Product Data Sheet STW8Q2PA – Mid-Power LED Enabling the best lm/W in Mid Power Range Mid-Power LED - 5630 Series STW8Q2PA (Cool, Neutral, Warm) RoHS Product Brief Description Features and Benefits • This White Colored surface-mount LED comes in standard package dimension. Package Size: 5.6x3.0x0.9mm • It has a substrate made up of a molded plastic reflector sitting on top of a lead frame. • • • • • • The die is attached within the reflector cavity and the cavity is encapsulated by silicone. • The Best Efficacy in Mid Power LEDs Market Standard 5630 Package Size High Color Quality, CRI Min.80 Wide CCT range 2,600~7,000K RoHS compliant Key Applications • • • • The package design coupled with careful selection of component materials allow these products to perform with high reliability. Interior lighting General lighting Indoor and outdoor displays Architectural / Decorative lighting Table 1. Product Selection Table CCT Part Number Color Min. Typ. Max. STW8Q2PA Cool White 4,700K 5,600K 7,000K STW8Q2PA Neutral White 3,700K 4,200K 4,700K STW8Q2PA Warm White 2,600K 3,000K 3,700K Rev2.1, Dec 1, 2015 1 www.seoulsemicon.com Product Data Sheet STW8Q2PA – Mid-Power LED Table of Contents Index • Product Brief 1 • Table of Contents 2 • Performance Characteristics 3 • Characteristics Graph 4 • Color Bin Structure 10 • Mechanical Dimensions 15 • Material Structure 16 • Recommended Solder Pad 17 • Reflow Soldering Characteristics 18 • Emitter Tape & Reel Packaging 19 • Product Nomenclature 21 • Handling of Silicone Resin for LEDs 22 • Precaution For Use 23 • Company Information 26 Rev2.1, Dec 1, 2015 2 www.seoulsemicon.com Product Data Sheet STW8Q2PA – Mid-Power LED Performance Characteristics Table 2. Absolute Maximum Ratings, IF =100mA, Tj = 25ºC, RH30% Value Parameter Symbol Unit Min. Typ. Max. Forward Current IF - 100 160 mA Forward Voltage[1] VF (100mA) 2.9 3.2 3.4 V Reverse Voltage Vr - 0.9 1.2 V Luminous Intensity (3,700~7,000 K) [1] Iv (100mA) - 9.5 (29.0) - - 8.9 (27.9) - 75 80 - 80 - 90 Luminous Intensity (2,600~3,700 K) [1] Color Rendering Index Viewing Angle [1] [2] Iv (100mA) cd (lm) Ra - 2Θ1/2 120 Power Dissipation Pd - - 592 mW Junction Temperature Tj - - 125 ºC Tstg - 40 - + 100 ºC RθJ-S - 15 - ℃/W Storage Temperature Thermal resistance (J to S) ESD Sensitivity(HBM) [4] [3] - Class 3A JESD22-A114-E Notes : (1) Tolerance : VF :±0.1V, IV :±7%, Ra :±2, x,y :±0.007 (2) Θ1/2 is the off-axis where the luminous intensity is 1/2 of the peak intensity (3) Thermal resistance : RthJS (Junction / solder) (4) A zener diode is included for ESD Protection. • • LED’s properties might be different from suggested values like above and below tables if operation condition will be exceeded our parameter range. Care is to be taken that power dissipation does not exceed the absolute maximum rating of the product. All measurements were made under the standardized environment of Seoul Semiconductor. Rev2.1, Dec 1, 2015 3 www.seoulsemicon.com Product Data Sheet STW8Q2PA – Mid-Power LED Characteristics Graph Fig 1. Color Spectrum, IF = 100mA, Tj = 25ºC, RH30% 2600~3700K 3700~4700K 4700~7000K Relative Emission Intensity 1.0 0.5 0.0 300 400 500 600 700 800 Wavelength [nm] Fig 2. Viewing Angle Distribution, IF = 100mA 0 30 -30 60 -60 90 -90 Rev2.1, Dec 1, 2015 4 www.seoulsemicon.com Product Data Sheet STW8Q2PA – Mid-Power LED Characteristics Graph Fig 3. Forward Voltage vs. Forward Current, T j = 25ºC Forward Current IF [mA] 100 10 1 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8 4.0 Forward Voltage VF [V] Fig 4. Forward Current vs. Relative Luminous Flux, Tj = 25ºC 1.6 Relative Luminous Intensity 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 20 40 60 80 100 120 140 160 Forward Current IF [mA] Rev2.1, Dec 1, 2015 5 www.seoulsemicon.com Product Data Sheet STW8Q2PA – Mid-Power LED Characteristics Graph Fig 5. Forward Current vs. CIE X, Y Shift, T j = 25ºC 0.368 0.366 y 20mA 60mA 100mA 0.364 150mA 200mA 0.362 0.360 0.336 0.337 0.338 0.339 0.340 0.341 x Rev2.1, Dec 1, 2015 6 www.seoulsemicon.com Product Data Sheet STW8Q2PA – Mid-Power LED Characteristics Graph Fig 6. Relative Light Output vs. Junction Temperature, IF = 100mA 1.0 Relative Light Output 0.8 0.6 0.4 0.2 0.0 25 50 75 100 125 O Junction temperature Tj( C) Fig 7. Junction Temperature vs. Relative Forward Voltage, IF = 100mA Relative Forward Voltage 1.0 0.8 0.6 0.4 0.2 0.0 25 50 75 100 125 O Junction temperature Tj( C) Rev2.1, Dec 1, 2015 7 www.seoulsemicon.com Product Data Sheet STW8Q2PA – Mid-Power LED Characteristics Graph Fig 8. Chromaticity Coordinate vs. Junction Temperature, IF = 100mA 0.335 0.330 25 0.325 y 45 65 0.320 85 105 0.315 0.310 0.315 0.320 0.325 0.330 x Rev2.1, Dec 1, 2015 8 www.seoulsemicon.com Product Data Sheet STW8Q2PA – Mid-Power LED Characteristics Graph Fig 9. Maximum Forward Current vs. Ambient Temperature 200 180 Forward Current IF[mA] 160 140 o RthJ-A=100 C/W 120 100 80 60 40 20 0 -40 -20 0 20 40 60 80 100 O Ambient temperature Ta( C) Rev2.1, Dec 1, 2015 9 www.seoulsemicon.com Product Data Sheet STW8Q2PA – Mid-Power LED Color Bin Structure Table 3. Bin Code description, IF = 100mA Color Chromaticity Coordinate Luminous Intensity (cd) Part Number Bin Code Min. Max. R0 8.0 R5 Typical Forward Voltage (Vf) Bin Code Min. Max. 8.5 Y3 2.9 3.0 8.5 9.0 Z1 3.0 3.1 S0 9.0 9.5 Z2 3.1 3.2 S5 9.5 10.0 Z3 3.2 3.3 A1 3.3 3.4 STW8Q2PA Refer to page.12 T0 10.0 10.5 T5 10.5 11.0 U0 11.0 11.7 U7 11.7 12.5 Table 5. Intensity rank distribution CCT CIE IV Rank 6,000 ~ 7,000K A R0 R5 S0 S5 T0 T5 U0 U7 5,300 – 6,000K B R0 R5 S0 S5 T0 T5 U0 U7 4,700 ~ 5,300K C R0 R5 S0 S5 T0 T5 U0 U7 4,200 ~ 4,700K D R0 R5 S0 S5 T0 T5 U0 U7 3,700 ~ 4,200K E R0 R5 S0 S5 T0 T5 U0 U7 3,200 ~ 3,700K F R0 R5 S0 S5 T0 T5 U0 U7 2,900 ~ 3,200K G R0 R5 S0 S5 T0 2,600 ~ 2,900K H R0 R5 S0 S5 T0 T5 U0 U7 Available ranks Not yet available ranks T5 U0 U7 *Notes : (1) All measurements were made under the standardized environment of Seoul Semiconductor In order to ensure availability, single color rank will not be orderable. Rev2.1, Dec 1, 2015 10 www.seoulsemicon.com Product Data Sheet STW8Q2PA – Mid-Power LED Color Bin Structure CIE Chromaticity Diagram, IF = 100mA, Tj = 25ºC 0.46 2600K 0.44 2900K 2700K 3000K 3200K 0.42 G1 3700K G0 F1 4000K 0.40 E1 CIE Y 4700K 0.38 5000K 5600K 0.36 6000K 6500K 0.34 A1 7000K A0 A2 0.32 A3 D1 D0 5300K D3 C1 C0 B1 C2 B0 B3 C4 B2 B5 D2 C3 F2 E0 E2 H4 F3 H3 H2 G3 G2 F0 4200K 4500K H1 H0 3500K H5 G5 G4 F5 E3 F4 E5 E4 D5 D4 C5 B4 A5 A4 A7 A6 0.30 0.28 0.28 0.30 0.32 0.34 0.36 0.38 0.40 0.42 0.44 0.46 0.48 0.50 CIE X *Notes : • Energy Star binning applied to all 2,600~7,000K. • Measurement Uncertainty of the Color Coordinates : ± 0.007 Rev2.1, Dec 1, 2015 11 www.seoulsemicon.com Product Data Sheet STW8Q2PA – Mid-Power LED Color Bin Structure CIE Chromaticity Diagram (Cool White), IF = 100mA, Tj = 25ºC 0.39 0.38 4700K 5000K 0.37 0.36 CIE Y C0 5600K B1 6000K 0.35 6500K 0.34 0.33 C1 5300K A1 7000K A3 A0 A2 0.32 A4 B0 B3 B2 B5 C2 C3 C5 C4 B4 A5 A7 A6 0.31 0.30 0.29 0.29 0.30 0.31 0.32 0.33 0.34 0.35 0.36 CIE X A0 CIE X 0.3028 0.3041 0.3126 0.3115 A2 CIE Y 0.3304 0.324 0.3324 0.3393 CIE X 0.3041 0.3055 0.3136 0.3126 CIE Y 0.3393 0.3324 0.3408 0.3481 CIE X 0.3126 0.3136 0.3216 0.321 CIE Y 0.3462 0.3389 0.3461 0.3539 CIE X 0.3212 0.3217 0.3293 0.3293 CIE Y 0.3461 0.3384 0.3451 0.3534 CIE X 0.3293 0.3294 0.3366 0.3369 CIE Y 0.3451 0.3369 0.3428 0.3514 CIE X 0.3463 0.3456 0.3539 0.3552 A1 CIE X 0.3115 0.3126 0.321 0.3205 CIE X 0.3136 0.3146 0.3221 0.3216 CIE Y 0.3389 0.3316 0.3384 0.3461 CIE X 0.3217 0.3222 0.3294 0.3293 CIE Y 0.3384 0.3306 0.3369 0.3451 CIE X 0.3376 0.3373 0.3456 0.3463 CIE Y 0.3687 0.3601 0.3669 0.376 CIE X 0.3456 0.3448 0.3526 0.3539 CIE X 0.3068 0.3082 0.3155 0.3146 CIE Y 0.3256 0.3187 0.3261 0.3334 CIE X 0.3146 0.3155 0.3225 0.3221 CIE Y 0.3316 0.3243 0.3306 0.3384 CIE X 0.3292 0.3293 0.3373 0.3376 CIE Y 0.3616 0.3534 0.3601 0.3687 CIE X 0.3373 0.3369 0.3448 0.3456 CIE Y 0.3601 0.3514 0.3578 0.3669 CIE X 0.3448 0.344 0.3514 0.3526 CIE Y 0.3187 0.312 0.319 0.3261 B1 C0 CIE Y 0.3539 0.3461 0.3534 0.3616 C2 C3 12 CIE Y 0.3113 0.3046 0.312 0.3187 A7 B4 C1 Rev2.1, Dec 1, 2015 A6 CIE Y 0.3177 0.3113 0.3187 0.3256 A5 B5 C4 CIE X 0.3369 0.3366 0.344 0.3448 CIE Y 0.3324 0.3256 0.3334 0.3408 B2 B3 CIE X 0.3293 0.3293 0.3369 0.3373 CIE X 0.3055 0.3068 0.3146 0.3136 A3 B0 CIE X 0.3207 0.3212 0.3293 0.3292 A4 CIE Y 0.324 0.3177 0.3256 0.3324 CIE Y 0.3534 0.3451 0.3514 0.3601 C5 CIE Y 0.3514 0.3428 0.3487 0.3578 www.seoulsemicon.com Product Data Sheet STW8Q2PA – Mid-Power LED Color Bin Structure CIE Chromaticity Diagram (Cool White), IF = 100mA, Tj = 25ºC 0.42 3700K 0.40 4000K E1 4200K E0 4500K 0.38 CIE Y 4700K D1 D0 D2 0.36 E2 E3 E5 D3 E4 D5 D4 0.34 0.34 0.35 0.36 0.37 0.38 0.39 0.40 0.41 CIE X D0 CIE X 0.3548 0.3536 0.3625 0.3641 D2 CIE Y 0.3736 0.3646 0.3711 0.3804 CIE X 0.3536 0.3523 0.3608 0.3625 CIE Y 0.3804 0.3711 0.3775 0.3874 CIE X 0.3625 0.3608 0.3692 0.3714 CIE Y 0.3874 0.3775 0.3855 0.3958 CIE X 0.3714 0.3692 0.3813 0.3842 CIE Y 0.3958 0.3855 0.3935 0.4044 CIE X 0.3842 0.3813 0.3934 0.397 D1 CIE X 0.3641 0.3625 0.3714 0.3736 Rev2.1, Dec 1, 2015 CIE Y 0.3711 0.3616 0.3677 0.3775 CIE X 0.3608 0.359 0.367 0.3692 CIE Y 0.3775 0.3677 0.3751 0.3855 CIE X 0.3692 0.367 0.3783 0.3813 CIE Y 0.3855 0.3751 0.3825 0.3935 CIE X 0.3813 0.3783 0.3898 0.3934 CIE Y 0.3616 0.3521 0.3578 0.3677 E4 E3 13 CIE Y 0.3555 0.3465 0.3521 0.3616 D5 E2 E1 CIE X 0.3869 0.3842 0.397 0.4006 CIE X 0.3523 0.3511 0.359 0.3608 D3 E0 CIE X 0.3736 0.3714 0.3842 0.3869 D4 CIE Y 0.3646 0.3555 0.3616 0.3711 CIE Y 0.3677 0.3578 0.3646 0.3751 E5 CIE Y 0.3751 0.3646 0.3716 0.3825 www.seoulsemicon.com Product Data Sheet STW8Q2PA – Mid-Power LED Color Bin Structure CIE Chromaticity Diagram (Warm White), IF = 100mA, Tj = 25ºC 0.46 0.44 2900K 3200K 0.42 CIE Y 3500K 0.40 F0 F2 0.38 3000K G0 G2 F3 G5 G4 H3 H2 G3 H4 2600K H1 H0 G1 F1 3700K 2700K H5 F5 F4 0.36 0.38 0.40 0.42 0.44 0.46 0.48 0.50 CIE X F0 CIE X 0.3996 0.396 0.4104 0.4146 F2 CIE Y 0.4015 0.3907 0.3978 0.4089 CIE X 0.396 0.3925 0.4062 0.4104 CIE Y 0.3978 0.3865 0.3931 0.4048 CIE X 0.4062 0.4017 0.4147 0.4198 CIE Y 0.3931 0.3814 0.3853 0.3973 CIE X 0.443 0.4374 0.4499 0.4562 CIE Y 0.426 0.4138 0.4166 0.4289 CIE X 0.4499 0.4436 0.4551 0.462 CIE Y 0.4166 0.4042 0.4069 0.4194 CIE X 0.4551 0.4483 0.4593 0.4666 F3 CIE X 0.4104 0.4062 0.4198 0.4248 CIE X 0.4299 0.4248 0.4374 0.443 CIE Y 0.4212 0.4093 0.4138 0.426 CIE X 0.4374 0.4317 0.4436 0.4499 CIE Y 0.4138 0.4015 0.4042 0.4166 CIE X 0.4436 0.4373 0.4483 0.4551 F1 CIE Y 0.3798 0.369 0.3751 0.3865 CIE X 0.4146 0.4104 0.4248 0.4299 CIE Y 0.4165 0.4048 0.4093 0.4212 CIE X 0.4248 0.4198 0.4317 0.4374 CIE Y 0.4093 0.3973 0.4015 0.4138 CIE X 0.4317 0.4259 0.4373 0.4436 CIE Y 0.4015 0.3893 0.3919 0.4042 CIE X 0.4687 0.462 0.474 0.481 G0 CIE Y 0.4089 0.3978 0.4048 0.4165 G2 G3 H2 H3 CIE X 0.462 0.4551 0.4666 0.474 CIE Y 0.3865 0.3751 0.3814 0.3931 G1 H0 CIE X 0.4562 0.4499 0.462 0.4687 CIE X 0.3925 0.3889 0.4017 0.4062 F5 G4 CIE X 0.4198 0.4147 0.4259 0.4317 F4 CIE Y 0.3907 0.3798 0.3865 0.3978 CIE Y 0.4048 0.3931 0.3973 0.4093 G5 H4 CIE Y 0.3973 0.3853 0.3893 0.4015 H1 CIE Y 0.4289 0.4166 0.4194 0.4319 H5 Rev2.1, Dec 1, 2015 CIE Y 0.4042 0.3919 0.3944 0.4069 14 www.seoulsemicon.com VIEW Product Data Sheet STW8Q2PA – Mid-Power LED Mechanical Dimensions Top View Bottom View Cathode Mark N.C A C2 C1 TOP VIEW BOTTOMSlug VIEW Side View Circuit SIDE VIEW ESD Protection Device (1) All dimensions are in millimeters. (2) Scale : none (3) Undefined tolerance is ±0.1mm (4) Forward current is 50mA per die for parallel inner circuit. Package total forward current is 100mA. Rev2.1, Dec 1, 2015 15 www.seoulsemicon.com Product Data Sheet STW8Q2PA – Mid-Power LED Material Structure Parts No. Name Description Materials ① LEAD FRAME Metal Copper Alloy (Silver Plated) ② Chip Source Blue LED GaN on Sapphire ③ Wire Metal Gold Wire ④ Encapsulation Silicone +Phosphor ⑤ Body Thermo Plastic Heat-resistant Polymer ⑥ Zener Diode Si - Rev2.1, Dec 1, 2015 16 www.seoulsemicon.com Product Data Sheet STW8Q2PA – Mid-Power LED Recommended Solder Pad Notes : (1) All dimensions are in millimeters. (2) Scale : none (3) This drawing without tolerances are for reference only. (4) Undefined tolerance is ±0.1mm. Rev2.1, Dec 1, 2015 17 www.seoulsemicon.com Product Data Sheet STW8Q2PA – Mid-Power LED Reflow Soldering Characteristics IPC/JEDEC J-STD-020 Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Average ramp-up rate (Tsmax to Tp) 3° C/second max. 3° C/second max. Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (Tsmin to Tsmax) (ts) 100 °C 150 °C 60-120 seconds 150 °C 200 °C 60-180 seconds Time maintained above: - Temperature (TL) - Time (tL) 183 °C 60-150 seconds 217 °C 60-150 seconds Peak Temperature (Tp) 215℃ 260℃ Time within 5°C of actual Peak Temperature (tp)2 10-30 seconds 20-40 seconds Ramp-down Rate 6 °C/second max. 6 °C/second max. Time 25°C to Peak Temperature 6 minutes max. 8 minutes max. Caution (1) Reflow soldering is recommended not to be done more than two times. In the case of more than 24 hours passed soldering after first, LEDs will be damaged. (2) Repairs should not be done after the LEDs have been soldered. When repair is unavoidable, suitable tools must be used. (3) Die slug is to be soldered. (4) When soldering, do not put stress on the LEDs during heating. (5) After soldering, do not warp the circuit board. Rev2.1, Dec 1, 2015 18 www.seoulsemicon.com Product Data Sheet STW8Q2PA – Mid-Power LED Emitter Tape & Reel Packaging 15.4±1.0 180 13±0.3 60 2 22 13 ( Tolerance: ±0.2, Unit: mm ) (1) Quantity : Max 3,500pcs/Reel (2) Cumulative Tolerance : Cumulative Tolerance/10 pitches to be ±0.2mm (3) Adhesion Strength of Cover Tape Adhesion strength to be 0.1-0.7N when the cover tape is turned off from the carrier tape at the angle of 10˚ to the carrier tape. (4) Package : P/N, Manufacturing data Code No. and Quantity to be indicated on a damp proof Package. Rev2.1, Dec 1, 2015 19 www.seoulsemicon.com Product Data Sheet STW8Q2PA – Mid-Power LED Emitter Tape & Reel Packaging Reel Aluminum Bag Outer Box Rev2.1, Dec 1, 2015 20 www.seoulsemicon.com Product Data Sheet STW8Q2PA – Mid-Power LED Product Nomenclature Table 6. Part Numbering System : X1X2X3X4X5X6X7X8 Part Number Code Description Part Number Value X1 Company S X2 Top View LED series T X3X4 Color Specification W8 CRI 80 X5 Package series Q Q series X6X7 Characteristic code 2P X8 Revision A Table 7. Lot Numbering System :Y1Y2Y3Y4Y5Y6Y7Y8Y9Y10–Y11Y12Y13Y14Y15Y16Y17 Lot Number Code Description Y1Y2 Year Y3 Month Y4Y5 Day Y6 Top View LED series Y7Y8Y9Y10 Mass order Y11Y12Y13Y14Y15Y16Y17 Internal Number Rev2.1, Dec 1, 2015 Lot Number 21 Value www.seoulsemicon.com Product Data Sheet STW8Q2PA – Mid-Power LED Handling of Silicone Resin for LEDs (1) During processing, mechanical stress on the surface should be minimized as much as possible. Sharp objects of all types should not be used to pierce the sealing compound. (2) In general, LEDs should only be handled from the side. By the way, this also applies to LEDs without a silicone sealant, since the surface can also become scratched. (3) When populating boards in SMT production, there are basically no restrictions regarding the form of the pick and place nozzle, except that mechanical pressure on the surface of the resin must be prevented. This is assured by choosing a pick and place nozzle which is larger than the LED’s reflector area. (4) Silicone differs from materials conventionally used for the manufacturing of LEDs. These conditions must be considered during the handling of such devices. Compared to standard encapsulants, silicone is generally softer, and the surface is more likely to attract dust. As mentioned previously, the increased sensitivity to dust requires special care during processing. In cases where a minimal level of dirt and dust particles cannot be guaranteed, a suitable cleaning solution must be applied to the surface after the soldering of components. (5) Seoul Semiconductor suggests using isopropyl alcohol for cleaning. In case other solvents are used, it must be assured that these solvents do not dissolve the package or resin. Ultrasonic cleaning is not recommended. Ultrasonic cleaning may cause damage to the LED. (6) Please do not mold this product into another resin (epoxy, urethane, etc) and do not handle this. product with acid or sulfur material in sealed space. Rev2.1, Dec 1, 2015 22 www.seoulsemicon.com Product Data Sheet STW8Q2PA – Mid-Power LED Precaution for Use (1) Storage To avoid the moisture penetration, we recommend store in a dry box with a desiccant. The recommended storage temperature range is 5℃ to 30℃ and a maximum humidity of RH50%. (2) Use Precaution after Opening the Packaging Use proper SMT techniques when the LED is to be soldered dipped as separation of the lens may affect the light output efficiency. Pay attention to the following: a. Recommend conditions after opening the package - Sealing - Temperature : 5 ~ 30℃ Humidity : less than RH60% b. If the package has been opened more than 4 week(MSL_2a) or the color of the desiccant changes, components should be dried for 10-12hr at 60±5℃ (3) Do not apply mechanical force or excess vibration during the cooling process to normal temperature after soldering. (4) Do not rapidly cool device after soldering. (5) Components should not be mounted on warped (non coplanar) portion of PCB. (6) Radioactive exposure is not considered for the products listed here in. (7) Gallium arsenide is used in some of the products listed in this publication. These products are dangerous if they are burned or shredded in the process of disposal. It is also dangerous to drink the liquid or inhale the gas generated by such products when chemically disposed of. (8) This device should not be used in any type of fluid such as water, oil, organic solvent and etc. When washing is required, IPA (Isopropyl Alcohol) should be used. (9) When the LEDs are in operation the maximum current should be decided after measuring the package temperature. Rev2.1, Dec 1, 2015 23 www.seoulsemicon.com Product Data Sheet STW8Q2PA – Mid-Power LED Precaution for Use (10) The appearance and specifications of the product may be modified for improvement without notice. (11) Long time exposure of sunlight or occasional UV exposure will cause lens discoloration. (12) VOCs (Volatile organic compounds) emitted from materials used in the construction of fixtures can penetrate silicone encapsulants of LEDs and discolor when exposed to heat and photonic energy. The result can be a significant loss of light output from the fixture. Knowledge of the properties of the materials selected to be used in the construction of fixtures can help prevent these issues. (13) Attaching LEDs, do not use adhesives that outgas organic vapor. (14) The driving circuit must be designed to allow forward voltage only when it is ON or OFF. If the reverse voltage is applied to LED, migration can be generated resulting in LED damage. (15) Similar to most Solid state devices; LEDs are sensitive to Electro-Static Discharge (ESD) and Electrical Over Stress (EOS). Below is a list of suggestions that Seoul Semiconductor purposes to minimize these effects. a. ESD (Electro Static Discharge) Electrostatic discharge (ESD) is the defined as the release of static electricity when two objects come into contact. While most ESD events are considered harmless, it can be an expensive problem in many industrial environments during production and storage. The damage from ESD to an LEDs may cause the product to demonstrate unusual characteristics such as: - Increase in reverse leakage current lowered turn-on voltage - Abnormal emissions from the LED at low current The following recommendations are suggested to help minimize the potential for an ESD event. One or more recommended work area suggestions: - Ionizing fan setup - ESD table/shelf mat made of conductive materials - ESD safe storage containers One or more personnel suggestion options: - Antistatic wrist-strap - Antistatic material shoes - Antistatic clothes Environmental controls: - Humidity control (ESD gets worse in a dry environment) Rev2.1, Dec 1, 2015 24 www.seoulsemicon.com Product Data Sheet STW8Q2PA – Mid-Power LED Precaution for Use b. EOS (Electrical Over Stress) Electrical Over-Stress (EOS) is defined as damage that may occur when an electronic device is subjected to a current or voltage that is beyond the maximum specification limits of the device. The effects from an EOS event can be noticed through product performance like: - Changes to the performance of the LED package (If the damage is around the bond pad area and since the package is completely encapsulated the package may turn on but flicker show severe performance degradation.) - Changes to the light output of the luminaire from component failure - Components on the board not operating at determined drive power Failure of performance from entire fixture due to changes in circuit voltage and current across total circuit causing trickle down failures. It is impossible to predict the failure mode of every LED exposed to electrical overstress as the failure modes have been investigated to vary, but there are some common signs that will indicate an EOS event has occurred: - Damaged may be noticed to the bond wires (appearing similar to a blown fuse) - Damage to the bond pads located on the emission surface of the LED package (shadowing can be noticed around the bond pads while viewing through a microscope) - Anomalies noticed in the encapsulation and phosphor around the bond wires - This damage usually appears due to the thermal stress produced during the EOS event c. To help minimize the damage from an EOS event Seoul Semiconductor recommends utilizing: - A surge protection circuit - An appropriately rated over voltage protection device - A current limiting device Rev2.1, Dec 1, 2015 25 www.seoulsemicon.com Product Data Sheet STW8Q2PA – Mid-Power LED Company Information Published by Seoul Semiconductor © 2013 All Rights Reserved. Company Information Seoul Semiconductor (www.SeoulSemicon.com) manufacturers and packages a wide selection of light emitting diodes (LEDs) for the automotive, general illumination/lighting, Home appliance, signage and back lighting markets. The company is the world’s fifth largest LED supplier, holding more than 10,000 patents globally, while offering a wide range of LED technology and production capacity in areas such as “nPola”, "Acrich", the world’s first commercially produced AC LED, and "Acrich MJT Multi-Junction Technology" a proprietary family of high-voltage LEDs. The company’s broad product portfolio includes a wide array of package and device choices such as Acrich and Acirch2, high-brightness LEDs, mid-power LEDs, side-view LEDs, and through-hole type LEDs as well as custom modules, displays, and sensors. Legal Disclaimer Information in this document is provided in connection with Seoul Semiconductor products. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Seoul Semiconductor hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. The appearance and specifications of the product can be changed to improve the quality and/or performance without notice. Rev2.1, Dec 1, 2015 26 www.seoulsemicon.com