ROHM 2SA1577T106Q

Medium Power Transistor (-32V, -05A)
2SA1577
Features
1) Large IC.
ICMAX. = -500mA
2) Low VCE(sat). Ideal for low-voltage operation.
3) Complements the 2SC4097.
Dimensions (Unit : mm)
2SA1577
2.0±0.2
0.9±0.1
1.3±0.1
0.65 0.65
0.3 +0.1
−0
0∼0.1
0.1
(3)
2.1±0.1
Structure
Epitaxial planer type
PNP silicon transistor
0.7±0.1
(2)
1.25±0.1
(1)
0.2
0.15±0.05
All terminals have
same dimensions
Absolute maximum ratings (Ta=25C)
ROHM : UMT3
EIAJ : SC-70
Symbol
Limits
Unit
Collector-base voltage
VCBO
−40
V
Collector-emitter voltage
VCEO
−32
V
Emitter-base voltage
VEBO
−5
V
Collector current
IC
−0.5
A
Collector power dissipation
PC
0.2
W
Parameter
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
(1) Emitter
(2) Base
(3) Collector
∗
Abbreviated symbol: H
∗ Denotes h
FE
∗
∗ PC MAX. must not be exceeded.
Electrical characteristics (Ta=25C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
BVCBO
−40
−
−
V
IC= −100μA
Collector-emitter breakdown voltage
BVCEO
−32
−
−
V
IC= −1mA
Emitter-base breakdown voltage
BVEBO
−5
−
−
V
IE= −100μA
ICBO
−
−
−1
μA
VCB= −20V
Collector outoff current
IEBO
−
−
−1
μA
VEB= −4V
VCE(sat)
−
−
−0.6
V
IC/IB= −300mA/−30mA
Rmitter cutoff current
Collector-emitter saturation voltage
Conditions
DC current transfer ratio
hFE
120
−
390
−
Transition frequency
fT
−
200
−
MHz
Output capacitance
Cob
−
7
−
pF
VCE= −3V, IC= −100mA
VCE= −5V, IE=20mA, f=100MHz
VCB= −10V, IE=0A, f=1MHz
Packaging specifications
Package
Type
hFE
2SA1577
QR
Taping
Code
T106
Basic ordering unit (pieces)
3000
hFE values are classifies as follows.
Item
Q
R
hFE
120 to 270
180 to 390
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c 2009 ROHM Co., Ltd. All rights reserved.
○
1/2
2009.12 - Rev.B
2SA1577
Data Sheet
Electrical characteristic curves
-20
-10
-5
-2
-1
-0.5
-0.2
-0.1
0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0 -2.2
-1mA
-0.8mA
-80
-0.7mA
-0.6mA
-60
-0.5mA
-0.4mA
-40
-0.3mA
-0.2mA
-20
-0.1mA
0
-1
-2
-3
-4
-5.0mA
-4.5mA
-4.0mA
-3.5mA
-3.0mA
-2.5mA
-2.0mA
-400
-300
-200
-1.5mA
-1.0mA
-100
IB=0A
0
Ta=25 C
0
-5
-0.5mA
IB=0A
0
-5
-10
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.1 Grounded emitter propagation
Fig.2 Grounded emitter output
characteristics ( Ι )
Fig.3 Ground emitter output
characteristics ( ΙΙ )
Ta=25 C
DC CURRENT GAIN : hFE
500
VCE=-5V
-3V
-1V
200
100
50
-1
-2
-5 -10 -20
500
Ta=100 C
200
-0.3
-0.2
-0.1
Ta=100 C
25 C
-0.05
-55 C
-0.03
-0.02
-10 -20
-50 -100 -200
-500 -1000
COLLECTOR CURRENT : IC (mA)
Fig.7 Collector-emitter saturation
voltage vs. collector current ( ΙΙ )
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c 2009 ROHM Co., Ltd. All rights reserved.
○
TRANSITION FREQUENCY : fT (MHz)
COLLECTOR SATURATION
VOLTAGE : VCE(sat) (V)
-0.5
-5
-2
-5 -10 -20
-50 -100 -200 -500 -1000
-0.5
-0.2
-0.1
IC/IB=50
-0.05
20
10
-0.02
-1 -2
1000
500
200
100
50
1
2
5
10
20
EMITTER CURRENT : IE (mA)
Fig.8 Gain bandwidth product vs.
emitter current
2/2
-50 -100 -200 -500
Fig.6 Collector emitter saturation
voltage vs. collector current ( Ι )
Ta=25 C
VCE=-5V
0.5
-5 -10 -20
COLLECTOR CURRENT : IC (mA)
Fig.5 DC current gain vs.
collector current ( ΙΙ )
lC/lB=10
-2
-1
Ta=25 C
-1
COLLECTOR CURRENT : IC (mA)
Fig.4 DC current gain vs.
collector current ( Ι )
-0.01
-1
-55 C
50
COLLECTOR CURRENT : IC (mA)
-1.0
25 C
100
20
-50 -100 -200 -500 -1000
VCE=-3V
50
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
EMITTER INPUT CAPACITANCE : Cib (pF)
20
1000
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
BASE TO EMITTER VOLTAGE : VBE (V)
1000
DC CURRENT GAIN : hFE
-500
-0.9mA
Ta=25 C
COLLECTOR CURRENT : IC (mA)
-100
VCE=−3V
-200 Ta=100 °C
25 °C
-100
−55 °C
-50
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
-500
Ta=25 C
f=1MHz
IE=0A
IC=0A
100
50
20
10
5
2
-0.5
-1
-2
-5
-10
-20
-50
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.9 Collectur output capacitance vs.
collector-base voltage. Emitter input
capacitance vs. emitter -base voltage
2009.12 - Rev.B
Notice
Notes
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