HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3 Data Sheet January 2000 7A, 600V, UFS Series N-Channel IGBTs Features The HGTD3N60B3S, HGT1S3N60B3S and HGTP3N60B3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. • 7A, 600V, TC = 25oC The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. File Number 4368.1 • 600V Switching SOA Capability • Typical Fall Time. . . . . . . . . . . . . . . . 115ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss Packaging JEDEC TO-220AB E C G COLLECTOR (FLANGE) Formerly Developmental Type TA49192. Ordering Information PART NUMBER PACKAGE BRAND HGTD3N60B3S TO-252AA G3N60B HGT1S3N60B3S TO-263AB G3N60B3 HGTP3N60B3 TO-220AB G3N60B3 JEDEC TO-263AB COLLECTOR (FLANGE) NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-252AA and TO-263AB variant in tape and reel, e.g. HGTD3N60B3S9A. G E Symbol JEDEC TO-252AA C COLLECTOR (FLANGE) G G E E INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000 HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGTD3N60B3S, HGT1S3N60B3S HGTP3N60B3 UNITS Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES 600 V Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 7.0 3.5 20 ±20 ±30 18A at 600V 33.3 0.27 100 -55 to 150 260 5 10 A A A V V W W/oC mJ oC oC µs µs CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Pulse width limited by maximum junction temperature. 2. VCE(PK) = 360V, TJ = 125oC, RG = 82Ω. TC = 25oC, Unless Otherwise Specified Electrical Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Collector to Emitter Breakdown Voltage BVCES IC = 250µA, VGE = 0V 600 - - V Emitter to Collector Breakdown Voltage BVECS IC = 10mA, VGE = 0V 20 28 - V - - 250 µA - - 2.0 mA - 1.8 2.1 V - 2.1 2.5 V 4.5 5.4 6.0 V - - ±250 nA 18 - - A IC = IC110, VCE = 0.5 BVCES - 7.9 - V IC = IC110, VCE = 0.5 BVCES VGE = 15V - 18 22 nC VGE = 20V - 21 25 nC - 18 - ns - 16 - ns - 105 - ns - 70 - ns - 66 75 µJ - 88 160 µJ Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA ICES VCE(SAT) VGE(TH) VCE = BVCES IC = IC110, VGE = 15V TC = 25oC TC = 150oC TC = 25oC TC = 150oC IC = 250µA, VCE = VGE IGES VGE = ±20V SSOA TJ = 150oC RG = 82Ω VGE = 15V VCE = 600V L = 500µH Gate to Emitter Plateau Voltage VGEP On-State Gate Charge Qg(ON) Current Turn-On Delay Time td(ON)I Current Rise Time trI Current Turn-Off Delay Time td(OFF)I Current Fall Time tfI Turn-On Energy EON Turn-Off Energy (Note 3) EOFF 2 IGBT and Diode at TJ = 25oC ICE = IC110 VCE = 0.8 BVCES VGE = 15V RG = 82Ω L = 1mH Test Circuit (Figure 17) HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3 TC = 25oC, Unless Otherwise Specified (Continued) Electrical Specifications PARAMETER SYMBOL Current Turn-On Delay Time trI Current Turn-Off Delay Time MIN TYP MAX UNITS - 16 - ns - 18 - ns - 220 295 ns - 115 175 ns - 130 140 µJ IGBT and Diode at TJ = 150oC ICE = IC110 VCE = 0.8 BVCES VGE = 15V RG = 82Ω L = 1mH Test Circuit (Figure 17) td(ON)I Current Rise Time TEST CONDITIONS td(OFF)I Current Fall Time tfI Turn-On Energy EON Turn-Off Energy (Note 3) EOFF - 210 325 µJ Thermal Resistance Junction To Case RθJC - - 3.75 oC/W NOTE: 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include losses due to diode recovery. Unless Otherwise Specified ICE, COLLECTOR TO EMITTER CURRENT (A) ICE , DC COLLECTOR CURRENT (A) 7 VGE = 15V 6 5 4 3 2 1 0 25 50 75 100 125 150 20 TJ = 150oC, RG = 82Ω, VGE = 15V, L = 500µH 18 16 14 12 10 8 6 4 2 0 0 TC , CASE TEMPERATURE (oC) VGE 15V 10V 15V 10V fMAX1 = 0.05/(td(OFF)I + td(ON)I) fMAX2 = (PD - PC)/(EON + EOFF) PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RØJC = 3.75oC/W, SEE NOTES 1 2 3 4 5 6 7 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT 3 8 tSC , SHORT CIRCUIT WITHSTAND TIME (µs) fMAX, OPERATING FREQUENCY (kHz) TC 75oC 75oC 110oC 110oC 10 1 300 400 500 700 600 FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA TJ = 150oC, RG = 82Ω, L = 1mH, V CE = 480V 100 200 VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE 200 100 16 45 VCE = 360V, RG = 82Ω, TJ = 125oC 14 40 ISC 12 35 10 30 8 25 tSC 6 20 4 10 11 12 13 14 15 15 VGE , GATE TO EMITTER VOLTAGE (V) FIGURE 4. SHORT CIRCUIT WITHSTAND TIME ISC , PEAK SHORT CIRCUIT CURRENT (A) Typical Performance Curves HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3 14 Unless Otherwise Specified (Continued) TC = -55oC DUTY CYCLE <0.5%, VGE = 10V PULSE DURATION = 250µs 12 10 TC = 150oC 8 6 TC = 25oC 4 2 0 0 1 2 3 4 5 6 7 8 9 10 ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves 30 DUTY CYCLE <0.5%, VGE = 15V PULSE DURATION = 250µs 20 TC = 150oC 15 10 TC = 25oC 5 0 0 VCE , COLLECTOR TO EMITTER VOLTAGE (V) 2 3 4 5 6 7 8 9 10 FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE 0.7 0.6 RG = 82Ω, L = 1mH, VCE = 480V 0.6 EOFF, TURN-OFF ENERGY LOSS (mJ) EON , TURN-ON ENERGY LOSS (mJ) 1 VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE TJ = 25oC, TJ = 150oC, VGE = 10V 0.5 0.4 0.3 0.2 0.1 TJ = 25oC, TJ = 150oC, VGE = 15V 1 2 3 4 5 6 7 RG = 82Ω, L = 1mH, VCE = 480V 0.5 TJ = 150oC; VGE = 10V OR 15V 0.4 0.3 0.2 0.1 TJ = 25oC; VGE = 10V OR 15V 0 0 1 8 2 3 5 4 6 7 8 ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT 80 45 RG = 82Ω, L = 1mH, VCE = 480V RG = 82Ω, L = 1mH, VCE = 480V 40 70 TJ = 25oC, TJ = 150oC, VGE = 10V trI , RISE TIME (ns) tdI , TURN-ON DELAY TIME (ns) TC = -55oC 25 35 30 25 20 60 TJ = 25oC, TJ = 150oC, VGE = 10V 50 40 TJ = 25oC, TJ = 150oC, VGE = 15V 30 20 15 TJ = 25oC, TJ = 150oC, VGE = 15V 10 10 1 2 3 4 5 6 7 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT 4 8 1 2 3 4 5 6 7 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT 8 HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3 Typical Performance Curves Unless Otherwise Specified (Continued) 140 RG = 82Ω, L = 1mH, VCE = 480V 225 RG = 82Ω, L = 1mH, VCE = 480V TJ = 150oC, VGE = 15V 200 175 TJ = 150oC, VGE = 10V 150 125 120 tfI , FALL TIME (ns) td(OFF)I , TURN-OFF DELAY TIME (ns) 250 TJ = 25oC, VGE = 15V TJ = 150oC, VGE = 10V OR 15V 100 80 TJ = 25oC, VGE = 10V OR 15V 100 TJ = 25oC, VGE = 10V 75 60 1 3 2 5 4 7 6 8 1 2 ICE , COLLECTOR TO EMITTER CURRENT (A) 7 8 15 VGE , GATE TO EMITTER VOLTAGE (V) 25 TC = -55oC 20 15 6 5 FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER CURRENT TC = 25oC PULSE DURATION = 250µs TC = 150oC 10 5 Ig(REF) = 1mA, RL = 171Ω, TC = 25oC 12 9 6 VCE = 200V VCE = 400V VCE = 600V 3 0 0 5 6 7 8 9 10 11 12 13 14 15 0 5 10 VGE , GATE TO EMITTER VOLTAGE (V) FREQUENCY = 1MHz 400 CIES 300 200 COES 100 CRES 0 5 10 15 20 25 VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE 5 20 FIGURE 14. GATE CHARGE WAVEFORM 500 0 15 Qg , GATE CHARGE (nC) FIGURE 13. TRANSFER CHARACTERISTIC C, CAPACITANCE (pF) ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT 30 4 3 ICE , COLLECTOR TO EMITTER CURRENT (A) 25 HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3 ZθJC , NORMALIZED THERMAL RESPONSE Typical Performance Curves Unless Otherwise Specified (Continued) 100 0.5 0.2 10-1 0.1 0.05 t1 0.02 0.01 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZθJC X RθJC) + TC SINGLE PULSE 10-2 10-5 PD 10-4 10-3 10-2 t2 10-1 100 101 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 16. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE Test Circuit and Waveform L = 1mH 90% RHRD460 10% VGE EON EOFF RG = 82Ω VCE + - 90% VDD = 480V ICE 10% td(OFF)I tfI tfI td(ON)I FIGURE 17. INDUCTIVE SWITCHING TEST CIRCUIT 6 FIGURE 18. SWITCHING TEST WAVEFORMS HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3 Handling Precautions for IGBTs Operating Frequency Information Insulated Gate Bipolar Transistors are susceptible to gateinsulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2 ; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as “ECCOSORBD™ LD26” or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM . Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate opencircuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 18. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM. td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC . The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 3) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON and EOFF are defined in the switching waveforms shown in Figure 18. EON is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF ; i.e., the collector current equals zero (ICE = 0). All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site www.intersil.com 7 ECCOSORBD™ is a Trademark of Emerson and Cumming, Inc.