SOD-723 Plastic-Encapsulate Diodes CESD5V0D7 Uni

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-723 Plastic-Encapsulate Diodes
CESD5V0D7
Uni-direction ESD Protection Diode
DESCRIPTION
SOD-723
Designed to protect voltage sensitive electronic components from ESD and other
transients. Excellent clamping capability, low leakage, and fast response time provide
best in class protection on designs that are exposed to ESD.
The combination of small size, high level of ESD protection makes them a flexible
solution for applications such as HDMI, Display Port TM, and MDDI interfaces. It is
designed to replace multiplayer varistors (MLV) in consumer equipments applications
such as mobile phone, notebook, PAD, STB, LCD TV etc.
FEATURES

Uni-directional ESD protection of one line

Fast response time

Reverse stand−off voltage: 5V

JESD22-A114-B ESD Rating of class 3B per human

Low reverse clamping voltage

Low leakage current

Excellent package:1.00mm×0.60mm×0.55mm
body model

IEC 61000-4-2 Level 4 ESD protection
APPLICATIONS

Computers and peripherals

Portable electronics

Audio and video equipment

Other electronics equipments communi-

Cellular handsets and accessories
cation systems
MARKING
E2 = Device code
The marking bar indicates the cathode
Front side
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CESD5V0D7
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Parameter
Symbol
IEC 61000-4-2 ESD Voltage
Air Model
Contact Model
JESD22-A114-B ESD Voltage
Per Human Body Model
ESD Voltage
VESD(1)
±25
kV
±16
±0.4
(2)
170
W
(2)
13
A
PPP
Peak Pulse Current
Unit
±25
Machine Model
Peak Pulse Power
Limit
IPP
Lead Solder Temperature − Maximum (10 Second Duration)
TL
260
℃
Junction Temperature
Tj
150
℃
Tstg
-55 ~ +150
℃
Storage Temperature Range
(1).Device stressed with ten non-repetitive ESD pulses.
(2).Non-repetitive current pulse 8/20µs exponential decay waveform according to IEC61000-4-5.
ESD standards compliance
IEC61000-4-2 Standard
JESD22-A114-B Standard
Contact Discharge
Air Discharge
ESD Class
Human Body Discharge V
Level
Test Voltage kV
Level
Test Voltage kV
0
0~249
1
2
1
2
2
4
2
4
1A
1B
1C
250~499
500~999
1000~1999
3
6
3
8
4
8
4
15
2
3A
3B
2000~3999
4000~7999
8000~15999
ESD pulse waveform according to IEC61000-4-2
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8/20μs pulse waveform according to IEC 61000-4-5
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CHANGJIANG ELEC.TECH.
CESD5V0D7
ELECTRICAL PARAMETER
Symbol
Parameter
VC
Clamping Voltage @ IPP
IPP
Peak Pulse Current
VBR
Breakdown Voltage @ IT
IT
Test Current
IR
Reverse Leakage Current @ VRWM
VRWM
Reverse Standoff Voltage
VF
Forward [email protected] IF
IF
Forward Current
V-I characteristics for a uni-directional TVS
ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)
Parameter
Reverse stand off voltage
Reverse leakage current
Breakdown voltage
Clamping voltage
Symbol
Test conditions
Min
Typ
Max
Unit
5
V
1
μA
7.3
V
IPP=13A
13
V
0.9
V
(1)
VRWM
IR
V(BR)
(2)
VC
VRWM=5V
IT=1mA
Forward voltage
VF
IF=10mA
Junction capacitance
CJ
VR=0V,f=1MHz
6.2
95
pF
(1).Other voltages available upon request.
(2).Non-repetitive current pulse 8/20μs exponential decay waveform according to IEC61000-4-5
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CESD5V0D7
TYPICAL CHARACTERISTICS
100
Forward Characteristics
Reverse Characteristics
100
Pulsed
Pulsed
REVERSE CURRENT IR
T=
a 25
℃
=1
00
℃
a
T
FORWARD CURRENT
Ta=100℃
(mA)
10
IF
(mA)
80
1
60
Ta=25℃
40
20
0.1
400
500
600
700
FORWARD VOLTAGE
VC ----
15
800
VF
900
0
1000
0
2
4
6
REVERSE VOLTAGE
(mV)
IPP
8
VR
Capacitance Characteristics
110
Ta=25℃
Ta=25℃
tp=8/20us
f=1MHz
100
12
JUNCTION CAPACITANCE
CJ (pF)
CLAMPING VOLTAGE VC(V)
10
(V)
9
6
90
80
70
60
50
3
0
2
4
6
8
10
12
40
13
REVERSE PEAK PULSE CURRENT IPP (A)
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0
1
2
REVERSE VOLTAGE
4
3
4
VR
5
(V)
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CESD5V0D7
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PACKAGE OUTLINE AND PAD LAYOUT INFORMATION
Symbol
A
A1
b
c
D
E
E1
E2
L
θ
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Dimensions In Millimeters
Min
Max
0.525
0.650
0.515
0.580
0.250
0.350
0.080
0.150
0.550
0.650
0.900
1.100
1.300
1.500
0.200 REF
0.010
0.070
7° REF
Dimensions In Inches
Min
Max
0.021
0.026
0.020
0.023
0.010
0.014
0.003
0.006
0.022
0.026
0.035
0.043
0.051
0.059
0.008 REF
0.001
0.003
7° REF
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CHANGJIANG ELEC.TECH.
CESD5V0D7
TAPE AND REEL INFORMATION
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