2521

NTE2521
Silicon NPN Transistor
Video Output for HDTV
TO−126 Type Package
Features:
D High Gain Bandwidth Product: fT = 400MHz Typ
D High Breakdown Voltage: VCEO  250V Min
D High Current
D Low Reverse Transfer Capacitance and Excellent High Frequency Response
Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Collector to Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250V
Collector to Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250V
Emitter to Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mA
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA
Collector Dissipation, PC
TA = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3W
TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
ICBO
VCB = 150V, IE = 0
−
−
0.1
A
Emitter Cutoff Current
IEBO
VEB = 2V, IC = 0
−
−
0.1
A
DC Current Gain
hFE
VCE = 10V, IC = 50mA
60
−
120
VCE = 10V, IC = 250mA
20
−
−
VCE = 30V, IC = 100mA
−
400
−
MHz
Gain Bandwidth Product
fT
Output Capacitance
Cob
VCB = 30V, f = 1MHz
−
4.2
−
pF
Reverse Transfer Capacitance
Cre
VCB = 30V, f = 1MHz
−
3.4
−
pF
Rev. 7−15
Electrical Characteristics (Cont’d): (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector−Emitter Saturation Voltage
VCE(sat)
IC = 50mA, IB = 5mA
−
−
1.0
V
Base−Emitter Saturation Voltage
VBE(sat)
IC = 50mA, IB = 5mA
−
−
1.0
V
Collector−Base Breakdown Voltage
V(BR)CBO IC = 10A, IE = 0
250
−
−
V
Collector−Emitter Breakdown Voltage
V(BR)CEO IC = 1mA, RBE = 
250
−
−
V
Emitter−Base Breakdown Voltage
V(BR)EBO IE = 100A, IC = 0
3
−
−
V
.315 (8.0)
.130
(3.3)
.118 (3.0)
Dia
.433
(11.0)
.295
(7.5)
E
C
B
.610
(15.5)
.094 (2.4)