Data Sheet Shottky barrier diode RB705D Dimensions (Unit : mm) Applications Low current rectification Land size figure (Unit : mm) Features 1) Small mold type. (SMD3) 2) Low IR 3) High reliability. 2.4 2.9±0.2 各リードとも ＋0.1 Each lead has same dimension 同寸法 0.4 －0.05 1.0MIN. 0.8MIN. 0.95 ＋0.1 0.15 －0.06 ＋0.2 1.6－0.1 2.8±0.2 (3) 1.9 (2) Construction Silicon epitaxial planar (1) 0.95 0.8±0.1 0.95 0.3～0.6 0～0.1 0.2 1.1±0.2 1.1 0.1 0.01 1.9±0.2 SMD3 Structure ROHM : SMD3 JEDEC :S0T-346 JEITA : SC-59 week code Taping specifications(Unit : mm) φ1.5±0.1 0 2.0±0.05 0.3±0.1 3.2±0.1 5.5±0.2 3.5±0.05 Limits 40 40 30 200 125 40 to 125 Symbol VRM VR Io IFSM Tj Tstg 0～0.5 3.2±0.1 Absolute maximum ratings(Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward voltage (*1) Forward current surge peak (60Hz・1cyc) (*1) Junction temperature Storage temperature φ1.05MIN 4.0±0.1 3.2±0.1 8.0±0.2 1.75±0.1 4.0±0.1 1.35±0.1 Unit V V mA mA °C °C (*1) Rating of per diode : lo/2 Electrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Capacitance between terminals www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Symbol VF1 IR1 Min. - Typ. - Max. 0.37 1 Unit V μA Ct1 - 2.0 - pF 1/3 Conditions IF=1mA VR=10V VR=1V , f=1MHz 2011.03 - Rev.B Data Sheet RB705D 10 Ta=75℃ 1 Ta=-25℃ Ta=25℃ 0.1 Ta=125℃ 100 Ta=75℃ 10 1 Ta=25℃ 0.1 Ta=-25℃ 0.01 0.001 0.01 0 0 100 200 300 400 500 600 700 800 900 1000 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 20 0.1 30 0 280 270 260 0.8 0.7 0.6 0.5 0.4 0.3 AVE:0.083nA 0.2 6 5 4 AVE:2.00pF 3 2 Ct DISPERSION MAP IR DISPERSION MAP 20 8.3ms 10 AVE:7.30A 10 PEAK SURGE FORWARD CURRENT:IFSM(A) 1cyc Ifsm 15 PEAK SURGE FORWARD CURRENT:IFSM(A) 20 Ifsm 15 8.3ms 8.3ms 1cyc 10 5 9 Ifsm 8 t 7 6 5 4 3 2 1 0 0 0 1 IFSM DISPERSION MAP 10 1 100 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 0.003 0.04 1000 Rth(j-a) Rth(j-c) Mounted on epoxy board 10 IM=1mA 1ms IF=10mA D=1/2 0.03 REVERSE POWER DISSIPATION:PR (W) 100 FORWARD POWER DISSIPATION:Pf(W) TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 7 0 VF DIPERSION MAP 5 Ta=25℃ f=1MHz VR=1V n=10pcs 8 1 0 250 30 9 0.1 AVE:267.4mV 20 10 Ta=25℃ VR=10V n=30pcs 0.9 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 290 10 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 1 Ta=25℃ IF=1mA n=30pcs REVERSE CURRENT:IR(nA) FORWARD VOLTAGE:VF(mV) 10 1 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 300 PEAK SURGE FORWARD CURRENT:IFSM(A) f=1MHz CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=125℃ REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(mA) 10 1000 100 Sin(θ＝180) 0.02 DC 0.01 0.002 DC 0.001 D=1/2 Sin(θ＝180) time 300us 1 0.001 0.00 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS 1000 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 0 0.00 0.01 0.02 0.03 0.04 AVERAGE RECTIFIED FORWARD CURRENT Io(A) Io-Pf CHARACTERISTICS 2/3 0.05 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 2011.03 - Rev.B Data Sheet RB705D 0.1 0.1 0A 0V 0.08 0.06 t T DC 0.04 Per chip Io VR D=t/T VR=20V Tj=125℃ D=1/2 0.02 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Per chip 0.08 0.06 0A 0V D=1/2 0.02 Sin(θ＝180) t T DC 0.04 Io VR D=t/T VR=20V Tj=125℃ Sin(θ＝180) 0 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 0 0 25 50 75 100 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 3/3 125 2011.03 - Rev.B Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A