Datasheet

AO6802
30V Dual N-Channel MOSFET
General Description
Product Summary
The AO6802 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications.
ID (at VGS=10V)
VDS
30V
3.5A
RDS(ON) (at VGS=10V)
< 50mΩ
RDS(ON) (at VGS = 4.5V)
< 70mΩ
D1
TSOP6
Top View
G1
1
2
6
5
D1
S2
G2
3
4
D2
S1
G1
Pin1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Continuous Drain
Current
VGS
TA=25°C
TA=25°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
Rev 2: Mar 2011
Steady-State
Steady-State
±20
V
A
1.15
W
0.73
TJ, TSTG
Symbol
t ≤ 10s
Units
V
3
PD
Junction and Storage Temperature Range
Maximum
30
20
IDM
TA=70°C
S2
3.5
ID
TA=70°C
Pulsed Drain Current C
Power Dissipation B
G2
S1
Gate-Source Voltage
D2
Top View
Bottom View
RθJA
RθJL
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-55 to 150
Typ
78
106
64
°C
Max
110
150
80
Units
°C/W
°C/W
°C/W
Page 1 of 5
AO6802
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
Conditions
Min
ID=250µA, VGS=0V
IGSS
VGS(th)
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage
VDS=VGS ID=250µA
1.5
ID(ON)
On state drain current
VGS=10V, VDS=5V
20
TJ=125°C
VGS=4.5V, ID=2A
gFS
Forward Transconductance
VDS=5V, ID=3.5A
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
±100
nA
2
2.5
V
40
50
61
77
52
70
mΩ
1
V
1.5
A
210
pF
A
mΩ
12
0.79
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
µA
5
VGS=10V, ID=3.5A
Coss
V
TJ=55°C
VSD
Units
1
Zero Gate Voltage Drain Current
Static Drain-Source On-Resistance
Max
30
VDS=30V, VGS=0V
IDSS
RDS(ON)
Typ
170
VGS=0V, VDS=15V, f=1MHz
S
35
pF
23
pF
3.5
5.3
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
4.05
5
nC
Qg(4.5V) Total Gate Charge
2
3
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=3.5A
1.7
0.55
nC
1
nC
4.5
ns
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Body Diode Reverse Recovery Time
IF=3.5A, dI/dt=100A/µs
7.5
Qrr
Body Diode Reverse Recovery Charge IF=3.5A, dI/dt=100A/µs
2.5
VGS=10V, VDS=15V, RL=4.2Ω,
RGEN=3Ω
Turn-Off Fall Time
1.5
ns
18.5
ns
15.5
ns
10
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value
in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 2: Mar 2011
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Page 2 of 5
AO6802
N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
10
VDS=5V
10V
7V
8
9
ID(A)
ID (A)
12
4V
4.5V
3.5V
6
125°C
4
3
25°C
2
VGS=3V
0
0
0
1
2
3
4
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
0.5
5
1
1.5
2
2.5
3
3.5
4
4.5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
1.8
Normalized On-Resistance
70
VGS=10V
ID=3.5A
1.6
60
RDS(ON) (mΩ )
6
VGS=4.5V
1.4
50
1.2
40
VGS=10V
30
VGS=4.5V
ID=2A
1
17
5
2
10
0.8
0
2
4
6
8
10
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
0
25
50
75
100
125
150
175
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
1.0E+02
120
ID=3.5A
1.0E+01
40
1.0E+00
125°C
80
IS (A)
RDS(ON) (mΩ )
100
1.0E-01
125°C
1.0E-02
60
25°C
25°C
1.0E-03
40
1.0E-04
20
1.0E-05
2
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 2: Mar 2011
4
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 5
AO6802
N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
300
VDS=15V
ID=3.5A
250
Capacitance (pF)
VGS (Volts)
8
Ciss
200
6
150
4
100
Coss
2
50
Crss
0
0
0
1
2
3
4
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
5
100.0
5
10 V (Volts)
15
20
25
DS
Figure 8: Capacitance Characteristics
30
1000
TA=25°C
10µs
ID (Amps)
RDS(ON)
limited
100
100µs
1ms
1.0
Power (W)
10.0
10
10ms
TJ(Max)=150°C
TA=25°C
0.1
10s
DC
1
0.00001
0.0
0.01
0.1
1
VDS (Volts)
10
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
1
0.001
0.1
10
1000
100
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
Pulse Width (s)
Figure 10: Single Pulse Power Rating
Junction-to-Ambient (Note F)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=150°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
Rev 2: Mar 2011
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
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100
1000
Page 4 of 5
AO6802
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev 2: Mar 2011
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 5 of 5