NTE2386 MOSFET N−Channel Enhancemen Mode, High Speed Switch TO3 Type Package Description: The NTE2386 Power MOSFET features advantages such as voltage control, very fast switching, ease of paralleling and temperature stability, and is suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, and high energy pulse circuits. Features: Repetitive Avalanche Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling D Case G S Absolute Maximum Ratings: Continuous Drain Current, ID (TC = +25C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.2A (TC = +100C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.8A Pulsed Drain Current (Note 1), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A Maximum Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W (Derate linearly above +25C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W/C Gate−to−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Single Pulse Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 670mJ Avalanche Current (Repetitive or Non−Repetitive, Note 1), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . 6.2A Repetitive Avalanche Energy (Note 1), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13mJ Peak Diode Recovery (Note 3), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0V/mS Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55to +150C Lead Temperature (During Soldering, 0.063 in. (1.6mm) from case for 10s), TL . . . . . . . . . . +300C Rev. 12−13 Electrical Characteristics: (TJ = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 600 − − V Breakdown Voltage Drain−to−Source BVDSS VGS = 0V, ID = 250A Static Drain−to−Source On−State Resistance RDS(on) VGS = 10V, ID = 3.4A, Note 4 − 0.97 1.2 On−State Drain Current ID(on) VDS > ID(on) x RDS(on) Max, VGS = 10V, Note 4 6.2 − − A Gate Threshold Voltage VGS(HL) VDS = VGS, ID = 250A 2.0 − 4.0 V VDS = 60V, IDC = 3.4A, Note 4 4.7 70 − mhos VDS = Max. Rating VCS = 0V − − 250 A VDS = 0.8 x Max Rating , VSS = 0V, TJ = 125C − − 1000 Forward Transconductance Zero Gate Voltage Drain Current gs IDSS Forward Leakage Current Gate−to−Source IGSS VGS = 20V − − 100 nA Reverse Leakage Current Gate−to−Source IGSS VGS = −20V − − −100 nA − 4.0 80 nC − 6.5 8.2 nC − 20 30 nC − 1.3 20 ns − 18 27 − 65 83 − 20 20 Total Gate Charge Qg Gate−to−Source Charge Qgs Gate−to−Drain (“Miller”) Charge Qgd Turn−On Delay Time td(on) Rise Time tr Turn−Off Delay Time Fall Time td(off) VGS = 10V, ID = 6.2A, VDS = 0.8 x Max Rating (independent of operating temperature) VDD = 300V, fD = 6.2A, RG = 9.1 RD = 47 (independent at operating temperature) tf Internal Drain Inductance LD Measured from the drain lead, 6mm (0.25 In) from packaged to center of die. − 5.0 − Internal Source Inductance LS Measured from the source lead, 6mm (0.25 in) from package to source bonding pad. − 18 − VGS = 0V, VDS = 25V, f = 1.0MHz − 1300 − nH Input Capacitance Ciss Output Capacitance Coss − 150 − Reverse Transfer Capacitance Crss − 30 − Min Typ Max Unit − − 6.2 A pF Source−Drain Diode Ratings and Characteristics: Parameter Continuous Source Current (Body Diode) Symbol Test Conditions IS Pulsed Source Current (Body Diode) ISM Note 1 − − 26 A Diode Forward Voltage VSO TJ = 25C, IS = 6.2A, VGS = 0V, Note 4 − − 1.5 V Reverse Recovery Time trr TJ = 25C, IF = 6.2A di/dt = 100A/s 1.8 3.6 7.9 C Forward Turn−On Time ton Intrinsic turn−on time is negligible Turn on speed is substantially controlled by LS + LD Thermal Resistance: Parameter Symbol Test Conditions Min Typ Max Unit − − 1.0 C/W Junction−to−Case RthJC Case−to−Sink RthCS Mounting surface flat, smooth, and greased − 0.12 − C/W Junction−to−Ambient RthJA Typical socket mount − − 30 C/W Note Note Note Note 1. 2. 3. 4. Repetitive Rating: Pulse Width limited by maximum junction temperature. VDD = 60V, Starting TJ = 25C, L = 27mH, RG = 25, Peak IC = 6.2A ISD 6.2A, di/dt = 80A/s VDD 3VDSS, TJ 150C, Suggested RG = 9.1 Pulse width 300s: Duty Cycle 2%. .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min Source .040 (1.02) 1.187 (30.16) .665 (16.9) .215 (5.45) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max Gate .525 (13.35) R Max Drain/Case