HGTG20N120C3D Data Sheet 45A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N120C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. October 1998 File Number 4508.1 Features • 45A, 1200V, TC = 25oC • 1200V Switching SOA Capability • Typical Fall Time. . . . . . . . . . . . . . . . 300ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss Symbol C G The diode used in anti-parallel with the IGBT was formerly developmental type TA49155. E The IGBT diode combination was formerly developmental type TA49264. Packaging Ordering Information JEDEC STYLE TO-247 PART NUMBER HGTG20N120C3D PACKAGE TO-247 BRAND 20N120C3D E C NOTE: When ordering, use the entire part number. G INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,567,641 4,587,713 4,598,461 4,605,948 4,618,872 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 HGTG20N120C3D Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IC110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching Safe Operating Area at TJ = 150oC, Figure 2 . . . . . . . . . . . . . . . . . . . . . SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Reverse Voltage Avalanche Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . .TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . tSC Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . tSC HGTG20N120C3D 1200 UNITS V 45 20 160 ±20 ±30 20A at 1200V 208 1.67 100 -40 to 150 260 8 15 A A A V V W W/oC mJ oC oC µs µs CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Pulse width limited by maximum junction temperature. 2. VCE(PK) = 720V, TJ = 125oC, RGE = 3Ω. TC = 25oC, Unless Otherwise Specified Electrical Specifications PARAMETER SYMBOL Collector to Emitter Breakdown Voltage Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage Gate to Emitter Threshold Voltage BVCES ICES VCE(SAT) VGE(TH) TEST CONDITIONS MIN TYP MAX UNITS 1200 - - V TC = 25oC - - 150 µA TC = 150oC - - 2.0 mA TC = 25oC - 2.4 3.0 V TC = 150oC - 2.2 2.9 V 5.0 7.0 7.5 V - - ±250 nA VCE (PK) = 960V 60 - - A VCE (PK) = 1200V 20 - - A IC = IC110, VCE = 0.5 BVCES - 9.4 - V IC = IC110, VCE = 0.5 BVCES VGE = 15V - 93 130 nC VGE = 20V - 186 230 nC IC = 250µA, VGE = 0V VCE = BVCES IC = IC110, VGE = 15V IC = 250µA, VCE = VGE Gate to Emitter Leakage Current IGES VGE = ±20V Switching SOA SSOA TJ = 150oC, RG = 3Ω, VGE = 15V L = 100µH, Gate to Emitter Plateau Voltage VGEP On-State Gate Charge QG(ON) Current Turn-On Delay Time td(ON)I Current Rise Time trI Current Turn-Off Delay Time td(OFF)I Current Fall Time tfI IGBT and Diode at TJ = 25oC ICE = IC110 VCE = 0.8 BVCES VGE = 15V RG = 3Ω - 39 - ns - 22 - ns - 110 - ns L = 1mH Test Circuit - (Figure 19) - 95 - ns Turn-On Energy (Note 4) EON1 - 950 - µJ Turn-On Energy (Note 4) EON2 - 2250 - µJ Turn-Off Energy (Note 3) EOFF - 1200 2400 µJ 2 HGTG20N120C3D TC = 25oC, Unless Otherwise Specified (Continued) Electrical Specifications PARAMETER SYMBOL Current Turn-On Delay Time td(ON)I Current Rise Time trI Current Turn-Off Delay Time td(OFF)I Current Fall Time tfI TEST CONDITIONS IGBT and Diode at TJ = 150oC ICE = IC110 VCE = 0.8 BVCES VGE = 15V RG = 3Ω L = 1mH Test Circuit - (Figure 19) MIN TYP MAX UNITS - 39 - ns - 20 - ns - 360 550 ns - 300 400 ns Turn-On Energy (Note 4) EON1 - 950 - µJ Turn-On Energy (Note 4) EON2 - 3365 - µJ Turn-Off Energy (Note 3) EOFF - 4400 8000 µJ Diode Forward Voltage VEC IEC = 20A - 2.6 3.4 V IEC = 1A, dIEC/dt = 200A/µs - - 50 ns IEC = 20A, dIEC/dt = 200A/µs - - 70 ns IGBT - - 0.6 oC/W Diode - - 1.25 oC/W Diode Reverse Recovery Time trr Thermal Resistance Junction To Case RθJC NOTES: 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. 4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 19. (Unless Otherwise Specified) ICE , DC COLLECTOR CURRENT (A) 45 VGE = 15V 40 35 30 25 20 15 10 5 0 25 50 75 100 125 TC , CASE TEMPERATURE (oC) FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE 3 150 ICE, COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves 70 TJ = 150oC, RG = 3Ω, VGE = 15V, L = 100µH 60 50 40 30 20 10 0 0 200 400 600 800 1000 1200 1400 VCE , COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA HGTG20N120C3D TJ = 150oC, RG = 3Ω, L = 1mH, V CE = 960V 10 TC VGE 75oC 75oC 110oC 110oC 15V 12V 15V 12V fMAX1 = 0.05 / (td(OFF)I + td(ON)I) fMAX2 = (PD - PC) / (EON2 + EOFF) PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RØJC = 0.6oC/W, SEE NOTES 1 10 5 20 60 35 350 25 300 20 250 15 200 10 150 tSC 5 11 12 ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) TC = 25oC 40 TC = -40oC 30 20 10 0 0 2 4 6 8 TC = -40oC DUTY CYCLE <0.5%, VGE = 15V PULSE DURATION = 250µs 175 150 TC = 150oC 125 100 TC = 25oC 75 50 25 0 10 0 2 4 6 8 10 12 14 VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE 12 20.0 RG = 3Ω, L = 1mH, VCE = 960V EOFF, TURN-OFF ENERGY LOSS (mJ) EON2 , TURN-ON ENERGY LOSS (mJ) 100 16 15 200 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 17.5 TJ = 25oC, TJ = 150oC, VGE = 12V 15.0 12.5 10.0 7.5 5.0 2.5 0 14 FIGURE 4. SHORT CIRCUIT WITHSTAND TIME 70 50 13 VGE , GATE TO EMITTER VOLTAGE (V) FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT TC = 150oC ISC 30 ICE, COLLECTOR TO EMITTER CURRENT (A) DUTY CYCLE <0.5%, VGE = 12V 60 PULSE DURATION = 250µs 400 VCE = 720V, RGE = 3Ω, TJ = 125oC ISC , PEAK SHORT CIRCUIT CURRENT (A) fMAX, OPERATING FREQUENCY (kHz) 60 (Unless Otherwise Specified) (Continued) tSC , SHORT CIRCUIT WITHSTAND TIME (µs) Typical Performance Curves TJ = 25oC, TJ = 150oC, VGE = 15V RG = 3Ω, L = 1mH, VCE = 960V 10 8 TJ = 150oC, VGE = 12V OR 15V 6 4 TJ = 25oC, VGE = 12V OR 15V 2 0 5 10 15 20 25 30 35 40 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT 4 45 5 10 35 40 15 20 25 30 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT 45 HGTG20N120C3D Typical Performance Curves (Unless Otherwise Specified) (Continued) 55 300 RG = 3Ω, L = 1mH, VCE = 960V 250 50 TJ = 25oC, TJ = 150oC, VGE = 12V 45 40 trI , RISE TIME (ns) tdI , TURN-ON DELAY TIME (ns) RG = 3Ω, L = 1mH, VCE = 960V 35 TJ = 25oC, TJ = 150oC, VGE = 12V 200 150 TJ = 25oC, TJ = 150oC, VGE = 15V 100 50 TJ = 25oC, TJ = 150oC, VGE = 15V 30 0 5 10 15 25 20 30 35 40 45 5 20 35 30 25 40 45 FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT 350 RG = 3Ω, L = 1mH, VCE = 960V RG = 3Ω, L = 1mH, VCE = 960V 400 300 350 tfI , FALL TIME (ns) td(OFF)I , TURN-OFF DELAY TIME (ns) FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT 300 TJ = 150oC, VGE = 12V, VGE = 15V 250 TJ = 25oC, VGE = 12V, VGE = 15V 200 TJ = 150oC, VGE = 12V AND 15V 250 200 150 150 100 TJ = 25oC, VGE = 12V AND 15V 100 50 50 5 10 15 20 25 30 35 40 ICE , COLLECTOR TO EMITTER CURRENT (A) 45 VGE , GATE TO EMITTER VOLTAGE (V) DUTY CYCLE <0.5%, VCE = 10V PULSE DURATION = 250µs 150 125 100 TC = 25oC 75 50 TC = 150oC 25 TC = -40oC 0 7 8 9 10 11 12 13 VGE , GATE TO EMITTER VOLTAGE (V) 14 10 15 20 25 35 30 40 15 IG (REF) = 1mA, RL = 30Ω, TC = 25oC 12 VCE = 1200V 9 VCE = 800V VCE = 400V 6 3 0 0 25 50 75 100 125 150 QG , GATE CHARGE (nC) FIGURE 13. TRANSFER CHARACTERISTIC 5 45 FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER CURRENT 15 175 5 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT ICE, COLLECTOR TO EMITTER CURRENT (A) 15 ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A) 450 10 FIGURE 14. GATE CHARGE WAVEFORMS 175 HGTG20N120C3D Typical Performance Curves (Unless Otherwise Specified) (Continued) C, CAPACITANCE (pF) 8000 FREQUENCY = 1MHz 7000 CIES 6000 5000 4000 3000 2000 COES 1000 CRES 0 0 5 10 15 20 25 VCE, COLLECTOR TO EMITTER VOLTAGE (V) ZθJC , NORMALIZED THERMAL RESPONSE FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE 100 0.50 0.20 0.10 10-1 0.05 0.02 t1 0.01 PD DUTY FACTOR, D = t1 / t2 10-2 SINGLE PULSE 10-5 t2 PEAK TJ = (PD X ZθJC X RθJC) + TC 10-4 10-3 10-2 10-1 100 101 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 16. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE 70 TC = 150oC 60 150oC t, RECOVERY TIMES (ns) IF, FORWARD CURRENT (A) 100 25oC 10 1 50 trr 40 ta 30 tb 20 10 0 1 2 3 4 VF, FORWARD VOLTAGE (V) FIGURE 17. DIODE FORWARD CURRENT vs FORWARD VOLTAGE DROP 6 5 1 2 5 10 20 IF , FORWARD CURRENT (A) FIGURE 18. RECOVERY TIMES vs FORWARD CURRENT HGTG20N120C3D Test Circuit and Waveforms HGTG20N120C3D 90% 10% VGE EON2 EOFF L = 1mH VCE RG = 3Ω 90% + - ICE VDD = 960V 10% td(OFF)I tfI trI td(ON)I FIGURE 19. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 20. SWITCHING TEST WAVEFORMS Handling Precautions for IGBTs Operating Frequency Information Insulated Gate Bipolar Transistors are susceptible to gateinsulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2 ; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as “ECCOSORBD™ LD26” or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate opencircuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. 7 fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 20. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM. td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 3) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON2 and EOFF are defined in the switching waveforms shown in Figure 20. EON2 is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0). ECCOSORBD‰ is a Trademark of Emerson and Cumming, Inc. HGTG20N120C3D TO-247 3 LEAD JEDEC STYLE TO-247 PLASTIC PACKAGE A E SYMBOL ØP Q ØR D L1 b1 c 2 1 3 3 J1 e MAX MILLIMETERS MIN MAX NOTES 0.180 0.190 4.58 4.82 - b 0.046 0.051 1.17 1.29 2, 3 b1 0.060 0.070 1.53 1.77 1, 2 b2 0.095 0.105 2.42 2.66 1, 2 c 0.020 0.026 0.51 0.66 1, 2, 3 D 0.800 0.820 20.32 20.82 - E 0.605 0.625 15.37 15.87 e1 b MIN A e b2 L INCHES TERM. 4 ØS 0.219 TYP 0.438 BSC - 5.56 TYP 4 11.12 BSC 4 J1 0.090 0.105 2.29 2.66 1 L 0.620 0.640 15.75 16.25 - BACK VIEW L1 0.145 0.155 3.69 3.93 1 ØP 0.138 0.144 3.51 3.65 - Q 0.210 0.220 5.34 5.58 - 2 e1 5 ØR 0.195 0.205 4.96 5.20 - ØS 0.260 0.270 6.61 6.85 - NOTES: 1. Lead dimension and finish uncontrolled in L1. 2. Lead dimension (without solder). 3. Add typically 0.002 inches (0.05mm) for solder coating. 4. Position of lead to be measured 0.250 inches (6.35mm) from bottom of dimension D. 5. Position of lead to be measured 0.100 inches (2.54mm) from bottom of dimension D. 6. Controlling dimension: Inch. 7. Revision 1 dated 1-93. 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