SOD-723 Plastic-Encapsulate Diodes CESD3V3D7 Uni

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-723 Plastic-Encapsulate Diodes
CESD3V3D7
Uni-direction ESD Protection Diode
DESCRIPTION
SOD-723
Designed to protect voltage sensitive electronic components from ESD and other
transients. Excellent clamping capability, low leakage, and fast response time provide
best in class protection on designs that are exposed to ESD.
The combination of small size, high level of ESD protection makes them a flexible
solution for applications such as HDMI, Display Port TM, and MDDI interfaces. It is
designed to replace multiplayer varistors (MLV) in consumer equipments applications
such as mobile phone, notebook, PAD, STB, LCD TV etc.
FEATURES
z
Uni-directional ESD protection of one line
z
Fast response time
z
Reverse stand−off voltage: 3.3V
z
JESD22-A114-B ESD Rating of class 3B per human
z
Low reverse clamping voltage
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Low leakage current
z
Excellent package:1.00mm×0.60mm×0.55mm
body model
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IEC 61000-4-2 Level 4 ESD protection
APPLICATIONS
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Computers and peripherals
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Portable electronics
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Audio and video equipment
z
Other electronics equipments communi-
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Cellular handsets and accessories
cation systems
MARKING
E0 = Device code
The marking bar indicates the cathode
Front side
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CESD3V3D7
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Parameter
Symbol
IEC 61000-4-2 ESD Voltage
Air Model
Per Human Body Model
ESD Voltage
(1)
VESD
Machine Model
Peak Pulse Power
±25
±16
kV
±0.4
(2)
120
W
(2)
9.0
A
PPP
Peak Pulse Current
Unit
±25
Contact Model
JESD22-A114-B ESD Voltage
Limit
IPP
Lead Solder Temperature − Maximum (10 Second Duration)
TL
260
℃
Junction Temperature
Tj
150
℃
Tstg
-55 ~ +150
℃
Storage Temperature Range
(1).Device stressed with ten non-repetitive ESD pulses.
(2).Non-repetitive current pulse 8/20µs exponential decay waveform according to IEC61000-4-5.
ESD standards compliance
IEC61000-4-2 Standard
JESD22-A114-B Standard
Contact Discharge
Air Discharge
ESD Class
Human Body Discharge V
Level
Test Voltage kV
Level
Test Voltage kV
0
0~249
1
2
1
2
2
4
2
4
1A
1B
1C
250~499
500~999
1000~1999
3
6
3
8
4
8
4
15
2
3A
3B
2000~3999
4000~7999
8000~15999
ESD pulse waveform according to IEC61000-4-2
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8/20μs pulse waveform according to IEC 61000-4-5
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CESD3V3D7
ELECTRICAL PARAMETER
Symbol
Parameter
VC
Clamping Voltage @ IPP
IPP
Peak Pulse Current
VBR
Breakdown Voltage @ IT
IT
Test Current
IR
Reverse Leakage Current @ VRWM
VRWM
Reverse Standoff Voltage
VF
Forward [email protected] IF
IF
Forward Current
V-I characteristics for a uni-directional TVS
ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)
Parameter
Reverse stand off voltage
Reverse leakage current
Breakdown voltage
Clamping voltage
Symbol
Test conditions
Min
Typ
Max
Unit
3.3
V
2.5
μA
5.9
V
IPP=9A
13
V
0.9
V
(1)
VRWM
IR
V(BR)
(2)
VC
VRWM=3.3V
IT=1mA
Forward voltage
VF
IF=10mA
Junction capacitance
CJ
VR=0V,f=1MHz
5
110
pF
(1).Other voltages available upon request.
(2).Non-repetitive current pulse 8/20μs exponential decay waveform according to IEC61000-4-5
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CESD3V3D7
TYPICAL CHARACTERISTICS
Forward
Characteristics
Reverse
100
Pulsed
Pulsed
80
(mA)
(mA)
T=
a 2
5℃
REVERSE CURRENT IR
10
T=
a 1
00
℃
IF
FORWARD CURRENT
Characteristics
100
1
Ta=25℃
60
40
Ta=100℃
20
0.1
0.4
0.5
0.6
0.7
0.8
FORWARD VOLTAGE
VC ——
20
VF
0.9
0
1.0
0
1
2
3
4
REVERSE VOLTAGE
(V)
5
VR
6
7
(V)
Capacitance Characteristics
IPP
160
Ta=25℃
Ta=25℃
f=1MHz
tp=8/20us
120
JUNCTION CAPACITANCE
CJ (pF)
CLAMPING VOLTAGE VC(V)
16
12
8
80
40
4
0
1
2
4
6
8
0
10
REVERSE PEAK PULSE CURRENT IPP(A)
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0
1
2
REVERSE VOLTAGE
4
3
4
VR
5
(V)
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CESD3V3D7
PACKAGE OUTLINE AND PAD LAYOUT INFORMATION
Dimensions In Millimeters
Min
Max
0.525
0.650
0.515
0.580
0.250
0.350
0.080
0.150
0.550
0.650
0.900
1.100
1.300
1.500
0.200 REF
0.010
0.070
7° REF
Symbol
A
A1
b
c
D
E
E1
E2
L
θ
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Dimensions In Inches
Min
Max
0.021
0.026
0.020
0.023
0.010
0.014
0.003
0.006
0.022
0.026
0.035
0.043
0.051
0.059
0.008 REF
0.001
0.003
7° REF
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CHANGJIANG ELEC.TECH.
CESD3V3D7
TAPE AND REEL INFORMATION
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