd
5.0
5.4mA
Vss
Iss
-5.0
5.4mA
Control Voltage
State
Bias Condition
Low (0)
0 to 0.2 Vdc
High (1)
Vdd ±0.2 Vdc @ 35 μA Typ.
Any combination of the above states will provide a phase shift
approximately equal to the sum of the bits selected.
*Reference corresponds to monotonic setting
3
PHASE SHIFTERS - DIGITAL - CHIP
Phase Error vs. State
Pad Descriptions
Pad Number
Function
Description
1
RFIN
This port is DC coupled and matched to 50 Ohms.
2, 11
GND
These pads and die bottom
must be connected to RF/DC ground.
3
Vdd
Supply voltage.
4 - 6,
8 - 10
BIT1, BIT2, BIT3,
Control Input. See truth table
and control voltage tables.
BIT4, BIT5. BIT6
7
Vss
Supply voltage.
12
RFOUT
This port is DC coupled and matched to 50 Ohms.
Interface Schematic
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3 - 47
HMC649
v01.0208
GaAs MMIC 6-BIT DIGITAL
PHASE SHIFTER, 3 - 6 GHz
Outline Drawing
PHASE SHIFTERS - DIGITAL - CHIP
3
3 - 48
Die Packaging Information [1]
Standard
Alternate
GP-1 (Gel Pack)
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
NOTES:
1. ALL DIMENSIONS IN INCHES (MILLIMETERS)
2. DIE THICKNESS IS 0.004
3. BACKSIDE METALLIZATION: GOLD
4. BACKSIDE METAL IS GROUND
5. BOND PADS METALLIZATION: GOLD
6. OVERALL DIE SIZE ±0.002
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC649
v01.0208
GaAs MMIC 6-BIT DIGITAL
PHASE SHIFTER, 3 - 6 GHz
Assembly Diagram
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag
for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize
inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the
chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with electrically conductive epoxy. The mounting surface should be clean
and fl at.
PHASE SHIFTERS - DIGITAL - CHIP
3
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the
perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of
150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum
level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or
substrate. All bonds should be as short as possible <0.31mm (12 mils).
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3 - 49