WFF18N50L Product Description
Silicon N-Channel MOSFET
Features
D
18A,500V,RDS(on)(Max0.31Ω)@VGS=10V
Ultra-low Gate charge(Typical 37.9nC)
Fast Switching Capability
100%Avalanche Tested
Maximum Junction Temperature Range(150℃)
G
S
General Description
This Power
MOSFET is produced using Winsemi's advanced
planar stripe,VDMOS technology.this latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics .This devices is specially well
suited for half bridge and full bridge resonant topology line a
electronic
lamp ballast,
high efficiency switched mode power
supplies, active power factor correction.
Absolute Maximum Ratings
Symbol
VDSS
Parameter
Value
Units
Drain Source Voltage
500
V
Continuous Drain Current(@Tc=25℃)
18
A
Continuous Drain Current(@Tc=100℃)
11.4
A
72
A
±30
V
1502
mJ
54
W
0.43
W/℃
-55~150
℃
ID
IDM
Drain Current Pulsed
(Note1)
VGS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note2)
Total Power Dissipation(@Tc=25℃)
PD
Derating Factor above 25℃
TJ,Tstg
Junction and Storage Temperature
Thermal Characteristics
Value
Symbol
Parameter
Min
Typ
Max
Units
RQJC
Thermal Resistance , Junction -to -Case
-
-
2.31
℃/W
RQJA
Thermal Resistance , Junction-to -Ambient
-
-
120
℃/W
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WINSEMI
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WT-F088-Rev.A0 Oct. 2014
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WFF18N50L Product Description
Silicon N-Channel MOSFET
Electrical Characteristics(Tc=25℃)
Characteristics
Symbol
Test Condition
Min
Type
Max
Unit
IGSS
VGS=±30V,VDS=0V
-
-
±100
nA
V(BR)GSS
IG=±10 µA,VDS=0V
±30
-
-
V
IDSS
VDS=500V,VGS=0V
-
-
1.0
µA
V(BR)DSS
ID=250 µA,VGS=0V
500
-
-
V
Gate threshold voltage
VGS(th)
VDS=VGS,ID=250 µA
2
-
4
V
Drain -source ON resistance
RDS(ON)
VGS=10V,ID=9.0A
-
0.26
0.31
Ω
-
2320
-
-
7.15
-
-
282
-
-
131
-
-
60
-
-
75
-
-
115
-
-
37.9
-
-
12.5
-
-
12.1
-
Gate leakage current
Gate-source breakdown voltage
Drain Cut -off current
Drain -source breakdown voltage
Input capacitance
Ciss
VDS=25V,
Reverse transfer capacitance
Crss
VGS=0V,
Coss
Output capacitance
Turn-on Rise time
tr
Turn-on delay time
Td(on)
VDD=325V,
ID=18A
Switching time
ns
RG=25Ω
tf
Turn-off Fall time
pF
f=1MHz
(Note3,4)
Td(off)
Turn-off delay time
VDD=520V,
Total gate charge(gate-source
Qg
VGS=10V,
plus gate-drain)
Gate-source charge
Qgs
Gate-drain("miller") Charge
Qgd
nC
ID=18A
(Note3,4)
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol
Test Condition
Min
Type
Max
Unit
Continuous drain reverse current
IDR
-
-
-
18
A
Pulse drain reverse current
IDRP
-
-
-
72
A
Forward voltage(diode)
VDSF
IDR=18A,VGS=0V
-
-
1.3
V
Reverse recovery time
trr
IDR=18A,VGS=0V,
-
582.9
-
ns
Reverse recovery charge
Qrr
dIDR /dt =100 A /µs
-
7.1
-
µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=30mH IAS=8.6A,VDD=140V,RG=25Ω,Starting TJ=25℃
3.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
4. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
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WFF18N50L Product Description
Silicon N-Channel MOSFET
100
100
VGS
Top
4.5V
5.0V
5.5V
6.0V
7.0V
8.0V
10
10
I D [A ]
I D [ A]
10V
15V
25°C
150°C
1
-55°C
1
Notes:
1.250µs pulse test
2.Tc= 25°C
0.1
0.1
1
Not es:
1. 250µs pulse t est
2. V DS = 50V
0.1
0
100
10
2
1
3
4
6
5
VDS [V]
7
8
9
10
VGS[V]
Fig.1 On Region Characteristics
Fig.2 Transfer Characteristics
0.29
100
V GS=10V
10
150°C
I DR[A]
R DS(ON)[ Ω ]
0.28
0.27
Notes:
1.250µs pulse test
2.VGS =0V
-55°C
25°C
1
V GS=20V
0.26
Note:TJ =25°C
0.25
0.1
0
4
12
8
20
16
0
0.2
0.4
0.6
ID [A]
12
Ciss=Cgs+Cgd(Cds=shorted)
Coss=Cds+Cgd
Crss=Cgd
400V
10
4000
250V
100V
3500
8
3000
VGS (V)
pF
1.2
Fig.4 Body Diode Forward Voltage Variation vs.
Source Current and Temperature
5000
Coss
1.0
VSD [V]
Fig.3 On-Resistance Variation vs Drain
Current and Gate Voltage
4500
0.8
Ciss
2500
6
2000
Note:
1.VGS =0V
2.f=1MHz
1500
Crss
1000
4
2
500
Note:I D=18A
0
0.1
00
100
10
1
8
VDS [V]
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32
40
Qg(nC)
Fig.6 Gate Charge Characteristics
Fig.5 Capacitance Characteristics
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WFF18N50L Product Description
Silicon N-Channel MOSFET
1.2
3.0
2.5
R DS( ON)
BVDSS
1.1
1.0
2.0
1.5
1.0
0.9
Note:
1.VGS =0V
2.ID =250uA
0.8
-100
Note:
1.VGS =10V
2.ID =5.0A
0.5
0.0
-50
50
0
150
100
200
-100
-50
50
0
T J (°C )
200
Fig.8 On-Resistance Variation
vs. Temperature
2
18
100µs
16
1ms
10
150
T J (°C )
Fig.7 Breakdown Voltage Variation
vs. Temperature
10
100
14
1
10ms
ID [ A ]
I D [A ]
12
DC
10
0
O p e ra ti o n i n T h i s A re a
i s L i m i te d b y RDS(ON)
10
8
6
10
-1
4
N o te s:
10
1.Tc=25°C
2.TJ =150°C
3.Single pulse
-2
10
0
10
1
2
10
2
10
0
25
3
50
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Fig.10 Maximum Drain Current
vs Case temperature
Fig.9 Maximum Safe Operation Area
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Tc(°C )
VDS [V]
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75
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WFF18N50L Product Description
Silicon N-Channel MOSFET
50KΩ
12V
VGS
Same type
as DUT
Qg
200nF
10V
300nF
VD S
VGS
Qgs
Qgd
DUT
3mA
Ch a rg e
Fig.11 Gate Test circuit & Waveform
VD S
RG
RL
VD S
90%
VD D
VGS
VGS
DUT
10V
10%
td(on)
tr
td(off)
to n
tf
toff
Fig.12 Resistive Switching Test Circuit & Waveform
L
EAS =
VD S
BVD SS
BVD SS- V D D
BVD SS
IAS
ID
RG
VD D
DUT
10V
1
LIAS2
2
I D( t)
VD S(t )
VD D
tp
tp
Time
Fig.13 Unclamped Inductive Switching Test Circuit & Waveform
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WFF18N50L Product Description
Silicon N-Channel MOSFET
DUT
VD S
ISD
L
Driver
RG
Same Type
as DUT
VGS
VD D
dv/dt controlled by RG
ISD conteolled by pulse period
VGS
D=
(Driver)
Gate Pulse Width
Gate Pulse Period
10V
IFM ,Body Diode Forward Current
ISD
di/dt
(DUT)
IR M
Body Diode Reverse Current
VD S
(DUT)
Body Diode Recovery dv/dt
VD D
VSD
Body Diode
Forward Voltage Drop
Fig.14 Peak Diode Recovery dv/dt Test Circuit & Waveform
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WFF18N50L Product Description
Silicon N-Channel MOSFET
TO-220F
Package Dimension
Unit:mm
E
符 号
Symbol
MIN
MAX
A
4.5
4.9
B
-
1.47
b
0.7
0.9
c
0.45
0.6
D
15.67
16.07
E
9.96
10.36
Q
F
L2
D
P
2.54TYP.
e
L
B
b
C
F
2.34
2.74
L
12.58
13.38
L2
3.13
3.33
ФP
3.08
3.28
Q
3.2
3.4
Q1
2.56
2.96
Q1
e
A
e
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WFF18N50L Product Description
Silicon N-Channel MOSFET
NOTE:
1.We strongly recommend customers check carefully on the trademark when buying our product, if there is any
question, please don't be hesitate to contact us.
2.Please do not exceed the absolute maximum ratings of the device when circuit designing.
3.Winsemi Microelectronics Co., Ltd reserved the right to make changes in this specification sheet and is
subject to change without prior notice.
CONTACT:
Winsemi Microelectronics Co., Ltd.
ADD:Room 1002, East, Phase 2, HighTech Plaza,Tian-An Cyber Park,Che gong miao, FuTian, Shenzhen, P.R.
China.
Post Code : 518040
Tel : +86-755-8250 6288
FAX : +86-755-8250 6299
Web Site : www.winsemi.com
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