20140919025658 2584

WGP15G65 Product Description
Absolute Maximum Ratings
symbol
Parameter
Value
Unit
Gate-Emitter Voltage
40
V
Collector Current (continuous) at TC = 25°C
30
A
Collector Current (continuous) at TC = 100°C
15
A
Collector Current (pulsed)
45
A
Eas
Single Pulse Energy TC= 25°C
500
mJ
PTOT
Total Dissipation at TC = 25°C
150
W
ESD
ESD (Human Body Model)
3
KV
Tstg
Storage Temperature
- 55 to 150
℃
VGE
IC
ICM(1)
Tj
Max. Operating Junction Temperature
(1)Pulse width limited by safe operating area
Thermal Characteristics
Value
Symbol
Parameter
Typ
-
-
0.75
℃/W
-
62.5
℃/W
Thermal Resistance , Junction -to -Case
RQJC
RQJA
Thermal Resistance , Junction-to -Ambient
Electrical Characteristics (TCASE= 25 °C
Symbol
-
Max
Unit
Min
UNLESS OTHERWISE SPECIFIED)
Parameter
Test Conditions
Min
Typ
Max
Unit
BV(CES)
Clamped Voltage
IC=1mA,VGE =0,TC=25°C
650
-
-
V
BV(ECR)
Emitter Collector Break-down Voltage
IC = 75 mA, TC= 25°C
20
30
-
V
ICES
Collector cut-off Current (VGE =0)
VCE=620V, VGE=0 ,TC=25°C
-
5
-
uA
IGES
Gate-Emitter Leakage Current (VCE =0)
VGE =±10V,VCE = 0
-
±100
-
uA
VCE =VGE, IC = 250μA, TC=- 50°C
2
3.18
4
V
VCE =VGE, IC = 250μA, TC= 25°C
1.8
3.05
3.5
V
VCE =VGE, IC = 250μA, TC=150°C
1.5
2.11
3
V
VGE =5.5V, IC = 5 A, TC= 25°C
-
1.03
1.2
V
VGE =5.5V, IC = 5A, TC= 150°C
-
0.92
1.2
V
VGE =5.5V, IC = 10 A, TC= 25°C
-
1.5
1.7
V
VGE =5.5V, IC = 10 A, TC= 150°C
-
1.32
1.5
V
Test Conditions
Min.
Typ.
Max.
Unit
25
30
-
S
-
1196
-
pF
-
211
-
pF
-
3.3
-
pF
-
21.4
-
nC
Min.
Typ.
Max.
Unit
VGE(th)
VCE(SAT)
Gate Threshold Voltage
Collector-Emitter Saturation Voltage
Symbol
gfs (1)
Parameter
Forward Transconductance
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
Qg
Gate Charge
Symbol
VCE =25V , IC=10 A
VCE=25V, f= 1MHz, VGE =0
VCE = 280V, IC =10 A, VGE=5V
Parameter
Test Conditions
WT-G003-Rev.A0 Nov.2013
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[email protected] insemi Microelectronics Co., Ltd., All right reserved.
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1113
WGP15G65 Product Description
tr(Voff)
td(off)
tf
Off Voltage Rise Time
Delay Time
VCC = 250V, IC =10 A, RGE =1K
Ω ,VGE = 5.5V
Fall Time
-
1.84
3
µs
-
2.58
4
µs
-
3.32
5
µs
Eoff (**)
Turn-off Switching Loss
-
7.72
11
mJ
tr(Voff)
Off Voltage Rise Time
-
2.5
4
µs
td (off)
Delay Time
-
1
2
µs
-
4.54
6
µs
-
8.63
15
mJ
tf
Eoff (**)
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VCC = 250V, IC =10A, RGE =1K
Ω ,VGE = 5.5V ,Tj = 125 °C
Fall Time
Turn-off Switching Loss
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WGP15G65 Product Description
IC(A)
100
35
Ic @Temp=-40.0C
Ic @Temp=25.0C
Ic @Temp=125.0C
90
30
80
Vce
Vce
Vce
Vce
Vce
Vce
Vce
Vce
60
50
40
30
@Vgs=2.0V
@Vgs=3.0V
@Vgs=4.0V
@Vgs=5.0V
@Vgs=6.0V
@Vgs=7.0V
@Vgs=8.0V
@Vgs=10.0V
25
20
IC(A)
70
15
10
20
10
5
0
0
5
10
15
20
25
0
0
Vce(V)
1
2
3
4
5
6
7
VGE(V)
Output Characteristics
Transfer Characteristics
1.1
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
1.05
1
0.95
C(nF)
TJ(℃)
0.9
Ciss (nF)
Coss (nF)
Crss (nF)
0.85
0.8
0.75
0.7
0.65
0
0.6
-75
-25
25
75
125
10
20
175
30
40
50
60
70
VDS(V0
VGE(th)
Normalized Gate Threshold Voltage
vs Temp.
Capacitance Variations
9
8
VCE=280V,IC=10
7
VGE(V)
6
5
4
3
2
1
0
0
5
10
15
20
25
Qg(nC)
Gate Charge vs Gate-Emitter Voltage
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WGP15G65 Product Description
Switching Off
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WGP15G65 Product Description
TO-220C
Package Dimension
UnIt:mm
E
A
7
Q
F
D2
D
P
L
L2
B
符号
MIN
MAX
A
4.30
4.70
B
1.10
1.40
b
0.70
0.95
c
0.40
0.65
d
15.2
16.2
D2
9.00
9.40
E
9.70
10.10
e
2.39
2.69
F
1.25
1.40
L
12.60
13.60
L2
2.80
3.20
Q
2.60
3.00
Q1
2.20
2.60
P
3.50
3.80
b
c
Q1
e
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e
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WGP15G65 Product Description
NOTE:
1.We strongly recommend customers check carefully on the trademark when buying our product, if there is
any question, please don't be hesitate to contact us.
2.Please do not exceed the absolute maximum ratings of the device when circuit designing.
3.Winsemi Microelectronics Co., Ltd reserved the right to make changes in this specification sheet and is
subject to change without prior notice.
CONTACT:
Winsemi Microelectronics Co., Ltd.
ADD:Futian District, ShenZhen Tian An Cyber Tech Plaza two East Wing 1002
Post Code : 518040
Tel : 86-0755-82506257
FAX : 86-0755-82506299
Web Site : www.winsemi.com
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