1821bd3d794fb8d8cfb51d78c4cf7270

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-323 Plastic-Encapsulate Diodes
CESD12VD3
Uni-direction ESD Protection Diode
DESCRIPTION
SOD-323
Designed to protect voltage sensitive electronic components from ESD and other
transients. Excellent clamping capability, low leakage, and fast response time provide
best in class protection on designs that are exposed to ESD.
The combination of small size, high level of ESD protection makes them a flexible
solution for applications such as Digital cameras,cellular phones, and MP3 Players. It
is designed to replace multiplayer varistors (MLV) in consumer equipments
applications such as mobile phone, notebook, PAD, STB, LCD TV etc.
FEATURES

Uni-directional ESD protection of one line

Fast response time

Reverse stand−off voltage: 12V

JESD22-A114-B ESD Rating of class 3B per human

Low reverse clamping voltage

Low leakage current

Excellent package:1.70mm×1.30mm×1.00mm
body model

IEC 61000-4-2 Level 4 ESD protection
APPLICATIONS

Computers and peripherals

Portable electronics

Digital Cameras

Mp3 Players

Audio and video equipment

Other electronics equipments communi-

Cellular handsets and accessories
cation systems
MARKING
ZC = Device code
Solid dot = Green molding compound device,if none, the
normal device
The marking bar indicates the cathode
Front side
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CHANGJIANG ELEC.TECH.
CESD12VD3
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Parameter
Symbol
IEC 61000-4-2 ESD Voltage
Air Model
Contact Model
JESD22-A114-B ESD Voltage
Per Human Body Model
ESD Voltage
VESD(1)
±25
±16
kV
±0.4
(2)
220
W
(2)
9
A
PPP
Peak Pulse Current
Unit
±25
Machine Model
Peak Pulse Power
Limit
IPP
Lead Solder Temperature − Maximum (10 Second Duration)
TL
260
℃
Junction Temperature
Tj
150
℃
Tstg
-55 ~ +150
℃
Storage Temperature Range
(1).Device stressed with ten non-repetitive ESD pulses.
(2).Non-repetitive current pulse 8/20µs exponential decay waveform according to IEC61000-4-5.
ESD standards compliance
IEC61000-4-2 Standard
JESD22-A114-B Standard
Contact Discharge
Air Discharge
ESD Class
Human Body Discharge V
Level
Test Voltage kV
Level
Test Voltage kV
0
0~249
1
2
1
2
2
4
2
4
1A
1B
1C
250~499
500~999
1000~1999
3
6
3
8
4
8
4
15
2
3A
3B
2000~3999
4000~7999
8000~15999
ESD pulse waveform according to IEC61000-4-2
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8/20μs pulse waveform according to IEC 61000-4-5
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CHANGJIANG ELEC.TECH.
CESD12VD3
ELECTRICAL PARAMETER
Symbol
Parameter
VC
Clamping Voltage @ IPP
IPP
Peak Pulse Current
VBR
Breakdown Voltage @ IT
IT
Test Current
IR
Reverse Leakage Current @ VRWM
VRWM
Reverse Standoff Voltage
VF
Forward [email protected] IF
IF
Forward Current
V-I characteristics for a uni-directional TVS
ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)
Parameter
Reverse stand off voltage
Reverse leakage current
Breakdown voltage
Clamping voltage
Symbol
Test conditions
Min
Typ
Max
Unit
12
V
1
μA
16.5
V
IPP=9A
24
V
0.9
V
(1)
VRWM
IR
V(BR)
(2)
VC
VRWM=12V
IT=1mA
Forward voltage
VF
IF=10mA
Junction capacitance
CJ
VR=0V,f=1MHz
13.3
45
pF
(1).Other voltages available upon request.
(2).Non-repetitive current pulse 8/20μs exponential decay waveform according to IEC61000-4-5
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CHANGJIANG ELEC.TECH.
CESD12VD3
TYPICAL CHARACTERISTICS
Forward Characteristics
100
Reverse Characteristics
100
Pulsed
Pulsed
(mA)
REVERSE CURRENT IR
T=
a 25
℃
=1
00
℃
a
1
T
FORWARD CURRENT
IF
(mA)
80
10
0.1
Ta=100℃
60
Ta=25℃
40
20
0.01
200
300
400
500
600
FORWARD VOLTAGE
VC ——
30
700
VF
800
900
0
1000
0
5
10
15
REVERSE VOLTAGE
(mV)
IPP
20
VR
25
30
(V)
Capacitance Characteristics
60
Ta=25℃
Ta=25℃
tp=8/20us
f=1MHz
JUNCTION CAPACITANCE
CJ (pF)
CLAMPING VOLTAGE VC(V)
50
25
20
40
30
15
20
10
0
2
4
6
8
10
10
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0
3
6
REVERSE VOLTAGE
REVERSE PEAK PULSE CURRENT IPP(A)
4
9
VR
12
(V)
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CHANGJIANG ELEC.TECH.
CESD12VD3
PACKAGE OUTLINE AND PAD LAYOUT INFORMATION
SOD-323 Package Outline Dimensions
SOD-323 Suggested Pad Layout
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CHANGJIANG ELEC.TECH.
CESD12VD3
TAPE AND REEL INFORMATION
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