ROHM 1SS400CS_11

Data Sheet
Switching Diode
1SS400CS
Dimensions (Unit : mm)
Applications
High speed switching
Land size figure (Unit : mm)
0.55
0.45
0.16±0.05
0.6±0.05
0.45
1.0±0.05
0.9±0.05
0.5
Features
1)Ultra small mold type.(VMN2)
2)High reliability.
VMN2
0.156
Construction
Silicon epitaxial planer
0.37±0.03
0.35±0.1
Structure
ROHM : VMN2
dot (year week factory)
Taping dimensions (Unit : mm)
2±0.05
0.7±0.05
2±0.05
φ1.55
0.2±0.05
8.0±0.2
1.1±0.05
3.5±0.05
1.75±0.1
4±0.1
φ0.5
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
VRM
Reverse voltage (repetitive peak)
Reverse voltage (DC)
VR
Forward current (repetitive peak)
IFM
Average rectified forward current
Io
Isurge
Surge current (1S)
Junction temperature
Tj
Storage temperature
Tstg
Electrical characteristics (Ta=25C)
Parameter
Symbol
VF
Forward voltage
Limits
0.52
4.0±0.1
Unit
V
V
mA
mA
mA
C
C
90
80
225
100
500
150
55 to 150
Min.
Typ.
Max.
Unit
-
-
1.2
V
IF=100mA
Conditions
Reverse current
IR
-
-
100
nA
VR=80V
Capacitance　between terminal
Reverse recovery time
Ct
-
-
3.0
pF
trr
-
-
4.0
ns
VR=0.5V　f=1.0MHz
VR=6V　IF=10mA　RL＝100Ω
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© 2011 ROHM Co., Ltd. All rights reserved.
1/4
2011.12 - Rev.A
Data Sheet
1SS400CS
Ta=150°C
100000
1000
Ta=125°C
10000
REVERSE CURRENT:IR(nA)
FORWARD CURRENT:IF(mA)
Ta=150°C
100
Ta=125°C
10
Ta=75°C
Ta=25°C
1
Ta=75°C
1000
100
Ta=25°C
10
Ta=-25°C
Ta=-25°C
0.1
1
0.01
0.1
0
200
400
600
800
1000
1200
1400
0
20
40
60
80
100
120
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
920
10
FORWARD VOLTAGE:VF(mV)
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
f=1MHz
1
Ta=25°C
VF=100mA
n=30pcs
910
900
890
AVE:888.3mV
880
0.1
870
0
5
10
15
20
VF DISPERSION MAP
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
200
1
REVERSE CURRENT:IR(nA)
160
140
120
100
80
60
Ta=25°C
f=1MHz
VR=0.5V
n=10pcs
0.9
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ta=25°C
VR=80V
n=30pcs
180
0.8
0.7
0.6
0.5
0.4
AVE:0.595pF
0.3
AVE:20.90nA
40
0.2
20
0.1
0
0
Ct DISPERSION MAP
IR DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
2/4
2011.12 - Rev.A
Data Sheet
1SS400CS
2
IFSM
REVERSE RECOVERY TIME:trr(ns)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
20
8.3ms
15
1cyc
10
AVE:3.90A
5
Ta=25°C
VR=6V
IF=10mA
RL=100Ω
n=10pcs
1.8
1.6
1.4
AVE:1.489ns
1.2
1
0
trr DISPERSION MAP
IFSM DISPERSION MAP
10
10
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
IFSM
8.3ms 8.3ms
1cyc
5
0
5
0
1
10
100
1
10
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
10
1000
8
7
6
AVE:6.48kV
5
4
3
AVE:1.60kV
2
TRANSIENT
THERMAL IMPEDANCE:Rth(°C/W)
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
9
Rth(j-a)
Rth(j-c)
100
1
0
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
10
0.001
0.1
1
10
100
1000
TIME:t(s)
Rth-t CHARACTERISTICS
ESD DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
0.01
3/4
2011.12 - Rev.A
0.3
0.003
REVERSE POWER
DISSIPATION:PR (W)
FORWARD POWER
DISSIPATION:Pf(W)
Data Sheet
1SS400CS
0.2
D=1/2
0.1
Sin(θ＝180)
0.002
D=1/2
0.001
DC
Sin(θ＝180)
DC
0
0
0
0.05
0.1
0.15
0.2
0
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
20
40
60
80
100
120
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
0.3
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
0.25
0.2
DC
0.15
D=1/2
0.1
Sin(θ＝180)
0.05
0
0
25
50
75
100
125
150
CASE TEMPARATURE:Ta(°C)
DERATING CURVE(Io-Ta)
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© 2011 ROHM Co., Ltd. All rights reserved.
4/4
2011.12 - Rev.A
Notice
Notes
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© 2011 ROHM Co., Ltd. All rights reserved.
R1120A