® RT6216F 2.5A, 23V, 800kHz, ACOTTM Step-Down Converter General Description Features The RT6216F is a high-efficiency, monolithic synchronous step-down DC/DC converter that can deliver up to 2.5A output current from a 4.5V to 23V input supply. The RT6216F adopts ACOT architecture to allow the transient response to be improved and keep in constant frequency. Cycle-by-cycle current limit provides protection against shorted outputs and soft-start eliminates input current Integrated 85mΩ /40mΩ MOSFETs surge during start-up. Fault conditions also include output under voltage protection and thermal shutdown. 4.5V to 23V Supply Voltage Range 800kHz Switching Frequency ACOT Control 0.791V ± 1.5% Voltage Reference Monotonic Start-Up into Pre-biased Outputs Output Adjustable from 0.791V to 6V Compact Package : TSOT-23-8 (FC) Applications Ordering Information RT6216F Package Type J8F : TSOT-23-8 (FC) Lead Plating System G : Green (Halogen Free and Pb Free) UVP Option H : Hiccup Set Top Box Portable TV Access Point Router DSL Modem LCD TV Notebook Systems and I/O Power Flat Panel Television and Monitors Pin Configurations Note : Richtek products are : (TOP VIEW) EN BOOT 8 7 6 5 2 3 4 GND Suitable for use in SnPb or Pb-free soldering processes. Marking Information MODE 0V= : Product Code 0V=DNN DNN : Date Code VIN SW ments of IPC/JEDEC J-STD-020. NC RoHS compliant and compatible with the current requireFB TSOT-23-8 (FC) Simplified Application Circuit RT6216F VIN VIN BOOT EN SW CIN Enable MODE R3 CBOOT L VOUT R1 MODE CFF COUT FB GND Copyright © 2016 Richtek Technology Corporation. All rights reserved. DS6216F-01 May 2016 R2 is a registered trademark of Richtek Technology Corporation. www.richtek.com 1 RT6216F Functional Pin Description Pin No. Pin Name Pin Function 1 MODE Mode select input. MODE = H, to force IC into CCM. Tie to ground, to select pulse skipping mode. Do not float. Connect MODE to VIN with a 100k resistor for CCM application. 2 VIN Input Voltage. Support 4.5V to 23V Input Voltage. Must bypass with a suitable large ceramic capacitor at this pin. 3 SW Switch node. Connect to external L-C filter. 4 GND System Ground. 5 BOOT Bootstrap, supply for high side gate driver. Connect a 0.1F ceramic capacitor between the BOOT and SW pins. 6 EN Buck Enable. High = Enable. 7 NC This pin is left floating. 8 FB Feedback Input. The pin is used to set the output voltage of the converter to regulate to the desired via a resistive divider. Function Block Diagram NC VIN MODE BOOT VIN VCC Minoff Reg 3.5V VCC UGATE OC VIBIAS Control Driver SW VREF LGATE UV GND GND SW VCC SW Ripple Gen. EN + + Comparator FB Copyright © 2016 Richtek Technology Corporation. All rights reserved. www.richtek.com 2 EN VIN On Time SW is a registered trademark of Richtek Technology Corporation. DS6216F-01 May 2016 RT6216F Operation The RT6216F is a high-efficiency, monolithic synchronous step-down DC/DC converter that can deliver up to 2.5A output current from a 4.5V to 23V input supply. Using the ACOTTM control mode can reduce the output capacitance and perform fast transient response. It can minimize the component size without additional external compensation network. Current Protection The inductor current is monitored via the internal switches cycle-by-cycle. Once the output voltage drops under UV threshold, the RT6216F will enter hiccup mode. operation when the junction temperature exceeds the OTP threshold value. Once the junction temperature cools down and is lower than the OTP lower threshold, the IC will resume normal operation. UVP Protection The RT6216F detects under-voltage conditions by monitoring the feedback voltage on FB pin. When the feedback voltage is lower than 50% of the target voltage, the UVP comparator will go high to turn off both internal high-side and low-side MOSFETs. Hiccup Mode The RT6216F use hiccup mode for UVP. When the protection function is triggered, the IC will shut down for a period of time and then attempt to recover automatically. Hiccup mode allows the circuit to operate safely with low input current and power dissipation, and then resume normal operation as soon as the overload or short circuit is removed. Input Under-Voltage Lockout To protect the chip from operating at insufficient supply voltage, the UVLO is needed. When the input voltage of VIN is lower than the UVLO falling threshold voltage, the device will be lockout. Shut-Down, Start-Up and Enable (EN) The enable input (EN) has a logic-low level. When VEN is below this level the IC enters shutdown mode. When VEN exceeds its logic-high level the IC is fully operational. External Bootstrap Capacitor Connect a 0.1μF low ESR ceramic capacitor between BOOT and SW. This bootstrap capacitor provides the gate driver supply voltage for the high side N-channel MOSFET switch. Over-Temperature Protection The RT6216F includes an Over-Temperature Protection (OTP) circuitry to prevent overheating due to excessive power dissipation. The OTP will shut down switching Copyright © 2016 Richtek Technology Corporation. All rights reserved. DS6216F-01 May 2016 is a registered trademark of Richtek Technology Corporation. www.richtek.com 3 RT6216F Absolute Maximum Ratings (Note 1) Supply Input Voltage, VIN ----------------------------------------------------------------------------------------EN Pin Voltage, EN ------------------------------------------------------------------------------------------------ Switch Voltage, SW -----------------------------------------------------------------------------------------------<10ns ------------------------------------------------------------------------------------------------------------------ BOOT to SW, VBOOT − VSW ---------------------------------------------------------------------------------------------------------------------------- Other Pins ------------------------------------------------------------------------------------------------------------ Power Dissipation, PD @ TA = 25°C TSOT-23-8 (FC) ----------------------------------------------------------------------------------------------------- Package Thermal Resistance (Note 2) TSOT-23-8 (FC), θJA ------------------------------------------------------------------------------------------------TSOT-23-8 (FC), θJC ----------------------------------------------------------------------------------------------- Junction Temperature ---------------------------------------------------------------------------------------------- Lead Temperature (Soldering, 10 sec.) ------------------------------------------------------------------------ Storage Temperature Range ------------------------------------------------------------------------------------- ESD Susceptibility (Note 3) HBM (Human Body Model) --------------------------------------------------------------------------------------- Recommended Operating Conditions −0.3V to 26V −0.3V to 26V −0.3V to (VIN + 0.3V) −5V to 28V −0.3V to 6V −0.3V to 6V 1.429W 70°C/W 15°C/W 150°C 260°C −65°C to 150°C 2kV (Note 4) Supply Input Voltage ------------------------------------------------------------------------------------------------ 4.5V to 23V Junction Temperature Range -------------------------------------------------------------------------------------- −40°C to 125°C Ambient Temperature Range -------------------------------------------------------------------------------------- −40°C to 85°C Electrical Characteristics (VIN = 12V, TA = 25°C, unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 4.5 -- 23 V 3.7 3.9 4.1 V -- 350 -- mV Supply Voltage VIN Supply Input Operating Voltage VIN VIN Under-Voltage Lockout Threshold VUVLO VIN Under-Voltage Lockout Threshold-Hysteresis VUVLO VIN Rising Supply Current Supply Current (Shutdown) ISHDN VEN = 0V -- -- 10 A Supply Current (Quiescent) IQ VEN = 2V, VFB = 1V, VMODE = 0V (Not Switching) -- 150 250 A tSS VFB from 0% to 100% -- 1500 -- s Soft-Start Internal Soft-Start Period Enable Voltage EN Rising Threshold VENH 1.2 1.4 1.6 V EN Hysteresis VEN 80 150 220 mV Copyright © 2016 Richtek Technology Corporation. All rights reserved. www.richtek.com 4 is a registered trademark of Richtek Technology Corporation. DS6216F-01 May 2016 RT6216F Parameter Symbol Test Conditions Min Typ Max Unit Mode Input Voltage Mode Input High Voltage VMODEH 2 -- -- V Mode Input Low Voltage VMODEL -- -- 0.4 V 779 791 803 mV -- 85 -- m -- 40 -- m ILIM_L 2.7 3.2 -- A ILIM_H -- 5.5 -- A f SW -- 800 -- kHz Maximum Duty Cycle DMAX -- 84 -- % Minimum On-Time tON -- 60 -- ns Thermal Shutdown TSD -- 160 -- C Thermal Hysteresis TSD -- 25 -- C UVP detect -- 50 -- % Hysteresis -- 10 -- % Feedback Threshold Voltage Feedback Threshold Voltage VFB Internal MOSFET High-Side Switch-On Resistance RDS(ON)_H Low-Side Switch-On Resistance RDS(ON)_L Current Limit Low-Side Switch Valley Current Limit High-Side Switch Peak Current Limit Switching Frequency Switching Frequency VBOOTVSW = 4.8V On-Time Timer Control Thermal Shutdown Output Under Voltage Protections UVP Trip Threshold Note 1. Stresses beyond those listed “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions may affect device reliability. Note 2. θJA is measured at TA = 25°C on a high effective thermal conductivity four-layer test board per JEDEC 51-7. The first layer of copper area is filled. θJC is measured at the exposed pad of the package. Note 3. Devices are ESD sensitive. Handling precaution is recommended. Note 4. The device is not guaranteed to function outside its operating conditions. Copyright © 2016 Richtek Technology Corporation. All rights reserved. DS6216F-01 May 2016 is a registered trademark of Richtek Technology Corporation. www.richtek.com 5 RT6216F Typical Application Circuit RT6216F VIN 4.5V to 23V 2 CIN 22µF 6 Enable VIN BOOT 5 EN SW 1 MODE MODE R3 20 3 CBOOT 0.1µF L 1µH R1 6.49k FB CFF Option 8 C1 22µF C2 22µF VOUT 1.05V R2 20k GND 4 Table 1. Suggested Component Values VOUT (V) R1 (k) R2 (k) L (H) COUT (F) CFF (pF) 1.05 6.49 20 1 44 -- 1.2 10.5 20 1 44 -- 1.8 25.5 20 2.2 44 -- 2.5 43.2 20 2.2 44 22 to 68 3.3 63.4 20 3.3 44 22 to 68 5 107 20 3.3 44 22 to 68 Note : All the input and output capacitors are the suggusted values, refering to the effective capacitances, subject to any de-rating effect, like a DC Bias. Copyright © 2016 Richtek Technology Corporation. All rights reserved. www.richtek.com 6 is a registered trademark of Richtek Technology Corporation. DS6216F-01 May 2016 RT6216F Typical Operating Characteristics Efficiency vs. Output Current Output Voltage vs. Output Current 100 1.20 90 1.15 Output Voltage (V) Efficiency (%) 80 70 VIN = 4.5V VIN = 12V VIN = 19V VIN = 23V 60 50 40 30 20 1.10 1.05 VIN = 4.5V VIN = 12V VIN = 19V VIN = 23V 1.00 10 VOUT = 1.05V 0 0.001 VOUT = 1.05V 0.95 0.01 0.1 1 10 0 0.25 0.5 0.75 Output Current (A) UVLO Threshold vs. Temperature 2 2.25 2.5 EN Threshold vs. Temperature 1.60 1.55 4.0 Rising 1.50 3.9 EN Threshold (V) UVLO Threshold (V) 1.25 1.5 1.75 Output Current (A) 4.1 3.8 3.7 3.6 Falling 3.5 EN_H 1.45 1.40 1.35 1.30 EN_L 1.25 1.20 1.15 1.10 3.4 1.05 VOUT = 1.05V, IOUT = 1A 3.3 VOUT = 1.05V, IOUT = 0A 1.00 -50 -25 0 25 50 75 100 -50 125 -25 0 Temperature (°C) 25 50 75 100 125 Temperature (°C) Output Voltage vs. Temperature Output Voltage vs. Temperature 1.200 5.10 1.175 5.08 5.06 1.150 1.125 Output Voltage (V) Output Voltage (V) 1 VIN = 4.5V VIN = 12V VIN = 23V 1.100 1.075 1.050 5.04 VIN = 7V VIN = 12V VIN = 23V 5.02 5.00 4.98 4.96 4.94 1.025 VOUT = 1.05V, IOUT = 1A 1.000 4.92 VOUT = 5V, IOUT = 1A 4.90 -50 -25 0 25 50 75 100 Temperature (°C) Copyright © 2016 Richtek Technology Corporation. All rights reserved. DS6216F-01 May 2016 125 -50 -25 0 25 50 75 100 125 Temperature (°C) is a registered trademark of Richtek Technology Corporation. www.richtek.com 7 RT6216F Load Transient Response Output Ripple Voltage VIN = 12V, VOUT = 1.05V, IOUT = 1.25A to 2.5A, L = 1μH VIN = 12V, VOUT = 1.05V, IOUT = 2.5A, L = 1μH VOUT (20mV/Div) VOUT (20mV/Div) IOUT (1A/Div) VSW (5V/Div) Time (100μs/Div) Time (2μs/Div) Power On from EN Power Off from EN VOUT (1V/Div) VOUT (1V/Div) VEN (2V/Div) VEN (2V/Div) VSW (10V/Div) IOUT (2A/Div) VSW (10V/Div) VIN = 12V, VOUT = 1.05V, IOUT = 2.5A, L = 1μH IOUT (2A/Div) Time (5ms/Div) Time (200μs/Div) Power On from VIN Power Off from VIN VIN = 12V, VOUT = 1.05V, IOUT = 2.5A, L = 1μH VOUT (1V/Div) VOUT (1V/Div) VIN = 12V, VOUT = 1.05V, IOUT = 2.5A, L = 1μH VIN (10V/Div) VIN (10V/Div) VSW (10V/Div) VSW (10V/Div) IOUT (2A/Div) IOUT (2A/Div) Time (10ms/Div) Copyright © 2016 Richtek Technology Corporation. All rights reserved. www.richtek.com 8 VIN = 12V, VOUT = 1.05V, IOUT = 2.5A, L = 1μH Time (10ms/Div) is a registered trademark of Richtek Technology Corporation. DS6216F-01 May 2016 RT6216F Application Information Inductor Selection The consideration of inductor selection includes inductance, RMS current rating and, saturation current rating. The inductance selection is generally flexible and is optimized for the low cost, low physical size, and high system performance. Choosing lower inductance to reduce physical size and cost, and it is useful to improve the transient response. However, it causes the higher inductor peak current and output ripple voltage to decrease system efficiency. Conversely, higher inductance increase system efficiency, but the physical size of inductor will become larger and transient response will be slow because more transient time is required to change current (up or down) by inductor. A good compromise between size, efficiency, and transient response is to set a inductor ripple current (ΔIL) about 20% to 50% of the desired full output load current. Calculate the approximate inductance by the input voltage, output voltage, switching frequency (fSW), maximum rated output current (IOUT(MAX)) and inductor ripple current (ΔIL). Once the inductance is chosen, the inductor ripple current (ΔIL) and peak inductor current can be calculated. VOUT VIN VOUT VIN fSW L IL(PEAK) = IOUT(MAX) 1 IL 2 IL(VALLY) = IOUT(MAX) 1 IL 2 IL = For the typical operating circuit design, the output voltage is 1.05V, maximum rated output current is 2.5A, input voltage is 12V, and inductor ripple current is 1.25A which is 50% of the maximum rated output current, the calculated inductance value is : 1.05 12 1.05 12 800 103 1.25 = 0.96μH Copyright © 2016 Richtek Technology Corporation. All rights reserved. DS6216F-01 May 2016 IL = 1.05 12 1.05 = 1.2A 12 800 103 1 10-6 IL(PEAK) = IOUT(MAX) 1 IL = 2.5 + 1.2 = 3.1A 2 2 Inductor saturation current should be chosen over IC's current limit. Input Capacitor Selection The input filter capacitors are needed to smooth out the RMS input ripple current drawn from the input power source and ripple voltage seen at the input of the converter. The voltage rating of the input filter capacitors must be greater than the maximum input voltage. Its also important to consider the ripple current capabilities of capacitors. The RMS input ripple current (IRMS) is a function of the input voltage (VIN), output voltage (VOUT), and rated output current (IOUT) : V IRMS = IOUT(MAX) OUT VIN VOUT VIN VOUT L= VIN fSW IL L= The inductor ripple current set at 1.25A and so we select 1μH inductance. The actual inductor ripple current and required peak current is shown as below : VIN 1 VOUT The maximum RMS input ripple current occurs at maximum output load and it needs to be concerned about the ripple current capabilities of capacitors at maximum output load. Ceramic capacitors are most often used because of their low cost, small size, high RMS current ratings, and robust surge current capabilities. It should pay attention that value of capacitors change as temperature, bias voltage, and operating frequency change. For example the capacitance value of a capacitor decreases as the dc bias across the capacitor increases. However, take care when these capacitors are used at the input of circuits supplied by a wall adapter or other supply connected through long and thin wires. Current surges through the inductive wires can induce ringing at the IC's power input which could potentially cause large, damaging voltage spikes at VIN pin. If this phenomenon is observed, some bulk input capacitance may be is a registered trademark of Richtek Technology Corporation. www.richtek.com 9 RT6216F required. Ceramic capacitors can be placed in parallel with other types such as tantalum, electrolytic, or polymer to reduce voltage ringing and overshoot. Choose capacitors rated at higher temperatures than required. Several ceramic capacitors may be paralleled to meet the RMS current, size, and height requirements of the application. The typical operating circuit use 22μF and one 0.1μF low ESR ceramic capacitors on the input. Output Capacitor Selection The RT6216F is optimized for output terminal with ceramic capacitors application and best performance will be obtained using them. The total output capacitance value is usually determined by the desired output ripple voltage level and transient response requirements for sag which is undershoot on positive load steps and soar which is overshoot on negative load steps. Output Ripple Voltage Output ripple voltage at the switching frequency is caused by the inductor current ripple and its effect on the output capacitor's ESR and stored charge. These two ripple components are called ESR ripple and capacitive ripple. Since ceramic capacitors have extremely low ESR and relatively little capacitance, both components are similar in amplitude and both should be considered if ripple is critical. VRIPPLE = VRIPPLE(ESR) VRIPPLE(C) VRIPPLE(ESR) = IL RESR IL 8 COUT fSW For the typical operating circuit design, the output voltage is 1.05V, inductor ripple current is 1.2A, and using 2 pieces of 22μF output capacitor with about 5mΩ ESR, the output voltage ripple components are : Output Transient Undershoot and Overshoot In addition to output ripple voltage at the switching frequency, the output capacitor and its ESR also affect the voltage sag (undershoot) and soar (overshoot) when the load steps up and down abruptly. The ACOTTM transient response is very quick and output transients are usually small. However, the combination of small ceramic output capacitors (with little capacitance), low output voltages (with little stored charge in the output capacitors), and low duty cycle applications (which require high inductance to get reasonable ripple currents with high input voltages) increases the size of voltage variations in response to very quick load changes. Typically, load changes occur slowly with respect to the IC's 800kHz switching frequency. But some modern digital loads can exhibit nearly instantaneous load changes and the following section shows how to calculate the worst-case voltage swings in response to very fast load steps. The output voltage transient undershoot and overshoot each have two components : the voltage steps caused by the output capacitor's ESR, and the voltage sag and soar due to the finite output capacitance and the inductor current slew rate. Use the following formulas to check if the ESR is low enough (typically not a problem with ceramic capacitors) and the output capacitance is large enough to prevent excessive sag and soar on very fast load step edges, with the chosen inductor value. The amplitude of the ESR step up or down is a function of the load step and the ESR of the output capacitor : VRIPPLE(C) = VESR_STEP = IOUT RESR VRIPPLE(ESR) = IL RESR = 1.2A 2.5m = 3mV The amplitude of the capacitive sag is a function of the load step, the output capacitor value, the inductor value, the input-to-output voltage differential, and the maximum duty cycle. The maximum duty cycle during a fast transient is a function of the on-time and the minimum off-time since the ACOTTM control scheme will ramp the current using on-times spaced apart with minimum off-times, which is as fast as allowed. Calculate the approximate on-time (neglecting parasitic) and maximum duty cycle for a given input and output voltage as : IL 1.2A = 8 COUT fSW 8 44μF 800kHz = 6.8mV = VRIPPLE(ESR) VRIPPLE(C) = 9.8mV VRIPPLE(C) = VRIPPLE tON = Copyright © 2016 Richtek Technology Corporation. All rights reserved. www.richtek.com 10 VOUT tON and DMAX = VIN fSW tON tOFF(MIN) is a registered trademark of Richtek Technology Corporation. DS6216F-01 May 2016 RT6216F The actual on-time will be slightly longer as the IC compensates for voltage drops in the circuit, but we can neglect both of these since the on-time increase compensates for the voltage losses. Calculate the output voltage sag as : L (IOUT )2 VSAG = 2 COUT VIN(MIN) DMAX VOUT The amplitude of the capacitive soar is a function of the load step, the output capacitor value, the inductor value and the output voltage : L (IOUT )2 VSOAR = 2 COUT VOUT connected between VIN and the EN pin. MOSFET Q1 will be under logic control to pull down the EN pin. To prevent enabling circuit when VIN is smaller than the VOUT target value or some other desired voltage level, a resistive voltage divider can be placed between the input voltage and ground and connected to EN to create an additional input under voltage lockout threshold (Figure 4). EN VIN REN EN RT6216F CEN GND Figure 2. External Timing Control Feed-forward Capacitor (Cff) The RT6216F is optimized for ceramic output capacitors and for low duty cycle applications. However for high-output voltages, with high feedback attenuation, the circuit's transient response can be slowed. The high-output voltage circuits transient response could be improved by adding a small “feedforward” capacitor (Cff) across the upper FB divider resistor (Figure 1).Choose a suitable capacitor value that following suggested component BOM. VIN EN Q1 Enable Figure 3. Digital Enable Control Circuit REN1 EN REN2 R1 RT6216F GND VIN VOUT REN 100k RT6216F GND Cff FB RT6216F R2 Figure 4. Resistor Divider for Lockout Threshold Setting GND Output Voltage Setting Figure 1. Cff Capacitor Setting Enable Operation (EN) There is an internal 1MEG resistor from EN to GND. For automatic start-up the high-voltage EN pin can be connected to VIN, through a 100kΩ resistor. Its large hysteresis band makes EN useful for simple delay and timing circuits. EN can be externally pulled to VIN by adding a resistor-capacitor delay (REN and CEN in Figure 2). Calculate the delay time using EN's internal threshold where switching operation begins. An external MOSFET can be added to implement digital control of EN when no system voltage above 2V is available (Figure 3). In this case, a 100kΩ pull-up resistor, REN, is Copyright © 2016 Richtek Technology Corporation. All rights reserved. DS6216F-01 May 2016 Set the desired output voltage using a resistive divider from the output to ground with the midpoint connected to FB. The output voltage is set according to the following equation : VOUT 0.791V (1 + R1 ) R2 VOUT R1 FB RT6216F R2 GND Figure 5. Output Voltage Setting is a registered trademark of Richtek Technology Corporation. www.richtek.com 11 RT6216F Place the FB resistors within 5mm of the FB pin. To minimize power consumption without excessive noise pick-up, considering typical application, fix R2 = 20kΩ and calculate R1 as follows : R2 (VOUT VREF ) VREF For output voltage accuracy, use divider resistors with 1% or better tolerance. PD(MAX) = (TJ(MAX) − TA) / θJA External BOOT Bootstrap Diode When the input voltage is lower than 5.5V it is recommended to add an external bootstrap diode between VIN and the BOOT pin to improve enhancement of the internal MOSFET switch and improve efficiency. The bootstrap diode can be a low cost one such as 1N4148 or BAT54. External BOOT Capacitor Series Resistance The internal power MOSFET switch gate driver is optimized to turn the switch on fast enough for low power loss and good efficiency, but also slow enough to reduce EMI. Switch turn-on is when most EMI occurs since VSW rises rapidly. During switch turn-off, SW is discharged relatively slowly by the inductor current during the dead time between high-side and low-side switch on-times. In some cases it is desirable to reduce EMI further, at the expense of some additional power dissipation. The switch turn-on can be slowed by placing a small (<47Ω) resistance between BOOT and the external bootstrap capacitor. This will slow the high-side switch turn-on and VSW's rise. To remove the resistor from the capacitor charging path (avoiding poor enhancement due to undercharging the BOOT capacitor), use the external diode shown in Figure 6 to charge the BOOT capacitor and place the resistance between BOOT and the capacitor/diode connection. 5V where TJ(MAX) is the maximum junction temperature, TA is the ambient temperature, and θJA is the junction to ambient thermal resistance. For recommended operating condition specifications, the maximum junction temperature is 125°C. The junction to ambient thermal resistance, θJA, is layout dependent. For TSOT-23-8 (FC) package, the thermal resistance, θJA, is 70°C/W on a standard four-layer thermal test board. The maximum power dissipation at TA = 25°C can be calculated by the following formula : PD(MAX) = (125°C − 25°C) / (70°C/W) = 1.429W for TSOT-23-8 (FC) package The maximum power dissipation depends on the operating ambient temperature for fixed T J(MAX) and thermal resistance, θJA. The derating curve in Figure 7 allows the designer to see the effect of rising ambient temperature on the maximum power dissipation. 2.0 Four-Layer PCB 1.5 1.0 0.5 0.0 BOOT RT6216F For continuous operation, do not exceed absolute maximum junction temperature. The maximum power dissipation depends on the thermal resistance of the IC package, PCB layout, rate of surrounding airflow, and difference between junction and ambient temperature. The maximum power dissipation can be calculated by the following formula : Maximum Power Dissipation (W)1 R1 Thermal Considerations 0 0.1µF SW 25 50 75 100 125 Ambient Temperature (°C) Figure 7. Derating Curve of Maximum Power Dissipation Figure 6. External Bootstrap Diode Copyright © 2016 Richtek Technology Corporation. All rights reserved. www.richtek.com 12 is a registered trademark of Richtek Technology Corporation. DS6216F-01 May 2016 RT6216F Outline Dimension Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 0.700 1.000 0.028 0.039 A1 0.000 0.100 0.000 0.004 B 1.397 1.803 0.055 0.071 b 0.220 0.380 0.009 0.015 C 2.591 3.000 0.102 0.118 D 2.692 3.099 0.106 0.122 e 0.585 0.715 0.023 0.028 H 0.080 0.254 0.003 0.010 L 0.300 0.610 0.012 0.024 TSOT-23-8 (FC) Surface Mount Package Richtek Technology Corporation 14F, No. 8, Tai Yuen 1st Street, Chupei City Hsinchu, Taiwan, R.O.C. Tel: (8863)5526789 Richtek products are sold by description only. Richtek reserves the right to change the circuitry and/or specifications without notice at any time. Customers should obtain the latest relevant information and data sheets before placing orders and should verify that such information is current and complete. Richtek cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Richtek product. Information furnished by Richtek is believed to be accurate and reliable. However, no responsibility is assumed by Richtek or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Richtek or its subsidiaries. DS6216F-01 May 2016 www.richtek.com 13