High-reliability discrete products and engineering services since 1977 3N201-3N203 DUAL GATE MOSFET VHF AMPLIFIER FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Rating Drain-source voltage Symbol Value Unit VDS 25 Vdc 30 Vdc 50 mAdc ±10 mAdc VDG1 Drain-gate voltage VDG2 Drain current ID IG1 Gate current IG2 Total device dissipation @ TA = 25°C Derate above 25°C PD 360 2.4 mW mW/°C Total device dissipation @ TC = 25°C Derate above 25°C PD 1.2 8.0 W mW/°C Lead temperature TL 300 °C Junction temperature range TJ -65 to 175 °C Storage temperature range Tstg -65 to 175 °C ELECTRICAL CHARACTERISTICS (TC = 25°C) Characteristic Symbol Min Typ Max 25 - - ±6.0 ±12 ±30 ±6.0 ±12 ±30 Unit OFF CHARACTERISTICS Drain-source breakdown voltage (ID = 10µAdc, VS = 0, VG1S = VG2S = -5.0Vdc) V(BR)DSX Gate 1-source breakdown voltage (1) (IG1 = ±10mAdc, VG2S = VDS = 0) V(BR)G1SO Gate 2-source breakdown voltage (1) (IG2 = ±10mAdc, VG1S = VDS = 0) V(BR)G2SO Vdc Vdc Vdc Gate 1 leakage current (VG1S = ±5.0Vdc, VG2S = VDS = 0) (VG1S = -5.0Vdc, VG2S = VDS = 0, TA = 150°C) IG1SS - ±0.040 - ±10 -10 nAdc µAdc Gate 2 leakage current (VG2S = ±5.0Vdc, VG1S = VDS = 0) (VG2S = -5.0Vdc, VG1S = VDS = 0, TA = 150°C) IG2SS - ±0.050 - ±10 -10 nAdc µAdc Gate 1 to source cutoff voltage (VDS = 15Vdc, VG2S = 4.0Vdc, ID = 20µAdc) VG1S(off) -0.5 -1.5 -5.0 Gate 2 to source cutoff voltage (VDS = 15Vdc, VG1S = 0, ID = 20µAdc) VG2S(off) -0.2 -1.4 -5.0 6.0 3.0 13 11 30 15 Vdc Vdc ON CHARACTERISTICS Zero-gate voltage drain current (2) (VDS = 15Vdc, VG1S = 0, VG2S = 4.0Vdc) 3N201, 3N202 3N203 IDSS mAdc Rev. 20120705 High-reliability discrete products and engineering services since 1977 3N201-3N203 DUAL GATE MOSFET VHF AMPLIFIER ELECTRICAL CHARACTERISTICS (TC = 25°C) Characteristic Symbol Min Typ Max Unit mmhos SMALL SIGNAL CHARACTERISTICS Forward transfer admittance(3) (VDS = 15Vdc, VG2S = 4.0Vdc, VG1S = 0, f = 1.0kHz) 3N201, 3N202 3N203 |Yfs| Input capacitance (VDS = 15Vdc, VG2S = 4.0Vdc, ID = IDSS, f = 1.0MHz) Ciss Reverse transfer capacitance (VDS = 15Vdc, VG2S = 4.0Vdc, ID = 10mAdc, f = 1.0MHz) Crss Output capacitance (VDS = 15Vdc, VG2S = 4.0Vdc, ID = IDSS, f = 1.0MHz) Coss 8.0 7.0 12.8 12.5 20 15 - 3.3 - 0.005 0.014 0.03 - 1.7 - pF pF pF FUNCTIONAL CHARACTERISTICS Noise figure (VDD = 18Vdc, VGG = 7.0Vdc, f = 200MHz) (VDD = 18Vdc, VGG = 6.0Vdc, f = 45MHz) 3N201 3N203 NF - 1.8 5.3 4.5 6.0 Common source power gain (VDD = 18Vdc, VGG = 7.0Vdc, f = 200MHz) (VDD = 18Vdc, VGG = 6.0Vdc, f = 45MHz) (VDD = 18Vdc, fLO = 245MHz, fRF = 200MHz) 3N201 3N203 3N202 Gps 15 20 15 20 25 19 25 30 25 Bandwidth (VDD = 18Vdc, VGG = 7.0Vdc, f = 200MHz) (VDD = 18Vdc, fLO = 245MHz, fRF = 200MHz) (VDD = 18Vdc, VGG = 6.0Vdc, f = 45MHz) 3N201 3N202 3N203 5.0 4.5 3.0 - 9.0 7.5 6.0 Gain control gate-supply voltage (4) (VDD = 18Vdc, ΔGps = -30dB, f = 200MHz) (VDD = 18Vdc, ΔGps = -30dB, f = 45MHz) 3N201 3N203 0 0 -1.0 -0.6 -3.0 -3.0 Gc(5) BW VGG(GC) dB dB MHz Vdc Note 1: All gate breakdown voltages are measured while the device is conducting rated gate current. This ensures that the gate-voltage limiting network is functioning properly. Note 2: Pulse test: pulse width = 300µs. Duty cycle ≤ 2.0%. Note 3: This parameter must be measured with bias voltages applied for less than 5 seconds to avoid overheating. Note 4: ΔGps is defined as the change from the value at VGG = 7.0V and VGG = 6.0V. Note 5: Power gain conversion. Rev. 20120705 High-reliability discrete products and engineering services since 1977 3N201-3N203 DUAL GATE MOSFET VHF AMPLIFIER MECHANICAL CHARACTERISTICS Case: TO-72 Marking: Body painted, alpha-numeric Pin out: See below Rev. 20120705 High-reliability discrete products and engineering services since 1977 3N201-3N203 DUAL GATE MOSFET VHF AMPLIFIER Rev. 20120705 High-reliability discrete products and engineering services since 1977 3N201-3N203 DUAL GATE MOSFET VHF AMPLIFIER Rev. 20120705 High-reliability discrete products and engineering services since 1977 3N201-3N203 DUAL GATE MOSFET VHF AMPLIFIER Rev. 20120705 High-reliability discrete products and engineering services since 1977 3N201-3N203 DUAL GATE MOSFET VHF AMPLIFIER Rev. 20120705