SANGDEST MICROELECTRONICS MBR330FL Technical Data Data Sheet N1555, Rev. - MBR330FL Schottky Barrier Rectifiers Features • • • • • • • • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Low power loss, high efficiency For use in low voltage high frequency inverters, free wheeling, and polarity protection applications Guardring for over voltage protection High temperature soldering guaranteed: 260°C/10 seconds at terminals These Devices are Pb−Free and are RoHS Compliant All SMC parts are traceable to the wafer lot Additional testing can be offered upon request Mechanical Data • • • • • • Case: SOD123-FL/MINI SMA molded plastic over sky die Terminals: Tin Plated, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight: 0.0155 g Haloggen free (green epoxy compound) Handling precautin: None Mechanical Dimensions (In mm/Inches) SOD-123-FL • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http:// www.smc-diodes.com • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS MBR330FL Technical Data Data Sheet N1555, Rev. - Marking Diagram: Where XYY is Date Code 33 X YY = Part Name = Yearly code = Weekly code Cautions：Molding resin Epoxy resin UL: 94V-0 Ordering Information: Device MBR330FL Package Shipping SOD-123-FL 3000pcs / reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification. • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http:// www.smc-diodes.com • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS MBR330FL Technical Data Data Sheet N1555, Rev. - Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified Characteristic Symbol Value Unit Peak Repetitive Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage VRRM VRWM VR 30 V Maximum Average Rectified Forward Current at TA = 75°C IF(AV) 3 A Forward Voltage @IF = 3A,TA = 25°C VFM 0.50 V @TA = 25°C @TA = 100°C IRM 0.5 20 mA IFSM 80 A 160 110 40 -55 to +150 pF °C/W Operating Junction Temperature Range Cj RΘJA RΘJC TJ Storage Temperature Range TSTG -65 to +175 °C Peak Reverse Current At Rated DC Blocking Voltage Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Maximum Junction Capacitance (Note 1) Typical thermal resistance (Note 2) Case Style °C SOD-123-FL Note1. Measured at 1MHz and applied reverse voltage of 4.0V D.C. 2. 8.0mm²(.013mm thick) land areas • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http:// www.smc-diodes.com • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS MBR330FL Technical Data Data Sheet N1555, Rev. - • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http:// www.smc-diodes.com • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS MBR330FL Technical Data Data Sheet N1555, Rev. DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.. • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http:// www.smc-diodes.com • E-Mail Address - sales@ sangdest.com.cn •