Datasheet

UNISONIC TECHNOLOGIES CO., LTD
2SC2881
NPN SILICON TRANSISTOR
VOLTAGE AMPLIFIER
APPLICATIONS POWER
AMPLIFIER APPLICATIONS

FEATURES
* High voltage: VCEO=120V
* High transition frequency: fT=120MHz (typ.)
* Complementary to 2SA1201

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
2SC2881G-x-AB3-R
2SC2881L-x-T92-B
2SC2881G-x-T92-B
2SC2881L-x-T92-K
2SC2881G-x-T92-K
Note: Pin Assignment: B: Base C: Collector E: Emitter

Package
SOT-89
TO-92
TO-92
Pin Assignment
1
2
3
B
C
E
B
C
E
B
C
E
Packing
Tape Reel
Tape Box
Bulk
MARKING
SOT-89
www.unisonic.com.tw
Copyright © 2016 Unisonic Technologies Co., Ltd
TO-92
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2SC2881

NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA= 25°C, unless otherwise specified)
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
RATINGS
UNIT
120
V
120
V
5
V
800
mA
160
mA
SOT-89
500
mW
Collector power dissipation
PC
TO-92
600
mW
Junction temperature
TJ
150
C
Storage temperature range
TSTG
-55 ~ 150
C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (TA= 25°C, unless otherwise specified)
PARAMETER
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance

SYMBOL
VCBO
VCEO
VEBO
IC
IB
SYMBOL
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(SAT)
VBE
fT
COB
TEST CONDITION
IC=10mA, IB=0
IE=1mA, Ic=0
VCB=120V, IE=0
VEB=5V, IC=0
VCE=5V, IC=100mA
IC=500mA, IB=50mA
VCE=5V, IC=500mA
VCE=5V, IC=100mA
VCB=10V, f=1MHz, IE=0
MIN TYP MAX UNIT
120
V
5
V
0.1 μA
0.1 μA
80
240
1.0
V
1.0
V
120
MHz
30
pF
CLASSIFICATION OF hFE
RANK
RANGE
O
80 - 160
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Y
120 - 240
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
NPN SILICON TRANSISTOR
TYPICAL PERFORMANCE CHARACTERISTICS
Collector Current vs.Collector Emitter Voltage
800
50 20
Common
emitter
TA=25°C
10
600
5
Collector Current vs.Collector Current
1000
Common emitter
VCE=5V
500
RL=8¦¸
Ta=100°C
300
25
3
400
100
200
30
IR
B=1mA
L=8¦¸
0
0
8
4
0
12
Collector Emitter Voltage, VCE (V)
16
Collector Emitter Saturation Voltage vs.Collector Current
1
-25
50
2
Common emitter
Ic/IB=10
0.5
10
30
10
3
100
300
1000
Collector Current ,Ic (mA)
Collector Current vs.Base Emitter Voltage
1.0 Common
emitter
VCE=5V
0.8
0.3
0.6
RL=8¦¸
TA=100°C
25
0.4
0.1
-25
RL=8¦¸
TA=100°C
25
0.2
0.05
0.03
10
3
-25
30
100
300
Collector Current, Ic (mA)
1000
Collector Current vs.Collector Emitter Voltage
3000
1000 Ic max (continuous)
1ms*
10ms*
0.6
0.8
1.0
1.2
Collector Power Dissipation vs.Ambient Temperature
0.8
100ms*
0.6 No heat sink
DC operation
TA=25°C
50
30
0.4
0.2
*:Single nonrepetitive pulse
5 Ta=25¢J
3
0.4
0.2
Base Emitter Voltage ,VBE (V)
1.0
100
10
0
1.2
Ic max (pulse)*
500
300
0
0
Curves must be derated
linearly with increase in
temperature
Tested without a substrate
1
0.3
1
3
10
0
20
40
60
80
100 120 140 160
Ambient Temperature, TA (°C)
30
100
300
Collector Emitter Voltage, VCE (V)
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NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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