NTE NTE261

NTE261 (NPN) & NTE262 (PNP)
Silicon Complementary Transistors
Darlington Power Amplifier
Description:
The NTE261 (NPN) and NTE262 (PNP) are complementary silicon Darlington power transistors in
a TO220 type package designed for general purpose amplifier and low–speed switching applications.
Features:
D High DC Current Gain: hFE = 2500 Typ @ IC = 4A
D Collector–Emitter Sustaining Voltage: VCEO(sus) = 100V Min @ 100mA
D Low Collector–Emitter Saturation Voltage:
VCE(sat) = 2V Max @ IC = 3A
= 4V Max @ IC = 5A
D Monolithic Construction with Built–In Base–Emitter Shunt Resistor
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120mA
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.52W/°C
Total Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.016W/°C
Unclamped Inductive Load Energy (Note 1), E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mJ
Operating Junction Temperature range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.92°C/W
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5°C/W
Note 1. IC = 1A, L = 100mH, P.R.F. = 10Hz, VCC = 20V, RBE = 100Ω.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
100
–
–
V
OFF Characteristics
Collector–Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
VCEO(sus) IC = 100mA, IB = 0, Note 2
ICEO
VCE = 50V, IB = 0
–
–
0.5
mA
ICBO
VCB = 100V, IE = 0
–
–
0.2
mA
IEBO
VBE = 5V, IC = 0
–
–
2.0
mA
hFE
IC = 0.5A, VCE = 3V
1000
–
–
IC = 3A, VCE = 3V
1000
–
–
IC = 3A, IB = 12mA
–
–
2.0
V
IC = 5A, IB = 20mA
–
–
4.0
V
IC = 3A, VCE = 3V
–
–
2.5
V
IC = 3A, VCE = 4V, f = 1MHz
4.0
–
–
VCB = 10V, IE = 0, f = 0.1MHz
–
–
300
pF
–
–
200
pF
ON Characteristics (Note 2)
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter ON Voltage
VCE(sat)
VBE(on)
Dynamic Characteristics
Small–Signal Current Gain
|hfe|
Output Capacitance
NTE261
Cob
NTE262
Note 2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
NTE261
.420 (10.67)
Max
C
B
.110 (2.79)
E
.147 (3.75)
Dia Max
.500
(12.7)
Min
.250 (6.35)
Max
NTE262
.500
(12.7)
Max
C
B
.070 (1.78) Max
Base
.100 (2.54)
E
Emitter
Collector/Tab