ROHM RSX1001T3_11

Data Sheet
Schottky barrier diode
RSX1001T3
Applications
Switching power supply
Dimensions (Unit : mm)
Structure
Features
1) Cathode common type.
(TO-220)
2) Low IR
(1) (2) (3)
3) High reliability
Construction
Silicon epitaxial planer
Absolute maximum ratings (Ta=25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current (*1)
Forward current surge peak (60Hz / 1cyc) (*1)
Junction temperature
Storage temperature
Limits
Symbol
VRM
VR
Io
IFSM
Tj
Tstg
Unit
V
V
A
A
30
30
10
150
150
40 to 150
C
C
(*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=132C
Electrical characteristic (Ta=25°C)
Parameter
Forward voltage
Reverse current
Reverse recovery time
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© 2011 ROHM Co., Ltd. All rights reserved.
Symbol
VF
Typ.
-
Max.
0.45
500
Unit
V
IR
Min.
-
jc
-
-
2.5
C/W
1/3
A
Conditions
IF=5A
VR=30V
junction to case
2011.05 - Rev.B
Data Sheet
RSX1001T3
Electrical characteristic curves
1000000
10
Ta=25℃
Ta=75℃
Ta=-25℃
0.1
100000
Ta=125℃
10000
Ta=75℃
Ta=25℃
100
Ta=-25℃
10
100
1
100
200
300
400
500
10
0
600
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
420
10
15
20
25
30
0
Ta=25℃
VR=30V
n=30pcs
REVERSE CURRENT:IR(uA)
450
390
380
400
350
300
250
200
150
100
AVE:402.0mV
1040
1020
1000
980
960
940
920
1000
150
100
50
AVE:235.0A
0
Ta=25℃
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
25
20
15
10
5
Ifsm
PEAK SURGE
FORWARD CURRENT:I FSM(A)
REVERSE RECOVERY TIME:trr(ns)
8.3ms
200
AVE:1006.7pF
Ct DISPERSION MAP
30
1cyc
8.3ms
10
AVE:17.2ns
1
1
10
1
10
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
IF=5A
IM=100mA
8
1ms
10
time
Rth(j-a)
300us
1
Rth(j-c)
FORWARD POWER
DISSIPATION:Pf(W)
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
PEAK SURGE
FORWARD CURRENT:I FSM(A)
100
100
10
100
t
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
trr DISPERSION MAP
IFSM DISPERSION MAP
Ifsm
8.3ms
1cyc
100
0
1000
30
Ta=25℃
f=1MHz
VR=0V
n=10pcs
IR DISPERSION MAP
Ifsm
25
900
VF DISPERSION MAP
250
20
1060
0
300
15
1080
AVE:148.6uA
50
370
10
1100
500
400
5
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
Ta=25℃
IF=5A
n=30pcs
410
5
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
0
FORWARD VOLTAGE:V F(mV)
1000
1000
0.01
PEAK SURGE
FORWARD CURRENT:I FSM(A)
f=1MHz
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE CURRENT:IR(uA)
FORWARD CURRENT:I F(A)
Ta=125℃
1
10000
Ta=150℃
Ta=150℃
DC
D=1/2
Sin(θ=180)
6
4
2
0.1
0.001
0
0.01
0.1
1
10
TIME:t(s)
Rth-t CHARACTERISTICS
2/3
100
1000
0
5
10
15
20
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
2011.05 - Rev.B
30
30
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
8
6
DC
D=1/2
4
Sin(θ=180)
2
0
0A
Io
0A
Io
0V
VR
0V
VR
t
20
DC
T
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
10
REVERSE POWER
DISSIPATION:PR (W)
Data Sheet
RSX1001T3
D=t/T
VR=15V
Tj=150℃
D=1/2
10
Sin(θ=180)
5
10
15
20
25
30
REVERSE VOLTAGE : VR(V)
VR-PR CHARACTERISTICS
DC
T
D=t/T
VR=15V
Tj=150℃
D=1/2
10
Sin(θ=180)
0
0
0
t
20
0
25
50
75
100
125
AMBIENT TEMPERATURE:Ta(℃)
Derating Curve"(Io-Ta)
150
0
25
50
75
100
125
150
CASE TEMPARATURE:Tc(℃)
Derating Curve"(Io-Tc)
30
No break at 30kV
No break at 30kV
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
25
20
15
10
5
0
C=200pF
R=0
C=100pF
R=1.5k
ESD DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
3/3
2011.05 - Rev.B
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Notes
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R1120A