Specification Comparison Vishay Siliconix Si2307CDS vs. Si2307DS Description: Package: Pin Out: Single P-Channel, MOSFET SOT-23 Identical Part Number Replacements: Si2307CDS-T1-E3 or Si2307CDS-T1-GE3 replaces Si2307DS-T1 Si2307CDS-T1-E3 or Si2307CDS-T1-GE3 replaces Si2307DS-T1-E3 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted SYMBOL Si2307CDS Si2307DS Drain-Source Voltage PARAMETER VDS - 30 - 30 Gate-Source Voltage VGS ± 20 ± 20 TA = 25 °C Continuous Drain Current Pulsed Drain Current Continuous Source Current (MOSFET Diode Conduction) TA = 25 °C Power Dissipation -3 - 2.2 - 2.5 IDM - 12 - 12 IS - 0.91 - 1.25 1.1 1.25 0.7 0.8 TJ and Tstg - 55 to 150 - 55 to 150 °C RthJA 115 100 °C/W PD TA = 70 °C Operating Junction and Storage Temperature Range Maximum Junction-to-Ambient V - 2.7 ID TA = 70 °C UNIT A W SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL Si2307CDS MIN. TYP. Si2307DS MAX. MIN. -3 -1 TYP. MAX. UNIT Static Gate-Threshold Voltage VGS(th) Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current Drain-Source On-Resistance VGS = - 10 V VGS = - 10 V VGS = - 4.5 V ID(on) RDS(on) -1 V ± 100 -1 -6 ± 100 nA -1 µA -6 A 0.073 0.088 0.064 0.08 0.110 0.138 0.103 0.14 - 1.2 NS Forward Transconductance gfs 7 Diode Forward Voltage VSD - 0.8 Input Capacitance Ciss 340 565 Output Capacitance Coss 67 126 Reverse Transfer Capacitance Crss 51 75 Gate Charge Qg 4.1 Gate-Source Charge Qgs 1.3 1.9 Gate-Drain Charge Qgd 1.8 2 Gate Resistance Rg 10 NS 4.5 Ω S - 1.2 V Dynamic 6.2 pF 5 nC Ω Notes NS denotes not specified in datasheet Specification comparisons are supplied as a courtesy to compare two devices and do not constitute a commercial product datasheet or any guarantee of identical performance. Designers should refer to the appropriate datasheets of the same number for guaranteed specification limits. Document Number: 68949 Revision: 04-Sep-08 www.vishay.com 1