AOS Semiconductor Product Reliability Report AOTF15S65L, rev A Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc www.aosmd.com 1 This AOS product reliability report summarizes the qualification result for AOTF15S65L. Accelerated environmental tests are performed on a specific sample size, and then followed by electrical test at end point. Review of final electrical test result confirms that AOTF15S65L passes AOS quality and reliability requirements. The released product will be categorized by the process family and be monitored on a quarterly basis for continuously improving the product quality. Table of Contents: I. II. III. IV. Product Description Package and Die information Environmental Stress Test Summary and Result Reliability Evaluation I. Product Description: The AOTF15S65L has been fabricated using the advanced MOS high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs. TM Details refer to the datasheet. II. Die / Package Information: AOTF15S65L Standard sub-micron TM 650V, 15A αMOS Power Transistor Package Type TO220F Lead Frame Bare Cu Die Attach Soft solder Bonding Al wire Mold Material Epoxy resin with silica filler Moisture Level Up to Level 1 * Note * based on info provided by assembler and mold compound supplier Process 2 III. Result of Reliability Stress for AOTF15S65L Test Item Test Condition Time Point MSL Precondition 168hr 85°c /85%RH +3 cycle reflow@260°c Temp = 150°c , Vgs=100% of Vgsmax - Temp = 150°c , Vds=80% of Vdsmax 168hrs 500 hrs 1000 hrs HAST 130 , 85%RH, 33.3 psi, Vgs = 100% of Vgs max 96 hrs Pressure Pot 121°c , 29.7psi, RH=100% 96 hrs HTGB 168hrs 500 hrs 1000 hrs Lot Attribution Total Sample size 6 lots 1254pcs 0 JESD22A113 462pcs 0 JESD22A108 Temperature Cycle -65°c to 150°c , air to air, 250 / 500 cycles Reference Standard 77 pcs / lot 462pcs 0 JESD22A108 (Note A*) 6 lots 77 pcs / lot 330pcs 0 JESD22A110 (Note A*) 6 lots 55 pcs / lot 462pcs 0 JESD22A102 (Note A*) 77 pcs / lot 0 JESD22A104 6 lots (Note A*) HTRB Number of Failures 6 lots 6 lots (Note A*) 462pcs 77 pcs / lot Note A: The reliability data presents total of available generic data up to the published date. IV. Reliability Evaluation FIT rate (per billion): 4 MTTF = 29742 years The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in sample size of the selected product (AOTF15S65L). Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one failure per billion hours. 2 9 Failure Rate = Chi x 10 / [2 (N) (H) (Af)] = 1.83 x 10 9 8 MTTF = 10 / FIT =2.61 x 10 hrs = 29742 years 9 / [2x (12x77x1000) x258] = 4 Chi²= Chi Squared Distribution, determined by the number of failures and confidence interval N = Total Number of units from HTRB and HTGB tests H = Duration of HTRB/HTGB testing Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C) Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s)] Acceleration Factor ratio list: 55 deg C 70 deg C 85 deg C 100 deg C 115 deg C Af 258 87 32 13 5.64 Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16 Tj u =The use junction temperature in degree (Kelvin), K = C+273.16 k = Boltzmann’s constant, 8.617164 X 10-5eV / K 130 deg C 150 deg C 2.59 1 3