NTE49 (NPN) & NTE50 (PNP) Silicon Complementary Transistors General Purpose, High Voltage Amp, Driver Description: The NTE49 (NPN) and NTE50 (PNP) are silicon complementary transistors in a TO202 type case designed for general purpose, high voltage amplifier and driver applications. Features: D High Collector Breakdown Voltage: V(BR)CEO = 100V Min @ IC = 1mA D High Power Dissipation: PD = 10W @ TC = +25°C Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Total Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8mW/°C Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80mW/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.5°C/W Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125°C/W Note 1. NTE49 is a discontinued device and no longer available. Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector–Emitter Breakdown Voltage V(BR)CEO IC = 1mA, IB = 0 Emitter–Base Breakdown Voltage V(BR)EBO IE = 100µA, IC = 0 Collector Cutoff Current 100 – – V 4 – – V nA ICBO VCB = 40V, IE = 0 – – 100 hFE IC = 50mA, VCE = 1V 80 125 – IC = 250mA, VCE = 1V 60 100 – IC = 500mA, VCE = 1V – 55 – IC = 250mA, IB = 10mA – 0.18 0.4 V IC = 250mA, IB = 25mA – 0.1 – V VBE(on) IC = 250mA, VCE = 5V – 0.74 1.2 V fT IC = 250mA, VCE = 5V, f = 100MHz, Note 1 50 150 – MHz VCB = 10V, IE = 0, f = 100kHz – 6 12 pF ON Characteristics (Note 2) DC Current Gain Collector–Emitter Saturation Voltage VCE(sat) Base–Emitter ON Voltage Small–Signal Characteristics Current Gain–Bandwidth Product Output Capacitance Cob Note 2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. .380 (9.56) .180 (4.57) .132 (3.35) Dia C .500 (12.7) .325 (9.52) 1.200 (30.48) Ref .070 (1.78) x 45° Chamf .300 (7.62) .050 (1.27) .400 (10.16) Min E .100 (2.54) B C .100 (2.54)